FCPF400N80ZL1

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCPF400N80ZL1 N-Channel SuperFET® II MOSFET 800 V, 11 A, 400 mΩ Features Description • Typ. RDS(on) = 340 mΩ SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. • Ultra Low Gate Charge (Typ. Qg = 43 nC) • Low Eoss (Typ. 4.1 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC-DC Power Supply • LED Lighting D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 2.2 A EAR Repetitive Avalanche Energy (Note 1) 0.36 mJ dv/dt Parameter - DC ±20 - AC (f >1 Hz) - Continuous (TC = 25oC) - Pulsed ±30 11* - Continuous (TC = 100oC) 6.9* (TC = 25oC) TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Derate Above 25oC A 33* A 339 mJ (Note 3) Power Dissipation V (Note 1) 100 Peak Diode Recovery dv/dt Unit V (Note 2) MOSFET dv/dt PD TL FCPF400N80ZL1 800 20 V/ns 35.7 W 0.29 W/oC -55 to +150 oC 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCPF400N80ZL1 RθJC Thermal Resistance, Junction to Case, Max. 3.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 1 Unit oC/W www.fairchildsemi.com FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET November 2014 Part Number FCPF400N80ZL1 Top Mark FCPF400N80ZL1 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 800 - - V - 0.8 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 1 mA, TJ = 25°C o ID = 1 mA, Referenced to 25 C VDS = 800 V, VGS = 0 V - - 25 VDS = 640 V, TC = 125oC - - 250 VGS = ±20 V, VDS = 0 V - - ±10 VGS = VDS, ID = 1.1 mA 2.5 - 4.5 VGS = VDS, ID = 0.68 mA 2.5 - 4.5 VGS = 10 V, ID = 5.5 A - 0.34 0.4 VGS = 10 V, ID = 7.1 A - 0.35 0.4 - 0.89 - - 12 - μA μA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 7.1 A, TC = 150oC VDS = 20 V, ID = 5.5 A V Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance - 1770 2350 pF - 51 70 pF - 0.5 - pF - 28 - pF VDS = 0 V to 480 V, VGS = 0 V - 138 - pF VDS = 640 V, ID = 11 A, VGS = 10 V - 43 56 nC - 8.6 - nC VDS = 100 V, VGS = 0 V, f = 1 MHz (Note 4) - 17 - nC f = 1 MHz - 2.3 - Ω - 20 50 ns VDD = 400 V, ID = 11 A, VGS = 10 V, Rg = 4.7 Ω - 12 34 ns - 51 112 ns - 2.6 15 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 11 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 33 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 11 A - - 1.2 V trr Reverse Recovery Time 395 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 11 A, dIF/dt = 100 A/μs - 7.4 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 11 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 2 www.fairchildsemi.com FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain Current[A] ID, Drain Current[A] 50 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 o 150 C o 25 C *Notes: 1. 250μs Pulse Test o -55 C o 2. TC = 25 C 2 1 10 VDS, Drain to Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage *Notes: 1. VGS = 0V 0.6 0.5 VGS = 10V VGS = 20V 0.3 0.2 0 6 12 18 24 ID, Drain Current [A] 30 o 25 C 1 VGS, Gate to Source Voltage [V] 10 Ciss 1000 Capacitances [pF] o 150 C 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 Crss 1 10 100 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10000 1 2. 250μs Pulse Test 10 0.1 0.2 35 Figure 5. Capacitance Characteristics 10 7 50 o *Note: TC = 25 C 0.4 4 5 6 VGS, Gate toSource Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain to Source On-Resistance 0.7 3 3 VDS = 160V 8 VDS = 400V VDS = 640V 6 4 2 0 1000 *Note: ID = 11A 0 15 30 Qg, Total Gate Charge [nC] 45 www.fairchildsemi.com FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 1mA RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 *Notes: 1. VGS = 10V 2. ID = 5.5A 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 12 100 10μs ID, Drain Current [A] ID, Drain Current [A] 10 100μs 10 1ms 10ms 1 Operation in This Area is Limited by RDS(on) DC *Notes: 0.1 o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain to Source Voltage [V] 6 4 2 o 0.01 0.1 8 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 12 EOSS, [μJ] 10 8 6 4 2 0 0 200 400 600 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 800 4 www.fairchildsemi.com FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) ZθJC(t), Thermal Response [oC/W] Figure 12. Transient Thermal Response Curve 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 *Notes: 0.01 o 0.01 1. ZθJC(t) = 3.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 -4 10 -3 -2 -1 0 10 10 10 10 t1, Rectangular Pulse Duration [sec] 5 1 10 2 10 www.fairchildsemi.com FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 6 www.fairchildsemi.com FCPF400N80ZL1 — N-Channel SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCPF400N80ZL1 Rev. C1 7 www.fairchildsemi.com 10.30 9.80 A 2.90 2.50 3.40 3.00 6.60 6.20 3.00 2.60 B 1 X 45° 19.00 17.70 B 15.70 15.00 3.30 2.70 B 1 2.14 10.70 10.30 1.20 1.00 3 2.70 2.30 1.20 0.90 (2X) 0.90 (3X) 0.50 0.50 M 2.74 (2X) 2.34 B 0.60 0.40 A NOTES: 4.60 4.30 A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. F. DRAWING FILE NAME: TO220V03REV1 G. FAIRCHILD SEMICONDUCTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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