FDMC8884

FDMC8884 N-Channel Power Trench® MOSFET May 2008 FDMC8884 N-Channel Power Trench 30V, 15A, 19mΩ Features Max rDS(on) = 19mΩ at VGS = 10V, ID = 9.0A Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.2A High performance trchnology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant ® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 15 24 9.0 40 24 18 2.3 -55 to +150 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.6 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 Package Power 33 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDMC8884 Rev.C 1 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 30 22 1 250 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 9.0A VGS = 4.5V, ID = 7.2A VGS = 10V, ID = 9.0A, TJ = 125°C VDD = 5V, ID = 9.0A 1.2 1.9 -6 16 22 22 24 19 30 30 S mΩ 2.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 513 110 76 1.4 685 150 115 2.1 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V ID = 9.0A VDD = 15V, ID = 9.0A, VGS = 10V, RGEN = 6Ω 6 2 15 2 10 5.0 1.8 2.2 12 10 27 10 14 7.0 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 9.0A VGS = 0V, IS = 1.6A IF = 9.0A, di/dt = 100A/µs (Note 2) (Note 2) 0.86 0.76 13 3 1.2 1.2 18 10 V ns nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L = 1mH, IAS = 7A, VDD = 30V, VGS = 10V. FDMC8884 Rev.C 2 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 40 VGS = 4.5V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4V 4 VGS = 3.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 30 VGS = 6V 3 VGS = 4V VGS = 4.5V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2 10 VGS = 3.5V 1 VGS = 6V VGS = 10V 0 0.0 0 0 10 20 ID, DRAIN CURRENT(A) 30 40 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 ID = 9.0A VGS = 10V 60 ID = 9.0A rDS(on), DRAIN TO 40 TJ = 125oC 20 TJ = 25oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 60 10 VGS = 0V ID, DRAIN CURRENT (A) 30 VDS = 5V 1 TJ = 150oC TJ = 25oC 20 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 10 TJ = -55oC 0.01 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8884 Rev.C 3 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 9.0A 1000 8 6 VDD = 20V VDD = 15V VDD = 10V CAPACITANCE (pF) Ciss 4 2 0 0 3 6 Qg, GATE CHARGE(nC) Coss 100 f = 1MHz VGS = 0V Crss 9 12 50 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 25 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 TJ = 25oC 20 VGS = 10V 15 Limited by Package TJ = 100oC TJ = 125oC 10 VGS = 4.5V 5 RθJC = 6.6 C/W o 1 0.01 0.1 1 10 100 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 60 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25oC ID, DRAIN CURRENT (A) 10 100µs 1ms 1 THIS AREA IS LIMITED BY rDS(on) 10 10ms 100ms 1s 10s DC 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 C/W TA = 25oC o 1 0.5 -3 10 10 -2 0.01 0.01 0.1 1 10 100 10 -1 10 0 10 1 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC8884 Rev.C 4 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE RθJA = 125 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 -3 10 10 -2 10 -1 10 0 10 1 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8884 Rev.C 5 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC8884 Rev.C 6 www.fairchildsemi.com FDMC8884 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMC8884 Rev.C 7 www.fairchildsemi.com