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FDB8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features
General Description
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A
Fast Switching
RoHS Compliant
Application
Inverter
Power Supplies
D
D
G
G
S
TO-263AB
S
FDB Series
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC= 25°C
V
-Continuous (Silicon limited)
TC= 25°C
(Note 1)
66
TA= 25°C
(Note 1a)
15
A
100
(Note 3)
Power Dissipation
TC= 25°C
Power Dissipation
TJ, TSTG
±20
50
-Pulsed
PD
Units
V
-Continuous
Drain-Source Avalanche Energy
EAS
Ratings
40
153
60
(Note 1a)
Operating and Storage Junction Temperature Range
3.1
–55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
2.1
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB8447L
Device
FDB8447L
©2007 Fairchild Semiconductor Corporation
FDB8447L Rev.C
Package
TO-263AB
1
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTrench® MOSFET
February 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
40
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VGS = 0V
±100
nA
3
V
35
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-5
VGS = 10V, ID = 14A
7.4
8.5
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 11A
8.7
11.0
VGS = 10V, ID = 14A, TJ=125°C
10.8
12.4
gFS
Forward Transconductance
VDS = 5V, ID = 14A
1
1.9
mV/°C
58
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
1970
2620
pF
250
335
pF
150
225
pF
Ω
1.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
11
20
ns
6
12
td(off)
Turn-Off Delay Time
ns
28
45
tf
ns
Fall Time
4
10
ns
Qg(TOT)
Total Gate Charge, VGS = 10V
37
52
nC
Qg(TOT)
Total Gate Charge, VGS = 5V
20
28
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20V, ID = 14A
VGS = 10V, RGEN = 6Ω
VDD =20V, ID = 14A
VGS = 10V
6
nC
7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 14A
(Note 2)
IF = 14A, di/dt = 100A/µs
0.8
1.2
V
28
42
ns
24
36
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
FDB8447L Rev.C
2
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = 10V
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
VGS = 4V
60
VGS = 3.5V
40
20
0
VGS = 3V
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
100
4
VGS = 3V
2.5
VGS = 3.5V
2.0
1.5
1.0
0.5
40
60
80
100
25
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT(A)
ID = 14A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
VDD = 5V
60
40
TJ = 25oC
20
TJ = 125oC
1
TJ = -55oC
2
3
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 7A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
15
TJ = 125oC
10
TJ = 25oC
5
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
100
ID, DRAIN CURRENT (A)
0
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
100
VGS = 0V
10
1
TJ = 25oC
0.1
TJ = 125oC
TJ = -55oC
0.01
0.001
0.0
4
Figure 5. Transfer Characteristics
FDB8447L Rev.C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
Figure 1. On Region Characteristics
0
VGS = 4V
VGS = 4.5V
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
3000
ID = 14A
VDD = 10V
8
Ciss
CAPACITANCE (pF)
VDD = 20V
6
VDD = 30V
4
2
0
1000
Coss
Crss
f = 1MHz
VGS = 0V
100
0
10
20
30
Qg, GATE CHARGE(nC)
50
0.1
40
Figure 7. Gate Charge Characteristics
40
Figure 8. Capacitance vs Drain
to Source Voltage
80
ID, DRAIN CURRENT (A)
20
IAS, AVALANCHE CURRENT(A)
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
TJ = 25oC
TJ = 125oC
60
VGS = 10V
40
Limited by Package
VGS = 4.5V
20
o
RθJC = 2.1 C/W
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
0
100
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100us
10
0.1
0.1
1ms
1
10ms
100ms
TC = 25oC
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDB8447L Rev.C
100
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
SINGLE PULSE
TJ = MAX RATED
75
o
300
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
50
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
25
1000
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 – T
c
--------------------125
Tc = 25oC
100
SINGLE PULSE
50
-4
10
-3
10
-2
-1
10
10
t, PULSE WIDTH (s)
0
10
1
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.05
-4
10
-3
10
-2
-1
10
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDB8447L Rev.C
5
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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6
©2007 Fairchild Semiconductor Corporation
Rev. I23
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTrench® MOSFET
tm
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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