FDMC8884_F126

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This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 15 9.0 40 24 18 2.3 -55 to +150 Units V V A mJ W °C Thermal Characteristics R R JC Thermal Resistance, Junction to Case JA Thermal Resistance, Junction to Ambient 6.6 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET June 2014 Symbol TJ = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250 A, VGS = 0 V 30 ID = 250 A, referenced to 25 °C V 22 VDS = 24 V, VGS = 0 V TJ = 125 °C VGS = ±20 V, VDS = 0 V mV/°C 1 250 ±100 nA 2.5 V A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 A 1.4 1.9 ID = 250 A, referenced to 25 °C -6 VGS = 10 V, ID = 9.0 A VGS = 4.5 V, ID = 7.2 A VGS = 10 V, ID = 9.0 A, TJ = 125 °C VDD = 5 V, ID = 9.0 A 16 22 22 24 19 30 30 513 110 76 1.4 685 150 115 2.1 pF pF pF 6 2 15 2 10 5.0 1.8 2.2 12 10 27 10 14 7.0 ns ns ns ns nC nC nC nC 0.86 0.76 13 3 1.2 1.2 18 10 mV/°C m S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain “Miller” Charge VDD = 15 V, ID = 9.0 A, VGS = 10 V, RGEN = 6 VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 9.0 A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.0 A VGS = 0 V, IS = 1.6 A (Note 2) (Note 2) IF = 9.0 A, di/dt = 100 A/ s V ns nC NOTES: 1. R JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. 3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, I AS = 4 A . ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 2 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Electrical Characteristics VGS = 10 V 4.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 TJ = 25 °C unless otherwise noted VGS = 4 V VGS = 4.5 V VGS = 6 V 20 VGS = 3.5 V 10 0 VGS = 3 V 0 1 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 0.8 -50 -25 0 25 50 75 1.0 0.5 100 125 150 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25 oC 3 4 VGS, GATE TO SOURCE VOLTAGE (V) ID = 9.0 A PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 50 40 TJ = 125 oC 30 20 TJ = 25 oC 2 4 6 8 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 40 100 TJ = -55 oC 1 30 Figure 4. On-Resistance vs Gate to Source Voltage 20 0 10 20 ID, DRAIN CURRENT (A) VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 10 0 60 TJ, JUNCTION TEMPERATURE (oC) TJ = 150 oC VGS = 10 V VGS = 6 V 70 10 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 30 VGS = 4.5 V 1.5 Figure 3. Normalized On- Resistance vs Junction Temperature 40 VGS = 4 V 2.0 80 1.2 0.6 -75 VGS = 3.5 V 2.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 9.0 A VGS = 10 V 1.4 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 3.0 Figure 1. On-Region Characteristics 1.6 VGS = 3 V 3.5 3 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 9.0 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15V 6 VDD = 10 V VDD = 20 V 4 2 0 Coss 100 0 3 6 9 50 0.1 12 1 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 10 TJ = 25 oC TJ = 100 oC 20 VGS = 10 V 10 Limited by Package TJ = 125 oC 1 0.01 0.1 R 1 10 6.6 C/W 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 10 P(PK), PEAK TRANSIENT POWER (W) 100 100 us 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED R JA = 125 o 1s 10 s C/W DC o 0.01 0.01 VGS = 4.5 V o JC = 0 25 tAV, TIME IN AVALANCHE (ms) 0.1 30 Figure 8. Capacitance vs Drain to Source Voltage 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V TA = 25 C 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 SINGLE PULSE o R JA = 125 C/W VGS = 10V 100 o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (s) 100 10 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TJ = 25 °C unless otherwise noted 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: Z JA(t) = r(t) x R JA R JA = 125 °C/W Peak TJ = PDM x Z JA(t) + TA Duty Cycle, D = t1 / t2 0.01 0.001 -4 10 SINGLE PULSE -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 5 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Typical Characteristics 2X 3.30 0.05 C B A 8 (3.40) 2.37 5 0.45(4X) 2.15 (1.70) 3.30 (0.40) (0.65) KEEP OUT AREA 0.70(4X) PIN#1 IDENT 0.05 C TOP VIEW 2X 0.65 1 4 1.95 0.42(8X) RECOMMENDED LAND PATTERN 0.10 C 0.08 C SIDE VIEW SEATING PLANE NOTES: C A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. 2.27+0.05 PIN #1 IDENT 1 (0.79) (0.50)4X D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 4 (0.35) (1.15) R0.15 8 0.65 5 1.95 BOTTOM VIEW C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. 0.10 0.05 C A B C E. DRAWING FILENAME: MKT-MLP08Srev3. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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