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FDMC86261P
P-Channel PowerTrench® MOSFET
-150 V, -9 A, 160 mΩ
Features
General Description
Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
This product is optimised for fast switching applications as
well as load switch applications
Applications
Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
Active Clamp Switch
100% UIL Tested
Load Switch
RoHS Compliant
Top
Bottom
Pin 1
S
D
D
D
S
S
G
S
D
S
D
S
D
G
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±25
V
(Note 1a)
-2.7
A
-20
Single Pulse Avalanche Energy
PD
Units
V
-9
-Pulsed
EAS
Ratings
-150
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
121
40
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to + 150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3.1
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC86261P
Device
FDMC86261P
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
Package
Power 33
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC86261P P-Channel PowerTrench® MOSFET
June 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -120 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
±100
nA
-4
V
-150
V
-132
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
VGS = -10 V, ID = -2.4 A
130
160
rDS(on)
Static Drain to Source On Resistance
VGS = -6 V, ID = -2.2 A
141
185
VGS = -10 V, ID = -2.4 A,TJ = 125 °C
218
269
gFS
Forward Transconductance
-2
-3
6
VDS = -10 V, ID = -2.4 A
mV/°C
9
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -75 V, VGS = 0 V,
f = 1 MHz
0.1
1021
1360
87
120
pF
pF
4.7
10
pF
1.7
3.4
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
11
20
ns
tr
Rise Time
2.4
10
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
VGS = 0 V to -10 V
Qg(TOT)
Total Gate Charge
VGS = 0 V to -6 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -75 V, ID = -2.4 A,
VGS = -10 V, RGEN = 6 Ω
VDD = -75 V,
ID = -2.4 A
18
33
ns
9.2
20
ns
17
24
nC
11
16
nC
4.2
nC
3.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2.4 A
(Note 2)
-0.81
-1.3
V
VGS = 0 V, IS = -1.9 A
(Note 2)
-0.80
-1.2
V
IF = -2.4 A, di/dt = 100 A/μs
81
130
ns
197
315
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper
a) 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -9 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -28 A.
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
2
www.fairchildsemi.com
FDMC86261P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
4
VGS = -10 V
VGS = -5.5 V
VGS = -6 V
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
15
VGS = -5 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
5
VGS = -4.5 V
0
0
1
2
3
4
VGS = -4.5 V
3
VGS = -5 V
2
VGS = -5.5 V
1
0
0
5
5
Figure 1. On Region Characteristics
15
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
500
ID = -2.4 A
VGS = -10V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
2.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
400
ID = -2.4 A
300
TJ = 125 oC
200
TJ = 25 oC
100
0
-50
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
5
6
7
8
9
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
-IS, REVERSE DRAIN CURRENT (A)
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
VGS = -10V
VGS = -6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
VDS = -10 V
TJ = 150 oC
10
TJ = 25 oC
5
TJ = -55 oC
0
2
3
4
5
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
6
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
3
1.2
www.fairchildsemi.com
FDMC86261P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = -2.4 A
VDD = -75 V
8
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = -100 V
VDD = -50 V
6
4
Ciss
1000
Coss
100
Crss
10
2
f = 1 MHz
VGS = 0 V
0
0
4
8
12
16
1
0.1
20
1
Figure 7. Gate Charge Characteristics
12
o
-ID, DRAIN CURRENT (A)
-IAS, AVALANCHE CURRENT (A)
100
Figure 8. Capacitance vs Drain
to Source Voltage
50
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01
0.1
1
RθJC = 3.1 C/W
9
VGS = -6 V
3
0
25
10 20
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
30
P(PK), PEAK TRANSIENT POWER (W)
1000
10
100 μs
1
0.1
VGS = -10 V
Limited by Package
6
tAV, TIME IN AVALANCHE (ms)
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
RθJA = 125 oC/W
o
0.01 TA = 25 C
0.005
0.1
1s
CURVE BENT TO
MEASURED DATA
1
10
10 s
DC
100
500
-VDS, DRAIN to SOURCE VOLTAGE (V)
TA = 25 oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
SINGLE PULSE
RθJA = 125 oC/W
4
www.fairchildsemi.com
FDMC86261P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
0.01
0.001
-4
10
ZθJA(t) = r(t) x RθJA
RθJA = 125 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
SINGLE PULSE
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
5
www.fairchildsemi.com
FDMC86261P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC86261P P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2013 Fairchild Semiconductor Corporation
FDMC86261P Rev.C3
7
www.fairchildsemi.com
FDMC86261P P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
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®*
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DEUXPEED®
™
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Marking Small Speakers Sound Louder
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Saving our world, 1mW/W/kW at a time™
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and Better™
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仙童 ™
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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