FDMC8884

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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC8884 N-Channel PowerTrench® MOSFET 30 V, 15 A, 19 mΩ Features General Description „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant Application „ High side in DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 9.0 A 40 Single Pulse Avalanche Energy PD Units V 15 -Pulsed EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 24 18 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 6.6 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 30 V 22 VDS = 24 V, VGS = 0 V mV/°C 1 TJ = 125 °C 250 VGS = ±20 V, VDS = 0 V μA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.4 1.9 -6 mV/°C VGS = 10 V, ID = 9.0 A 16 19 VGS = 4.5 V, ID = 7.2 A 22 30 VGS = 10 V, ID = 9.0 A, TJ = 125 °C 22 30 VDD = 5 V, ID = 9.0 A 24 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 513 685 pF 110 150 pF 76 115 pF 1.4 2.1 Ω 6 12 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 9.0 A, VGS = 10 V, RGEN = 6 Ω 2 10 ns 15 27 ns 2 10 ns Total Gate Charge VGS = 0 V to 10 V 10 14 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 9.0 A 5.0 7.0 1.8 nC 2.2 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.0 A (Note 2) 0.86 1.2 VGS = 0 V, IS = 1.6 A (Note 2) 0.76 1.2 IF = 9.0 A, di/dt = 100 A/μs V 13 18 ns 3 10 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A . ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 2 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 30 VGS = 4 V VGS = 4.5 V VGS = 6 V 20 VGS = 3.5 V 10 VGS = 3 V 0 0 1 2 3.0 VGS = 3.5 V 2.0 VGS = 4.5 V 1.5 1.0 VGS = 10 V VGS = 6 V 0.5 3 0 Figure 1. On-Region Characteristics 10 20 ID, DRAIN CURRENT (A) 30 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 80 ID = 9.0 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4 V 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 9.0 A 70 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 50 40 TJ = 125 oC 30 20 TJ = 25 oC -50 -25 0 25 50 75 10 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V 3.5 30 VDS = 5 V 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 4 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 9.0 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15V 6 VDD = 10 V VDD = 20 V 4 Coss 100 2 Crss f = 1 MHz VGS = 0 V 50 0.1 0 0 3 6 9 12 1 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 10 TJ = 25 oC TJ = 100 oC 20 VGS = 10 V 10 Limited by Package TJ = 125 oC 1 0.01 0.1 o 1 10 50 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 10 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 us 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s o RθJA = 125 C/W 0.01 0.01 VGS = 4.5 V RθJC = 6.6 C/W 0 25 tAV, TIME IN AVALANCHE (ms) 0.1 30 Figure 8. Capacitance vs Drain to Source Voltage 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) DC TA = 25 oC 0.1 1 10 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 SINGLE PULSE RθJA = 125 oC/W VGS = 10V 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZθJA(t) = r(t) x RθJA 0.01 0.001 -4 10 SINGLE PULSE -3 10 RθJA = 125 °C/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E4 5 www.fairchildsemi.com FDMC8884 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3.30 0.05 C B A 2X 8 (3.40) 2.37 5 0.45(4X) 2.15 (1.70) 3.30 (0.40) KEEP OUT AREA (0.65) 0.70(4X) PIN#1 IDENT 0.05 C TOP VIEW 0.65 2X 1 4 0.42(8X) 1.95 RECOMMENDED LAND PATTERN 0.10 C 0.08 C NOTES: C SIDE VIEW SEATING PLANE A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. 2.27+0.05 PIN #1 IDENT (0.50)4X (0.79) 1 C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 4 E. DRAWING FILENAME: MKT-MLP08Srev3. (0.35) (1.15) R0.15 8 0.65 5 1.95 BOTTOM VIEW 0.10 0.05 C A B C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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