FDMC86139P

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) Pin 1 SS -100 V, -15 A, 67 mW FDMC86139P DD D This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. D Bottom Top General Description SG WDFN8 3.3x3.3, 0.65P CASE 511DH MARKING DIAGRAM Features • Max rDS(on) = 67 mW at VGS = −10 V, ID = −4.4 A • Max rDS(on) = 89 mW at VGS = −6 V, ID = −3.6 A • Very Low RDS−On Mid Voltage P Channel Silicon Technology • • • Optimised for Low Qg This Product is Optimised for Fast Switching Applications as well as Load Switch Applications 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant Applications FDMC 86139P &Z&K&2 FDMC 86139P &Z &K &2 = Specific Device Code = Specific Device Code = Assembly Location = Lot Run Traceability Code = Date Code (Year and Week) • Active Clamp Switch • Load Switch PIN ASSIGNMENT S 1 8 D S 2 7 D S 3 6 D G 4 5 D P−Channel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2013 January, 2022 − Rev. 3 1 Publication Order Number: FDMC86139P/D FDMC86139P MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±25 V A ID Parameter Drain Current Continuous TC = 25°C −15 Continuous (Note 1a) TA = 25°C −4.4 Pulsed −30 EAS Single Pulse Avalanche Energy (Note 3) 121 mJ PD Power Dissipation TC = 25°C 40 W Power Dissipation (Note 1a) TA = 25°C 2.3 TJ, TSTG Operating and Storage Junction Temperature Range −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit °C/W RqJC Thermal Resistance, Junction to Case 3.1 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 53 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. Starting TJ = 25°C; P−ch: L = 3 mH, IAS = −9 A, VDD = −100 V, VGS = −10 V. 100% test al L = 0.1 mH, IAS = −28 A www.onsemi.com 2 FDMC86139P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit −100 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V DBV DSS Breakdown Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C − −63 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = −80 V, VGS = 0 V − − −1 mA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V − − ±100 nA DT J ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA −2 −3 −4 V DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C − 7 − mV/°C Static Drain to Source On Resistance VGS = −10 V, ID = −4.4 A − 56 67 mW VGS = −6 V, ID = −3.6 A − 69 89 VGS = −10 V, ID = −4.4 A, TJ = 125°C − 87 104 VDS = −10 V, ID = −4.4 A − 12 − S VDS = −50 V, VGS = 0 V, f = 1 MHz − 1001 1335 pF − 178 240 pF DT J rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance − 10 15 pF 0.1 1.6 3.2 W − 11 20 ns − 2.5 10 ns − 17 30 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(TOT) Turn−On Delay Time Rise Time VDD = −50 V, ID = −4.4 A, VGS = −10 V, RGEN = 6 W Turn−Off Delay Time Fall Time Total Gate Charge Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge − 4 10 ns VDD = −50 V, ID = −4.4 A, VGS = 0 V to −10 V − 16 22 nC VDD = −50 V, ID = −4.4 A, VGS = 0 V to −6 V − 9.8 14 VDD = −50 V, ID = −4.4 A − 4.5 − nC − 3.2 − nC V DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = −4.4 A (Note 2) − −0.84 −1.3 VGS = 0 V, IS = −1.9 A (Note 2) − −0.79 −1.2 trr Reverse Recovery Time IF = −4.4 A, di/dt = 100 A/ms − 70 112 ns Qrr Reverse Recovery Charge − 141 225 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FDMC86139P TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = −10 V VGS = −6 V VGS = −5.5 V 20 VGS = −5 V 10 0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VGS = −4.5 V 0 1 2 3 4 5 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE −ID, DRAIN CURRENT (A) 30 VGS = −4.5 V VGS = −5.5 V 3 VGS = −6 V 2 1 0 5 0 10 250 ID = −4.4 A VGS = −10 V rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 2.0 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 200 ID = −4.4 A 150 TJ = 125°C 100 50 0 100 125 150 TJ = 25°C 4 −IS, REVERSE DRAIN CURRENT (A) VDS = −5 V TJ = 150°C 10 TJ = 25°C TJ = −55°C 2 3 4 5 6 7 8 9 10 Figure 4. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 20 6 5 −VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature 30 30 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage TJ, JUNCTION TEMPERATURE (°C) −ID, DRAIN CURRENT (A) 20 −ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.8 VGS = −10 V PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX −VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = −5 V 4 7 50 VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 −VSD, BODY DIODE FORWARD VOLTAGE (V) −VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 FDMC86139P 10 ID = −4.4 A 2000 1000 VDD = −50 V 8 CAPACITANCE (pF) −VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) VDD = −25 V 6 VDD = −75 V 4 2 0 0 4 8 12 CISS COSS 100 10 1 16 0.1 Qg, GATE CHARGE (nC) −ID, DRAIN CURRENT (A) −IAS, AVALANCHE CURRENT (A) 100 20 TJ = 25°C TJ = 100°C 10 TJ = 125°C 1 0.001 0.01 0.1 1 15 5 RqJC = 3.1°C/W 0 P(PK), PEAK TRANSIENT POWER (W) 100 ms 1 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RqJA = 125°C/W CURVE BENT TO TA = 25°C MEASURED DATA 0.1 1 10 50 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 40 1 25 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability 10 LIMITED BY PACKAGE VGS = −6 V 50 10 VGS = −10 V 10 tAV, TIME IN AVALANCHE (ms) −ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs. Drain to Source Voltage 50 0.01 0.005 1 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 0.1 CRSS f = 1 MHz VGS = 0 V 10 ms 100 ms 1s 10 s DC 100 400 2000 1000 100 10 1 0.5 −VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE RqJA = 125°C/W TA = 25°C 10−4 10−3 10−2 10−1 1 10 100 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1000 FDMC86139P 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) t1 t2 0.01 ZqJA(t) = r(t) × RqJA RqJA = 125°C/W Peak TJ = PDM × ZqJA(t) + TA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0005 −4 10 −3 10 −2 10 −1 0 10 10 t, RECTANGULAR PULSE DURATION (s) 10 1 10 2 10 3 Figure 13. Junction−to−Ambient Transient Thermal Response Curve ORDERING INFORMATION Device FDMC86139P Device Marking Package Type Reel Size Tape Width Shipping† FDMC86139P WDFN8 3.3x3.3, 0.65P Power 33 (Pb−Free) 13” 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O 0.05 C 3.30 DATE 31 JUL 2016 B A 8 2X (3.40) 2.37 5 0.45(4X) 2.15 3.30 (1.70) (0.40) KEEP OUT AREA (0.65) 0.70(4X) PIN#1 IDENT 0.10 C 0.05 C TOP VIEW 0.65 2X 1 4 1.95 0.75±0.05 0.42(8X) RECOMMENDED LAND PATTERN 0.15±0.05 0.08 C 0.025±0.025 NOTES: C SIDE VIEW SEATING PLANE A. DOES NOT CONFORM TO JEDEC REGISTRATION MO−229 B. DIMENSIONS ARE IN MILLIMETERS. 3.30±0.05 2.27±0.05 PIN #1 IDENT 1 (0.79) C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. (0.50)4X D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 4 0.50±0.05 (4X) (0.35) (1.15) 3.30±0.05 R0.15 2.00±0.05 0.30±0.05 (3X) 8 5 0.65 1.95 0.35±0.05 (8X) 0.10 C A B 0.05 C BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13625G WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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