FDC608PZ

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) D S D 2.5 V Specified D G TSOT−23−6 CASE 419BL FDC608PZ, FDC608PZ-F171 Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions. Features 1 6 2 5 3 4 MARKING DIAGRAM • –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.5 V 608Z MG • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • SuperSOT TM –6 Package: Small Footprint (72% Smaller than • D Standard SO–8) Low Profile (1 mm Thick) These Devices are Pb−Free and Halide Free G 1 608Z M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Parameter Symbol Ratings Unit VDSS Drain−Gate Voltage –20 V VGSS Gate−Source Voltage ±12 V ID Drain Current –5.8 –20 A PD Maximum Power Dissipation (Note 1a) (Note 1b) 1.6 0.8 W –55 to +150 °C TJ, TSTG – Continuous (Note 1a) – Pulsed Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package FDC608PZ TSOT−23−6 (Pb-Free/ Halide Free) FDC608PZ−F171 TSOT−23−6 (Pb-Free/ Halide Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Value Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) Parameter 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W Symbol © Semiconductor Components Industries, LLC, 1997 March 2022 − Rev. 3 1 Publication Order Number: FDC608PZ/D FDC608PZ, FDC608PZ−F171 ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min Typ Max Unit –20 − − V − mV/°C OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C − −10 IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V − − −1 mA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V − − ±10 mA VDS = VGS, ID = –250 mA ON CHARACTERISTICS (Note 2) VGS(th) DV GS(th) DT J RDS(on) ID(on) gFS –0.4 –1.0 –1.5 V Gate Threshold Voltage Temperature Coefficient Gate Threshold Voltage ID = −250 mA, Referenced to 25°C − 3 − mV/°C Static Drain–Source On–Resistance VGS = –4.5 V, ID = –5.8 A − 26 30 mW VGS = –2.5 V, ID = –5.0 A − 38 43 VGS = –4.5 V, ID = –5.8 A, TJ = 125°C − 35 − On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 − − A Forward Transconductance VDS = –10 V, ID = –5.8 A − 22 − S VDS = –10 V, VGS = 0 V, f = 1.0 MHz − 1330 − pF − 270 − pF − 230 − pF VGS = 15 mV, f = 1.0 MHz − 12 − W VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 W − 13 24 ns − 8 16 ns DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Input Capacitance SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time − 91 145 ns tf Turn–Off Fall Time − 60 96 ns Qg Total Gate Charge − 17 23 nC Qgs Gate–Source Charge − 3 − nC Qgd Gate–Drain Charge − 6 − nC Maximum Continuous Drain–Source Diode Forward Current − − –1.3 A Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) − –0.7 –1.2 V trr Diode Reverse Recovery Time IF = –5.8 A, diF/dt = 100 A/ms − 40 60 ns Qrr Diode Reverse Recovery Charge IF = –5.8 A, diF/dt = 100 A/ms − 15 23 nC VDS = –10 V, ID = –5.8 A, VGS = –4.5 V DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 78°C/W when mounted on a 1 in2 pad of 2oz copper on FR−4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤2.0%. www.onsemi.com 2 FDC608PZ, FDC608PZ−F171 TYPICAL CHARACTERISTICS −3.5 V RDS(ON), Normalized Drain−Source On−Resistance −ID, Drain Current (A) 2.6 −2.5 V −4.5 V 15 −3.0 V VGS = −2.0 V 10 5 0 0 0.5 1 1.5 2 2.5 2.2 1.8 1.4 −2.5 V −3.0 V 0 5 RDS(ON), On−Resistance (W) 1.1 0.9 0 25 50 75 100 124 0.08 0.06 TA = 125°C 125 °C 0.04 TA = 25°C 0.02 150 0 2 4 6 8 10 −VGS, Gate To Source Voltage (V) Figure 4. On−Resistance Variation with Gate−to−Source Voltage Figure 3. On-Resistance Variation With Temperature 20 100 −IS, Reverse Drain Current (A) VDS = −5 V −ID, Drain Current (A) 20 ID = −2.9 A TJ, Junction Temperature (5C) 15 10 TA = −55°C 125°C 5 25°C 0 15 0.1 ID = −5.8 A VGS = −4.5 V −25 10 −4.5 V Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 1.5 0.7 −50 −4.0 V −ID, Drain Current (A) Figure 1. On−Region Characteristics 1.3 −3.5 V 1 0.6 3 VGS = −2.0 V −VDS, Drain To Source Voltage (V) RDS(ON), Normalized Drain−Source On−Resistance D 20 0 0.5 1 1.5 2 2.5 VGS = 0 V 10 1 0.1 TA = 125°C 0.01 0.001 0.0001 0 3 25°C −VGS, Gate To Source Voltage (V) −55°C 0.2 0.4 0.6 0.8 1 1.2 1.4 −VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics www.onsemi.com 3 FDC608PZ, FDC608PZ−F171 10 −VGS, Gate−Source Voltage (V) 2500 VDS = −5 V ID = −5.8 A 8 Capacitance (pF) 2000 6 −10 V 4 Ciss 1500 1000 2 0 f = 1 MHz VGS = 0 V −15 V Coss 500 10 0 20 30 0 40 Crss 0 2 Qg, Gate Charge (nC) 0.1 0.01 0.1 P(pk), Peak Transient Power (W) −ID, Drain Current (A) 1 100 ms DC 1s 1 ms 10 ms 100 ms VGS = −4.5 V SINGLE PULSE RqJA = 156°C/W TA = 25°C 1 10 10 10 SINGLE PULSE RqJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 100 0.1 −VDS, Drain−Source Voltage (V) 1 10 100 t1, Time (sec) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Maximum Safe Operating Area r(t), Normalized Effective Transient Thermal Resistance 8 Figure 8. Capacitance Characteristics 100 10 6 −VDS, Drain To Source Voltage (V) Figure 7. Gate Charge Characteristics RDS(ON) LIMIT 4 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 156°C/W 0.2 0.1 0.1 P(pk) 0.05 0.01 0.001 0.00001 0.02 0.01 t1 TJ − TA = P * RqJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.0001 t2 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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