FDBL9406-F085T6

MOSFET - Power, Single N-Channel, TOLL 40 V, 1.21 mW, 240 A FDBL9406-F085T6 Features • • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 1.21 mW @ 10 V 240 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter D (9) Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS +20/−16 V ID 240 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) TC = 25°C Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current 179.4 PD TC = 100°C TA = 25°C Steady State ID Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 42.5 A) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) W S (2 − 8) A 45 31.8 PD 4.3 IDM 2817 A TJ, Tstg −55 to +175 °C TA = 100°C TA = 25°C, tp = 10 ms 136.4 68.2 TA = 100°C TA = 25°C W 2.1 IS 221 A EAS 271 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter G (1) Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.1 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 35 H−PSOF8L CASE 100CU ORDERING INFORMATION Device Package Shipping† FDBL9406−F085T6 H−PSOF8L (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 June, 2020 − Rev. 0 1 Publication Order Number: FDBL9406−F085T6/D FDBL9406−F085T6 Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS ID = 250 mA, VGS = 0 V 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, VGS = 0 V Parameter Typ Max Units OFF CHARACTERISTICS VDS = 40 V, VGS = 0 V V 24.9 TJ = 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = +20/−16 V VGS(th) VGS = VDS, ID = 190 mA mV/°C 10 mA ±100 nA 3.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 2 2.8 −6.9 VGS(th)/TJ mV/°C RDS(on) VGS = 10 V, ID = 50 A 1.1 gFS VDS = 15 V, ID = 50 A 143 S Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 4960 pF Output Capacitance Coss 2800 pF Forward Transconductance 1.21 mW CHARGES & CAPACTIANCES Reverse Transfer Capacitance Crss 62 pF 75 nC 9 nC Qgs 22 nC Qgd 16 nC 27 ns 44 ns td(off) 61 ns tf 26 ns Total Gate Charge QG(tot) Threshold Gate Charge QG(th) Gate−to−Source Charge Gate−to−Drain Charge VGS = 10 V, VDS = 20 V, ID = 50 A SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS IS = 50 A, VGS = 0 V TJ = 25°C 0.8 IS = 50 A, VGS = 0 V TJ = 125°C 0.6 V 78 ns 39 ns tb 39 ns Qrr 101 nC Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 FDBL9406−F085T6 TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 9.0 V 400 300 6.0 V 200 100 5.0 V 0 0.5 1.5 1.0 2.0 200 TJ = 25°C 100 TJ = 175°C 2 3 TJ = −55°C 6 5 4 7 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 1. On−Region Characteristics 6 4 TJ = 175°C 2 TJ = 25°C 4 6 5 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage 2.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 300 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 1.8 400 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 50 A 3 500 0 10 0 VDS = 5 V 7.0 V 500 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 600 8.0 V VGS = 10 V VGS = 10 V ID = 50 A 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 IDSS, DRAIN−TO−SOURCE LEAKAGE CURRENT (mA) ID, DRAIN CURRENT (A) 600 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) 8 2.5 TJ = 25°C 2.0 VGS = 6 V 1.5 VGS = 10 V 1.0 0.5 10 20 40 30 50 60 70 80 90 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 TJ = 175°C 100 TJ = 150°C 10 TJ = 125°C 1 TJ = 85°C 0.1 TJ = 25°C 0.01 0.001 5 Figure 5. On−Resistance Variation with Temperature 10 15 20 25 30 35 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 100 40 FDBL9406−F085T6 TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS COSS 1K 100 CRSS 10 VGS = 0 V f = 1 MHz 1 0.1 1 100 10 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 20 0 40 80 60 300 IS, REVERSE DRAIN CURRENT (A) t, SWITCHING TIME (ns) QGD 5 Figure 8. Gate−to−Source Voltage vs. Total Charge td(off) tr td(on) tf 10 1 100 VGS = 0 V 100 10 1 0.1 TJ = 175°C 0.01 0.001 TJ = 25°C 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 400 IAS, AVALANCHE CURRENT (A) 6000 1000 ID, DRAIN CURRENT(A) QGS 6 Figure 7. Capacitance Variation 100 10 ms 100 100 ms Operation in this area may be limited 1 ms RDS(on) Limit Thermal Limit Package Limit 1 0.1 8 7 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 20 V ID = 50 A 10 QG(tot) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 10 0.1 1 10 ms 10 100 TJ(initial) = 25°C 10 1 100 TJ(initial) = 150°C 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (S) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 FDBL9406−F085T6 TYPICAL CHARACTERISTICS 200 TJ = 25°C GFS (S) 150 100 50 0 0 10 20 30 40 50 ID, DRAIN−TO−SOURCE CURRENT (A) RqJC, EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 13. GFS vs. ID 2 1 50% Duty Cycle 20% 0.1 0.01 0.001 10% 5% 2% 1% Single Pulse 0.000001 0.00001 0.0001 0.001 t, RECTANGULAR PULSE DURATION (s) Figure 14. Thermal Response www.onsemi.com 5 0.01 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE A DATE 06 JAN 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXX XXXXXXXX A Y WW ZZ XXXX DOCUMENT NUMBER: DESCRIPTION: = Assembly Location = Year = Work Week = Assembly Lot Code = Specific Device Code 98AON13813G H−PSOF8L 11.68x9.80 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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