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FDG6318PZ
Dual P-Channel, Digital FET
General Description
Features
These dual P-Channel logic level enhancement mode
MOSFET are produced using Fairchild Semiconductor’s
especially tailored to minimize on-state resistance. This
device has been designed especially for bipolar digital
transistors and small signal MOSFETS
• -0.5A, -20V.
r DS(ON) = 780mΩ (Max)@ VGS = -4.5 V
rDS(ON) = 1200mΩ (Max) @ V GS = -2.5 V
• Very low level gate drive requirements allowing direct
operation in 3V circuits (V GS(TH) < 1.5V).
• Gate-Source Zener for ESD ruggedness (>1.4kV Human
Body Model).
Applications
• Battery management
• Compact industry standard SC-70-6 surface mount
package.
S
G
D
D
S 1 or 4
6 or 3 D
G 2 or 5
5 or 2 G
D 3 or 6
4 or 1 S
G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin1 and pin 4 are interchangeable.
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
-20
Units
V
VGS
Gate to Source Voltage
±12
V
-0.5
A
-0.3
A
Drain Current
Continuous (TC = 25oC, VGS = - 4.5V)
ID
o
Continuous (TC = 100 C, VGS = - 2.5V)
Pulsed
Figure 4
PD
Power dissipation
0.3
W
Derate above 25°C
2.4
mW/oC
TJ, TSTG
Operating and Storage Temperature
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500Ω )
o
-55 to 150
C
1.4
kV
Thermal Characteristics
RθJA
Thermal Resistance Junction to Ambient (Note 1)
415
o
C/W
Package Marking and Ordering Information
Device Marking
.68
©2003 Fairchild Semiconductor Corporation
Device
FDG6318PZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000
FDG6318PZ Rev. B
FDG6318PZ
January 2003
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-20
-
-
V
IDSS
Zero Gate Voltage Drain Current
VGS = −16V , VGS = 0V
-
-
-3
µA
IGSS
Gate to Source Leakage Current
VGS = ±12V , VGS = 0V
-
-
±10
µA
V
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = -250µA
-0.65
-0.9
-1.5
ID = -0.5A, VGS = -4.5V
-
580
780
ID = -0.4A, VGS = -2.5V
-
910
1200
-
85.4
-
-
24.9
-
pF
-
8.83
-
pF
-
1.08
1.62
nC
-
0.67
1.0
nC
-
0.21
-
nC
-
0.33
-
nC
ns
mΩ
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS = -10V, VGS = 0V,
f = 1MHz
Qg(TOT)
Total Gate Charge at -4.5V
VGS = 0V to -4.5V
Qg(-2.5)
Total Gate Charge at -2.5V
VGS = 0V to -2.5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10V
ID = -0.5A
Ig = 1.0mA
pF
Switching Characteristics (VGS = -4.5V)
tON
Turn-On Time
-
-
35
td(ON)
Turn-On Delay Time
-
10
-
ns
tr
Rise Time
-
13
-
ns
td(OFF)
Turn-Off Delay Time
-
40
-
ns
tf
Fall Time
-
24
-
ns
tOFF
Turn-Off Time
-
-
96
ns
VDD = -10V, ID = -0.5A
VGS = -4.5V, RGS = 120Ω
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Voltage
ISD = -0.5A
-
-0.9
-1.2
V
trr
Reverse Recovery Time
ISD = -0.5A, dISD/dt = 100A/µs
-
-
22
ns
QRR
Reverse Recovered Charge
ISD = -0.5A, dISD/dt = 100A/µs
-
-
16
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the center drain pad. RθJC is guaranteed by design while RθCA is determined by user’s board design. RθJA = 415 oC/W when mounted on a 1inch2 copper pad.
