FDG332PZ
tm
P-Channel PowerTrench® MOSFET
-20V, -2.6A, 97mΩ
Features
General Description
Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -2.6A
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench® process. It has been optimized for
battery power management applications.
Max rDS(on) = 115mΩ at VGS = -2.5V, ID = -2.2A
Max rDS(on) = 160mΩ at VGS = -1.8V, ID = -1.9A
Max rDS(on) = 330mΩ at VGS = -1.5V, ID = -1.0A
Applications
Very low level gate drive requirements allowing operation
in 1.5V circuits
Battery management
Load switch
Very small package outline SC70-6
RoHS Compliant
S
D
D
D
D
D
G
S
D
G
D
D
SC70-6
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TJ, TSTG
Units
V
±8
V
-2.6
-Pulsed
PD
Ratings
-20
-9
Power Dissipation
(Note 1a)
0.75
Power Dissipation
(Note 1b)
0.48
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
170
RθJA
Thermal Resistance, Junction to Ambient Single operation
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.32
Device
FDG332PZ
©2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
Package
SC70-6
1
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDG332PZ P-Channel PowerTrench® MOSFET
July 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-20
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±8V, VDS= 0V
V
-13
mV/°C
-1
µA
±10
µA
-1.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
2.5
VGS = -4.5V, ID = -2.6A
73
95
VGS = -2.5V, ID = -2.2A
90
115
VGS = -1.8V, ID = -1.9A
117
160
VGS = -1.5V, ID = -1.0A
147
330
VGS = -4.5V, ID = -2.6A , TJ = 125°C
100
133
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.4
VDD = -5V, ID = -2.6A
-0.7
mV/°C
9
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10V, VGS = 0V, f = 1MHZ
420
560
pF
85
115
pF
75
115
pF
5.2
10
ns
4.8
10
ns
59
95
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
28
45
ns
Qg
Total Gate Charge
7.6
10.8
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10V, ID = -2.6A,
VGS = -4.5V, RGEN = 6Ω
VGS = -4.5V, VDD = -10V, ID = -2.6A
0.9
nC
1.9
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -0.6A
IF = 2.6A, di/dt = 100A/µs
-0.6
(Note 2)
A
-0.7
-1.2
V
28
45
ns
8
13
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 170°C/W when mounted on
a 1 in2 pad of 2 oz copper .
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
2
www.fairchildsemi.com
FDG332PZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
9
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
2.5
VGS = -4.5V
VGS = -3V
VGS = -2.5V
6
VGS = -1.8V
3
VGS = -1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0.0
0.4
0.8
1.2
1.6
2.0
VGS = -1.5V
2.0
VGS = -1.8V
1.5
VGS = -2.5V
1.0
0.5
0
3
Figure 1. On-Region Characteristics
rDS(on), DRAIN TO
1.2
1.0
0.8
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
300
ID = -2.6A
VGS = -4.5V
-25
200
TJ = 125oC
150
100
TJ = 25oC
1
2
3
4
5
Figure 4. On-Resistance vs Gate to
Source Voltage
-IS, REVERSE DRAIN CURRENT (A)
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
250
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-VGS, GATE TO SOURCE VOLTAGE (V)
9
VDD = -5V
3
TJ = 150oC
0
0.0
ID = -2.6A
50
150
Figure 3. Normalized On - Resistance
vs Junction Temperature
6
9
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
0.6
-50
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
VGS = -4.5V
VGS = -3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ =
25oC
TJ = -55oC
0.5
1.0
1.5
2.0
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
VGS = 0V
1
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDG332PZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
1000
Ciss
ID = -2.6A
VDD = -5V
3.0
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
4.5
VDD = -10V
VDD = -15V
1.5
Coss
100
0.0
0
2
4
6
30
0.1
8
1
20
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
5
10
10
100us
-Ig, GATE LEAKAGE CURRENT(uA)
-ID, DRAIN CURRENT (A)
Crss
f = 1MHz
VGS = 0V
1ms
1
10ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
1s
10s
DC
RθJA = 260oC/W
TA = 25oC
0.01
0.1
1
4
3
10
2
10
50
TJ = 150oC
1
10
0
10
-1
10
TJ = 25oC
-2
10
-3
10
-4
10
10
VGS = 0V
10
0
5
10
15
20
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
P(PK), PEAK TRANSIENT POWER (W)
VGS = -4.5V
10
SINGLE PULSE
o
RθJA = 260 C/W
o
TA = 25 C
1
0.1
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
Figure 11.
©2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
Transient Thermal Response Curve
4
www.fairchildsemi.com
FDG332PZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA + TA
SINGLE PULSE
o
RθJA = 260 C/W
0.01
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
5
www.fairchildsemi.com
FDG332PZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data
will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at any
time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has
been discontinued by Fairchild Semiconductor.The datasheet
is printed for reference information only.
Rev. I29
©2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDG332PZ P-Channel PowerTrench® MOSFET
tm