FCPF165N65S3R0L

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW FCPF165N65S3R0L Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 165 mW @ 10 V 19 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 140 mW Ultra Low Gate Charge (Typ. Qg = 35 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 345 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S N-CHANNEL MOSFET Applications • • • • G Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter G D S TO−220F−3LD CASE 340BF MARKING DIAGRAM $Y&Z&3&K FCPF165 N65S3R0 $Y &Z &3 &K FCPF165N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 December, 2020 − Rev. 7 1 Publication Order Number: FCPF165N65S3R0L/D FCPF165N65S3R0L ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current: Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 V − Continuous (TC = 25°C) 19 A − Continuous (TC = 100°C) 12.3 − Pulsed (Note 1) IDM Drain Current: 47.5 A EAS Single Pulsed Avalanche Energy (Note 2) 87 mJ IAS Avalanche Current (Note 2) 2.7 A EAR Repetitive Avalanche Energy (Note 1) 0.35 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 35 W 0.28 W/°C −55 to + 150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2.7 A, RG = 25 W, starting TJ = 25 °C. 3. ISD ≤ 9.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF165N65S3R0L FCPF165N65S3R0 TO−220F Tube N/A N/A 50 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case, Max. 3.56 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 www.onsemi.com 2 FCPF165N65S3R0L ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 150°C 700 V DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V 0.64 VDS = 520 V, TC = 125 °C IGSS Gate to Source Leakage Current V/°C 1 mA ±100 nA 4.5 V 165 mW 1.39 VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.41 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 9.5 A 140 Forward Transconductance VDS = 20 V, ID = 9.5 A 12 S VDS = 400 V, VGS = 0 V, f = 1 MHz 1415 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance 35 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 345 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 48 pF Total Gate Charge at 10 V VDS = 400 V, ID = 9.5 A, VGS = 10 V (Note 4) 35 nC 8.3 nC 15 nC F = 1 MHz 0.5 W VDD = 400 V, ID = 9.5 A, VGS = 10 V, Rg = 4.7 W (Note 4) 17 ns 16 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time 43 ns Turn−Off Fall Time 5 ns tf SOURCE−DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current 19 A IS Maximum Pulsed Source to Drain Diode Forward Current 47.5 A Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 9.5 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 9.5 A, di/dt = 100 A/ms VSD 323 ns 5.2 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCPF165N65S3R0L TYPICAL CHARACTERISTICS 50 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 10 *Notes: 1. VDS = 20V 2. 250ms Pulse Test ID, Drain Current[A] ID, Drain Current[A] 50 10 o 150 C o 25 C o −55 C *Notes: 1. 250ms Pulse Test o 1 2. T C = 25 C 0.2 1 VDS, Drain−Source Voltage[V] 10 1 20 3 Figure 1. On−Region Characteristics IS, Reverse Drain Current [A] VGS = 10V VGS = 20V 0 10 20 30 40 o 0.1 o −55 C 0.01 0.0 10 VGS, Gate−Source Voltage [V] Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10000 Capacitances [pF] o 25 C 100000 0.1 9 150 C 1 1E−3 50 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1 8 2. 250ms Pulse Test 10 ID, Drain Current [A] 10 7 *Notes: 1. VGS = 0V 0.4 0.0 6 100 o 0.2 5 VGS, Gate−Source Voltage[V] Figure 2. Transfer Characteristics *Note: TC = 25 C RDS(ON) , Drain−Source On−Resistance [W] 0.6 4 8 Figure 5. Capacitance Characteristics VDS = 130V VDS = 400V 6 4 2 0 1000 *Note: ID = 9.5A 0 5 10 15 20 25 30 Qg, Total Gate Charge [nC] 35 40 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCPF165N65S3R0L TYPICAL CHARACTERISTICS 3.0 *Notes: 1. VGS = 0V 2. ID = 1mA 1.1 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 TJ, Junction Temperature [ oC] Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A] ID, Drain Current [A] 1ms 10ms Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 1.0 0.5 −50 0 50 100 o TJ, Junction Temperature [ C] 150 20 100ms 1 1.5 Figure 8. On−Resistance Variation vs. Temperature 10 ms 10 2.0 0.0 150 100 2.5 *Notes: 1. VGS = 10V 2. ID = 9.5A o 15 10 5 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 0 1000 VDS, Drain−Source Voltage [V] Figure 9. Maximum Safe Operating Area EOSS [ mJ] 6 4 2 0 130 260 390 520 50 75 100 o TC, Case Temperature [ C] 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 8 0 25 650 VDS, Drain to Source Voltage [V] Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 FCPF165N65S3R0L r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 0.001 −5 10 Z qJC(t) = r(t) x RqJC RqJC = 3.56 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 10 −2 −1 10 10 0 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 10 2 10 FCPF165N65S3R0L VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCPF165N65S3R0L + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK 3LD CASE 340BF ISSUE O DATE 31 AUG 2016 10.30 9.80 A 2.90 2.50 3.40 3.00 3.00 2.60 B 19.00 17.70 6.60 6.20 1 X 45° B 15.70 15.00 3.30 B 2.70 3 1 2.14 10.70 10.30 NOTES: 2.74 (2X) 2.34 4.60 4.30 DESCRIPTION: B 0.60 0.40 0.90 (3X) 0.50 0.50 M A 1.20 1.00 DOCUMENT NUMBER: 2.70 2.30 1.20(2X) 0.90 98AON13839G TO−220 FULLPAK 3LD A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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