FDC6324L

March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage high side load switch application where low conduction loss and ease of driving are needed. VDROP =0.2V @ VIN=12V, I L=1A, VON/OFF=1.5 to 8V VDROP =0.3V @ VIN=5V, I L=1A, VON/OFF=1.5 to 8V. High density cell design for extremely low on-resistance. VON/OFF Zener protection for ESD ruggedness. Body Model. >6KV Human TM SuperSOT -6 package design using copper lead frame for superior thermal and electrical capabilities. SOT-23 SuperSOTTM-6 SuperSOTTM-8 Vin,R1 4 ON/OFF 5 SO-8 SOIC-16 SOT-223 EQUIVALENT CIRCUIT 3 Vout,C1 2 Vout,C1 1 R2 Q2 + IN VD R O P - OUT Q1 ON/OFF R1,C1 6 pin 1 SuperSOT TM-6 Absolute Operating Range See Application Circuit TA = 25°C unless otherwise noted Symbol Parameter FDC6324L Units VIN Input Voltage Range 3 - 20 V VON/OFF ON/OFF Voltage Range 1.5 - 8 V (Note 1) 1.5 A (Note 1 & 3) 2.5 IL Load Current @ VDROP =0.5V - Continuous - Pulsed PD Maximum Power Dissipation TJ ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) (Note 2a) 0.7 W -55 to 150 °C 6 kV THERMAL CHARACTERISTICS R θJA Thermal Resistance, Junction-to-Ambient (Note 2a) 180 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 2) 60 °C/W © 1999 Fairchild Semiconductor Corporation FDC6324L Rev. D Electrical Characteristics (T Symbol A = 25°C unless otherwise noted) Parameter Conditions Min Typ Max Units VIN = 20 V, VON/OFF = 0 V 1 µA VIN = -20 V, VON/OFF = 0 V -1 µA 3 20 V 1.5 8 V V OFF CHARACTERISTICS I FL Forward Leakage Current I RL Reverse Leakage Current ON CHARACTERISTICS (Note 3) VIN Input Voltage VON/OFF On/Off Voltage VDROP Conduction Voltage Drop @ 1A Load Current IL VIN = 10 V, VON/OFF = 3.3V 0.135 0.2 VIN = 5 V, VON/OFF = 3.3 V 0.215 0.3 VDROP = 0.2 V, VIN = 10 V, VON/OFF = 3.3 V 1 VDROP = 0.3 V, VIN = 5 V, VON/OFF = 3.3 V 1 A Notes: 1. V IN=20V, VON/OFF=8V, V DROP=0.5V, T A =25oC 2. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. P D( t ) = TJ−T A Rθ J A(t) = TJ −TA Rθ J +R C θ CA(t) = I 2D ( t ) × RDS(ON)@T J Typical Rθ JA for single device operation using the board layouts shown below on FR-4 PCB in astill air environment: a. 180oC/W when mounted on a 2oz minimum copper pad. 2a Scale 1 : 1 on letter size paper 3. Pulse Test: Pulse Width < 300µs, Duty Cycle< 2.0% FDC6324L Rev. D Typical Electrical Characteristics (TA = 25 O C unless otherwise noted ) 0.5 0.5 0.4 0.3 , (V) O R TJ = 25°C 0.3 0.2 VD 0.4 V D R O, (V) P TJ = 125°C P TJ = 125°C 0.2 TJ = 25°C V IN = 12V V ON/OFF = 1.5 - 8V PW =300us, D≤ 2% 0.1 0 0 0 1 2 I L ,(A) 3 V IN = 5V V ON/OFF = 1.5 - 8V PW =300us, D≤ 2% 0.1 4 0 1 Figure 1. VDROP Versus IL at VIN=12V. 3 4 Figure 2. VDROP Versus IL at VIN=5.0V. 1 0.45 I = 1A L VON/OFF = 1.5 - 8V PW =300us, D≤ 2 % I L = 1A VIN = 5V PW =300us, D≤ 2 % 0.4 RDS(ON), (Ohm) 0.8 V DROP (V) 2 I L (A) 0.6 0.4 T J = 125°C 0.35 TJ = 125°C 0.3 0.25 TJ = 25°C 0.2 0.2 TJ = 25°C 0 1 2 3 V IN 4 5 (V) 0.15 0 1 2 3 4 5 I L , (A) Figure 4. R(ON) Versus IL at V IN=5.0V. Figure 3. VDROP Versus V IN at IL=1A. 1 I L = 1A V ON/OFF = 1.5 - 8V PW =300us, D≤ 2 % R (ON),(Ohm) 0.8 0.6 0.4 TJ = 125°C 0.2 TJ = 25°C 0 1 2 3 4 5 V IN , (V) Figure 5. On Resistance Variation with Input Voltage. FDC6324L Rev.D Typical Electrical Characteristics (TA = 25 O C unless otherwise noted ) 500 500 300 200 400 td(off) Vin = 12V IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF Time (us) Time (us) 400 Vin = 5V IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF tf 300 200 td(off) tf 100 100 tr tr 0 0 20 40 60 R2 (KOhm) td(on) 80 0 100 0 Figure 6. Switching Variation with R2 at Vin=12V and R1=300KOhm. 500 tr 200 100 0 td(on) tf td(off) 0 20 40 60 R2 (KOhm) 80 80 60 40 5V 20 3.3V 0 100 0 20 Vdrop (mV) 40 60 R2 (KOhm) 80 100 Figure 9. % of Current Overshoot Variation with Vin and R2 . ton 2,000 1,600 100 IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF Vin = 12V 100 Figure 8. Switching Variation with R2 at Vin=3.3V and R1=300KOhm. IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF td(on) 80 120 % of Current Overshoot Time (us) 300 40 60 R2 (KOhm) Figure 7. Switching Variation with R2 at Vin=5V and R1=300KOhm. Vin = 3.3V IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF 400 20 t d(on) t off tr t d(off) tf 90% 90% Vin = 3.3V 1,200 VO U T 10% 800 10% INVERTED 90% 5V 400 V IN 12V 0 0 20 40 60 R2 (KOhm) 80 100 50% 50% 10% PULSE WIDTH Figure 10. Vdrop Variation with Vin and R2 . Figure 11. Switching Waveforms. FDC6324L Rev. D Typical Electrical Characteristics (TA = 25 O C unless otherwise noted ) IL , DRAIN CURRENT (A) 10 3 1 10 0u s 1m 10 s ms IT LIM N) R(O 10 0m s 1s 0.3 0.1 0.03 0.01 0.1 DC VIN = 12V SINGLE PULSE Rθ JA = See Note 2a TA = 25°C 0.2 0.5 1 2 V DROP (V) 5 10 20 30 Figure 12. Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 RθJA (t) = r(t) * R θJA R θJA = See Note 2a 0.1 P(pk) 0.05 t1 0.02 0.02 0.01 0.01 t2 TJ - TA = P * R θJA(t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.00001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 13. Transient Thermal Response Curve. Note: Thermal characterization performed on the conditions described in Note 2a. Transient thermal response will change depends on the circuit board FDC6324L Rev. D FDC6324L Load Switch Application APPLICATION CIRCUIT Q2 IN OUT C1 R1 ON/OFF Q1 Co LOAD R2 Component Values R1 Typical 10k - 1MΩ R2 Typical 0 - 10kΩ C1 Typical 1000pF General Description This device is particularly suited for computer peripheral switching applications where 20V input and 1A output current capability are needed. This load switch integrates a small N-Channel Power MOSFET (Q1) which drives a large P-Channel Power MOSFET (Q2) in one tiny SuperSOTTM-6 package. A load switch is usually configured for high side switching so that the load can be isolated from the active power source. A P-Channel Power MOSFET, because it does not require its drive voltage above the input voltage, is usually more cost effective than using an N-Channel device in this particular application. A large P-Channel Power MOSFET minimizes voltage drop. By using a small N-Channel device the driving stage is simplified. (optional) (optional) Design Notes R1 is needed to turn off Q2. R2 can be used to soft start the switch in the case the output capacitance Co is small. R2 ≤ should be at least 10 times smaller than R1 to guarantee Q1 turns on. By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by the equation IBIAS _LOSS = R 1Vin+R2 when the switch is ON. IBIAS_LOSS can be minimized by large R1. R2 and CRSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on, additional capacitance C1 can be added externally to slow down the turn on. FDC6324L Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.