©2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
FDG6318PZ
Electrical Characteristics TA = 25°C unless otherwise noted
FDG6318PZ
Typical Characteristic
TA = 25°C unless otherwise noted
0.6
1.2
-ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
VGS = -4.5V
0.4
VGS = -2.5V
0.2
0.2
0
0
0
25
50
75
100
125
150
25
50
TA , AMBIENT TEMPERATURE (oC)
75
100
125
150
TA, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJA, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
10-5
10 -4
10-3
10-2
10-1
100
101
102
10 3
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
20
-IDM, PEAK CURRENT (A)
TA = 25 oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
1
VGS = -4.5V
VGS = -2.5V
0.4
10-5
10 -4
10-3
10 -2
10-1
100
10 1
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
FDG6318PZ
Typical Characteristic (Continued) TA = 25°C unless otherwise noted
3
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
10
100µs
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = -10V
TJ = 150oC
2
TJ = 25oC
TJ = -55oC
1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
0.1
0.05
0
1
10
0
30
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
3
4
Figure 6. Transfer Characteristics
3
1.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -4.5V
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
-ID, DRAIN CURRENT (A)
2
-VGS , GATE TO SOURCE VOLTAGE (V)
TA = 25oC
2
VGS = -2.5V
1
VGS = -2V
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = -0.5A
0.9
0.8
0.7
ID = -0.1A
0.6
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
2
Figure 7. Saturation Characteristics
4
5
6
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.50
1.2
VGS = VDS, I D = 250µA
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
3
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.25
1.00
1.0
0.8
VGS = -4.5V, ID = -0.5A
0.75
0.6
-80
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
160
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDG6318PZ Rev. B
FDG6318PZ
Typical Characteristic (Continued) TA = 25°C unless otherwise noted
200
ID = 250µA
CISS = CGS + CGD
100
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.10
1.05
1.00
COSS ≅ CDS + CGD
CRSS = C GD
10
VGS = 0V, f = 1MHz
5
0.95
-80
-40
0
40
80
120
160
0.1
1
TJ , JUNCTION TEMPERATURE (oC)
10
20
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
-VGS , GATE TO SOURCE VOLTAGE (V)
10
VDD = -10V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = -0.5A
ID = -0.1A
2
0
0
0.5
1.0
1.5
2.0
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
©2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
.SUBCKT FDG6318PZ 2 1 3 ;
CA 12 8 0.6e-10
CB 15 14 1.1e-10
CIN 6 8 0.75e-10
rev January 2003
ESG
10
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 6 DPLCAPMOD
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 0.47e-9
LSOURCE 3 7 0.47e-9
DRAIN
2
RLDRAIN
RSLC1
51
+
5
ESLC
51
RSLC2
EBREAK 5 11 17 18 -23.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN
5
8 +
6
+
17
18
EBREAK
50
DPLCAP
RDRAIN
16
EVTHRES
+ 19
8
EVTEMP
LGATE
RGATE
9
20
18 +
22
21
6
MWEAK
MMED
MSTRO
RLGATE
DBREAK
LSOURCE
CIN
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 280e-3
RGATE 9 20 12.4
RLDRAIN 2 5 10
RLGATE 1 9 4.7
RLSOURCE 3 7 4.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 190e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
DBODY
11
RSOURCE
8
SOURCE
3
7
RLSOURCE
S1A
12
13
8
S2A
15
14
13
S1B
RBREAK
18
17
S2B
13
RVTEMP
CB
CA
+
EGS
6
8
+
EDS 5
8
IT
14
19
VBAT
+
8
22
RVTHRES
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*20),2.5))}
.MODEL DBODYMOD D (IS = 7.7e-11 N=1.277 RS = 1e-3 TRS1 = 2.8e-1 TRS2 = 3e-4 XTI=0 IKF=0.5 CJO = 3.9e-11
TT=33e-9 M = 0.50)
.MODEL DBREAKMOD D (RS = 5.3e-1 TRS1 = 5.5e-3 TRS2 = -9e-5)
.MODEL DPLCAPMOD D (CJO = 0.5e-10 IS = 1e-30 N = 10 M = 0.55)
.MODEL MMEDMOD PMOS (VTO = -1.17 KP = 0.6 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 12.4)
.MODEL MSTROMOD PMOS (VTO = -1.45 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD PMOS (VTO = -0.99 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 124 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 5.5e-4 TC2 = -1e-7)
