FDC610PZ

P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. „ Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A „ Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A „ Low gate charge (17nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). Application „ RoHS Compliant „ DC - DC Conversion S D D 1 6 D D 2 5 D G 33 4 S D G D D Pin 1 SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous Ratings –30 Units V ±25 V (Note 1a) –4.9 -Pulsed PD TJ, TSTG A –20 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range W –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 156 °C/W Package Marking and Ordering Information Device Marking .610Z Device FDC610PZ ©2007 Semiconductor Components Industries, LLC. October-2017, Rev.2 Package SSOT6 Reel Size 7’’ 1 Tape Width 8mm Quantity 3000units Publication Order Number: FDC610PZ/D FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –30 V ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24V, VGS = 0V –1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA –3 V –22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 6 VGS = –10V, ID = –4.9A 36 rDS(on) Static Drain to Source On Resistance VGS = –4.5V, ID = –3.7A 58 75 VGS = –10V, ID = –4.9A, TJ = 125°C 50 60 VDD = –10V, ID = –4.9A 15 gFS Forward Transconductance –1 –2.2 mV/°C 42 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = –15V, VGS = 0V, f = 1MHz f = 1MHz 755 1005 pF 145 195 pF 125 190 pF Ω 13 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to –10V VGS = 0V to –4.5V Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –15V, ID = –4.9A VGS = –10V, RGEN = 6Ω VDD = –15V, ID = –4.9A 7 14 4 10 ns ns 33 53 ns 23 37 ns 17 24 nC 9 13 nC 2.9 nC 4.3 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A trr Reverse Recovery Time Qrr Reverse Recovery Charge (Note 2) IF = –4.9A, di/dt = 100A/µs –0.8 –1.3 A –1.2 V 19 35 ns 9 18 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. www.onsemi.com 2 b. 156°C/W when mounted on a minimum pad of 2 oz copper. FDC610PZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 5.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -10V 15 VGS = -5V VGS = -4.5V 10 VGS = -4V 5 VGS = -3.5V 0 0 1 2 3 4.5 4.0 VGS = -4V 3.5 3.0 VGS = -4.5V 2.5 2.0 VGS = -5V 1.5 1.0 0.5 4 VGS = -10V 0 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 -50 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDD = -5V 10 TJ = 150oC TJ = 25oC TJ = -55oC 1 2 3 4 100 TJ = 125oC 50 TJ = 25oC 3 4 5 6 7 8 9 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 150 -VGS, GATE TO SOURCE VOLTAGE (V) 20 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = -4.9A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 15 20 200 1.2 0.6 -75 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = -4.9A VGS = -10V 1.4 10 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -3.5V 5 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDC610PZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 ID = -4.9A Ciss 1000 8 VDD = -10V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -15V 6 VDD = -20V 4 2 Coss Crss 100 0 0 4 8 12 16 50 0.1 20 Figure 7. Gate Charge Characteristics 10 30 Figure 8. Capacitance vs Drain to Source Voltage 5 10 30 VDS = 0V 4 10 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT(uA) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 3 10 2 10 TJ = 1 10 150oC 0 10 -1 10 TJ = 25oC 100us 1ms 1 0 5 10 15 20 25 30 TA = 25 C 1s THIS AREA IS LIMITED BY rDS(on) 10s DC o 0.01 0.1 35 100ms RθJA = 156oC/W 0.1 10 -3 10ms SINGLE PULSE TJ = MAX RATED -2 10 f = 1MHz VGS = 0V -VGS, GATE TO SOURCE VOLTAGE (V) 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V SINGLE PULSE RθJA = 156oC/W TA = 25oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 2 10 3 10 FDC610PZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 156 C/W 1E-3 -4 10 -3 10 -2 10 -1 10 0 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve www.onsemi.com 5 1 10 2 10 3 10 FDC610PZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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