FDB8860

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB8860 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6mΩ Features Applications „ RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A „ DC-DC Converters „ Qg(5) = 89nC (Typ), VGS = 5V „ Low Miller Charge „ Low QRR Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant FDB8860 Rev A2 ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 1 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET December 2010 Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V, TC < 163oC) 80 A 80 A Continuous (VGS = 5V, TC < 162oC) ID Continuous (VGS = 10V, TC = 25oC, with RθJA = 43oC/W) 31 A Figure 4 A Single Pulse Avalanche Energy (Note 1) 947 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC -55 to +175 oC 0.59 oC/W Pulsed EAS PD TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) RθJA 2 Thermal Resistance Junction to Ambient TO-263,1in copper pad area 62 o C/W 43 o C/W Package Marking and Ordering Information Device Marking FDB8860 Device FDB8860 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 30 - - - V - 1 - - 250 ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V - - VDS = VGS, ID = 250μA 1 1.7 3 ID = 80A, VGS = 10V - 1.6 2.3 ID = 80A, VGS = 5V - 1.9 2.6 ID = 80A, VGS = 4.5V - 2.1 2.7 ID = 80A, VGS = 10V, TJ = 175°C - 2.5 3.6 - 9460 12585 pF - 1710 2275 pF pF TJ = 150°C μA On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance - 1050 1575 RG Gate Resistance f = 1MHz - 1.8 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 165 214 nC - 89 115 nC - 9.1 12 nC - 26 - nC - 18 - nC - 33 - nC VDS = 15V, VGS = 0V, f = 1MHz Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qg(TH) Threshold Gate Charge VGS = 0V to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 2 VDD = 15V ID = 80A Ig = 1.0mA www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics t(on) Turn-On Time - - 340 td(on) Turn-On Delay Time - 14 - ns tr Turn-On Rise Time - 213 - ns td(off) Turn-Off Delay Time - 79 - ns tf Turn-Off Fall Time - 49 - ns toff Turn-Off Time - - 192 ns ISD = 80A - - 1.25 V ISD = 40A - - 1.0 V VDD = 15V, ID = 80A VGS = 5V, RGS = 1Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 80A, dISD/dt = 100A/μs - - 43 ns Qrr Reverse Recovery Charge ISD = 80A, dISD/dt = 100A/μs - - 29 nC Notes: 1: Starting TJ = 25oC, L =0.47mH, IAS = 64A , VDD = 30V, VGS = 10V. 2: Pulse width = 100s ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 3 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted POWER DISSIPATION MULIPLIER 1.2 300 VGS = 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE( oC) NORMALIZED THERMAL IMPEDANCE ZθJA 1 CURRENT LIMITED BY PACKAGE VGS = 5V 150 75 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 225 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 10 10 -1 0 10 1 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 3000 I(PK), PEAK CURRENT (A) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 50 -5 10 -4 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 Figure 4. Peak Current Capability ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 4 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT(A) 10us 100 100 100us 10 CURRENT LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE(V) 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 60 40 20 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 2.5 TJ = 25oC 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 Figure 8. Saturation Characteristics TJ = 175oC 4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 0.0 3.0 1.5 3 VGS = 10V 80 3.5 PULSE DURATION = 80μs DUTY CYCLE=0.5% MAX 2.0 VGS = 3V VGS = 5V 0 4.0 3.5 10000 VGS = 4V 100 Figure 7. Transfer Characteristics ID = 40A 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 1.0 STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 10 1 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 STARTING TJ = 25oC 60 Figure 5. Forward Bias Safe Operating Area 0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1.6 1.4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( OC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1.10 VGS = VDS ID = 250μA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.05 1.0 1.00 0.8 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( oC) 0.90 -80 200 VGS, GATE TO SOURCE VOLTAGE(V) Ciss 10000 Coss 500 0.1 f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 40 80 120 160 200 10 VDD = 15V 8 6 4 2 ID = 80A ID = 1A 0 0 20 40 60 80 100 120 140 160 180 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 0 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 20000 1000 -40 TJ, JUNCTION TEMPERATURE( oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 1mA Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ The Power Franchise® F-PFS™ PowerTrench® Auto-SPM™ PowerXS™ The Right Technology for Your Success™ FRFET® ® Build it Now™ Global Power ResourceSM Programmable Active Droop™ ® CorePLUS™ Green FPS™ QFET Green FPS™ e-Series™ QS™ CorePOWER™ TinyBoost™ Gmax™ Quiet Series™ CROSSVOLT™ TinyBuck™ GTO™ RapidConfigure™ CTL™ TinyCalc™ IntelliMAX™ Current Transfer Logic™ ™ TinyLogic® ISOPLANAR™ DEUXPEED® TINYOPTO™ MegaBuck™ Saving our world, 1mW/W/kW at a time™ Dual Cool™ TinyPower™ MICROCOUPLER™ EcoSPARK® SignalWise™ TinyPWM™ MicroFET™ EfficentMax™ SmartMax™ TinyWire™ MicroPak™ ESBC™ SMART START™ TriFault Detect™ MicroPak2™ SPM® ® TRUECURRENT™* STEALTH™ MillerDrive™ μSerDes™ SuperFET® MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-8 OPTOLOGIC® FACT® ® Ultra FRFET™ OPTOPLANAR SupreMOS® FAST® ® UniFET™ SyncFET™ FastvCore™ VCX™ Sync-Lock™ FETBench™ VisualMax™ ®* FlashWriter® * PDP SPM™ XS™ FPS™ Power-SPM™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 7 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com