.MODEL RDRAINMOD RES (TC1 = 2.8e-3 TC2 = 4.9e-6)
.MODEL RSLCMOD RES (TC1 = 3.7e-3 TC2 = 7.8e-6)
.MODEL RSOURCEMOD RES (TC1 = 3e-3 TC2 = 5.2e-6)
.MODEL RVTHRESMOD RES (TC1 = 9e-4 TC2 = 3e-7)
.MODEL RVTEMPMOD RES (TC1 = -5.5e-4 TC2 = -1e-9)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = 0.5 VOFF= 0.2)
VON = 0.2 VOFF= 0.5)
VON = 0.4 VOFF= -0.1)
VON = -0.1 VOFF= 0.4)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
FDG6318PZ
PSPICE Electrical Model
REV January 2003
template fdg6318pz n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 7.7e-11, nl=1.277, rs = 1e-3, trs1 = 2.8e-1, trs2 = 3e-4, xti=0, cjo = 3.9e-11, ikf=0.5, tt = 33e-9, m = 0.50)
dp..model dbreakmod = (rs = 5.3e-1, trs1 = 5.5e-3, trs2 = -9.0e-5)
dp..model dplcapmod = (cjo = 0.5e-10, isl=10e-30, nl=10, m=0.55)
m..model mmedmod = (type=_p, vto = -1.17, kp=0.6, is=1e-30, tox=1)
m..model mstrongmod = (type=_p, vto = -1.45, kp = 1.5, is = 1e-30, tox = 1)
m..model mweakmod = (type=_p, vto = -0.99, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = 0.2)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = 0.2, voff = 0.5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0.4, voff = -0.1)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = -0.1, voff = 0.4)
ESG
c.ca n12 n8 = 0.6e-10
c.cb n15 n14 = 1.1e-10
c.cin n6 n8 = 0.75e-10
LDRAIN
+
DRAIN
2
5
RLDRAIN
RSLC1
51
RSLC2
dp.dbody n5 n7 = model=dbodymod
dp.dbreak n7 n11 = model=dbreakmod
dp.dplcap n10 n6 = model=dplcapmod
ISCL
+
17
18
EBREAK
50
DPLCAP
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 0.47e-9
l.lsource n3 n7 = 0.47e-9
8
6
10
EVTEMP
LGATE
GATE
1
RDRAIN
16
EVTHRES
+ 19
8
RGATE
9
20
18 +
22
21
6
MWEAK
MMED
DBREAK
MSTRO
RLGATE
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
DBODY
11
LSOURCE
CIN
RSOURCE
8
SOURCE
3
7
RLSOURCE
S1A
S2A
res.rbreak n17 n18 = 1, tc1 = 5.5e-4, tc2 = -1e-7
15
14
13
res.rdrain n50 n16 = 280e-3, tc1 = 2.8e-3, tc2 = 4.9e-6 12
8
13
res.rgate n9 n20 = 12.4
S1B
S2B
res.rldrain n2 n5 = 10
13
CB
res.rlgate n1 n9 = 4.7
CA
14
+
res.rlsource n3 n7 = 4.7
+
6
res.rslc1 n5 n51= 1e-6, tc1 = 3.7e-3, tc2 =7.8e-6
EDS 5
EGS
8
8
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 190e-3, tc1 = 3e-3, tc2 =5.2e-6
res.rvtemp n18 n19 = 1, tc1 = -5.5e-4, tc2 = -1e-9
res.rvthres n22 n8 = 1, tc1 = 9e-4, tc2 = 3e-7
RBREAK
18
17
RVTEMP
IT
19
VBAT
+
8
22
RVTHRES
spe.ebreak n5 n11 n17 n18 = -23.3
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n5 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/20))** 2.5))
}
}
©2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
FDG6318PZ
SABER Electrical Model
th
REV January 2003
FDG6318PZ_JA Junction Ambient
Copper Area= 1sq.in
CTHERM1 Junction c2 0.17e-4
CTHERM2 c2 c3 2.7e-4
CTHERM3 c3 c4 5.5e-4
CTHERM4 c4 c5 1.4e-3
CTHERM5 c5 c6 2.2e-3
CTHERM6 c6 c7 2.6e-3
CTHERM7 c7 c8 6.6e-3
CTHERM8 c8 Ambient 0.29
RTHERM1 Junction c2 11.2
RTHERM2 c2 c3 11.5
RTHERM3 c3 c4 12.5
RTHERM4 c4 c5 27
RTHERM5 c5 c6 81
RTHERM6 c6 c7 88
RTHERM7 c7 c8 92
RTHERM8 c8 Ambient 93
CTHERM1
RTHERM1
8
CTHERM2
RTHERM2
7
RTHERM3
CTHERM3
6
RTHERM4
rtherm.rtherm1 th c2 = 11.2
rtherm.rtherm2 c2 c3 = 11.5
rtherm.rtherm3 c3 c4 = 12.5
rtherm.rtherm4 c4 c5 = 27
rtherm.rtherm5 c5 c6 = 81
rtherm.rtherm6 c6 c7 = 88
rtherm.rtherm7 c7 c8 = 92
rtherm.rtherm8 c8 tl = 93
}
CTHERM4
5
SABER Thermal Model
SABER thermal model FDG6318PZ
Copper Area= 1sq.in
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 = 0.17e-4
ctherm.ctherm2 c2 c3 = 2.7e-4
ctherm.ctherm3 c3 c4 = 5.5e-4
ctherm.ctherm4 c4 c5 = 1.4e-3
ctherm.ctherm5 c5 c6 = 2.2e-3
ctherm.ctherm6 c6 c7 = 2.6e-3
ctherm.ctherm7 c7 c8 = 6.6e-3
ctherm.ctherm8 c8 tl = 0.29
RTHERM5
CTHERM5
4
RTHERM6
CTHERM6
3
RTHERM7
CTHERM7
2
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©2003 Fairchild Semiconductor Corporation
JUNCTION
AMBIENT
FDG6318PZ Rev.B
FDG6318PZ
SPICE Thermal Model
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