FDD5N50TF_WS

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Description Features UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A • Low Gate Charge (Typ. 11 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D D G S MOSFET Maximum Ratings Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage D-PAK G S TC = 25oC unless otherwise noted. Parameter - Continuous (TC = 25oC) FDD5N50TM-WS 500 Unit V ±30 V 4 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy (Note 1) 4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns - Continuous (TC = 100oC) - Pulsed (Note 1) 16 A (Note 2) 256 mJ (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 2.4 - Derate Above 25oC 40 W 0.3 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD5N50TM-WS RθJC Thermal Resistance, Junction to Case, Max. 1.4 RθJA Thermal Resistance, Junction to Ambient, Max. 110 ©2008 Semiconductor Components Industries, LLC. October-2017,Rev 3 Unit o C/W PPublication Order Number: FDD5N50/D FDD5N50 — N-Channel UniFETTM MOSFET FDD5N50 Part Number FDD5N50TM-WS Top Mark FDD5N50 Electrical Characteristics Symbol Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 2 A - 1.15 1.4 Ω gFS Forward Transconductance VDS = 20 V, ID = 2 A - 4.3 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 480 640 pF - 66 88 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400 V, ID = 5 A, VGS = 10 V (Note 4) - 5 8 pF - 11 15 nC - 3 - nC - 5 - nC - 13 36 ns - 22 54 ns - 28 66 ns - 20 50 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 25 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4 A - - 1.4 V trr Reverse Recovery Time 300 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 5 A, dIF/dt = 100 A/μs - 1.8 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 32 mH, IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FDD5N50 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 20 10 ID,Drain Current[A] ID,Drain Current[A] 20 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.04 0.1 2. TC = 25 C 1 10 VDS,Drain-Source Voltage[V] 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.1 5 6 7 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 70 2.5 VGS = 10V 2.0 VGS = 20V 1.5 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 1.0 *Note: TJ = 25 C 0 3 6 ID, Drain Current [A] 9 1.6 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Ciss 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 750 1 0.4 12 Figure 5. Capacitance Characteristics 1000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.0 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz 500 Coss 250 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] 0 30 www.onsemi.com 3 *Note: ID = 5A 0 4 8 Qg, Total Gate Charge [nC] 12 FDD5N50 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 *Notes: 1. VGS = 0V 2. ID = 250μA -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -75 175 Figure 9. Maximum Safe Operating Area -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 4.5 30 30μs 10 4 100μs ID, Drain Current [A] 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C 3 2 1 o 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve (t), Thermal Response [oC/W] 1 Z 0.01 2. TJ = 150 C 3. Single Pulse θJC Thermal Response [ZθJC] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 2A 0.5 3 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 t2 *Notes: -4 10 -3 -2 -1 10 10 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] www.onsemi.com 4 0 10 1 10 150 FDD5N50 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) FDD5N50 — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS DUT VGS 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FDD5N50 — N-Channel UniFETTM MOSFET DUT FDD5N50 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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