FDMD8630

FDMD8630 MOSFET – N-Channel, POWERTRENCH), Dual 30 V, 167 A, 1.0 mW General Description This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density. www.onsemi.com Top Bottom Pin 1 G1 Features • • • • • • • D1 D1 S1 / S2 Common Source Configuration to Eliminate PCB Routing Large Source Pad on Bottom of Package for Enhanced Thermals Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A Ideal for Flexible Layout in Secondary Side Synchronous Rectification 100% UIL Tested This Device is Pb−Free and is RoHS Compliant D2 D2 D2 D1 G2 PQFN8 5X6, 1.27P CASE 483AS MARKING DIAGRAM $Y&Z&3&K Applications FDMD • Isolated DC−DC Synchronous Rectifiers • Common Ground Load Switches 8630 &Y &Z &3 &K FDMD8630 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code PIN CONFIGURATION G1 1 8 D2 D1 2 7 D2 D1 3 6 D2 D1 4 5 G2 S1,S2 to backside ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 July, 2019 − Rev. 2 1 Publication Order Number: FDMS3604S/D FDMD8630 MOSFET MAXIMUM RATINGS TA = 25°C Unless Otherwise Noted Parameter Symbol Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current −Continuous − TC = 25°C (Note 5) 167 −Continuous − TC =100°C (Note 5) 106 −Continuous − TA = 25°C (Note 1a) 38 ID EAS PD TJ, TSTG A −Pulsed − (Note 4) 1178 Single Pulse Avalanche Energy (Note 3) 726 mJ Power Dissipation for Single Operation TC = 25 °C 43 W Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.3 Operating and Storage Junction Temperature Range −55 to +150 °C Ratings Unit °C/W THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case 2.9 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 55 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMD8630 FDMD8630 Power 5 x 6 13” 12 mm 3000 Units ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 30 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS= 0 V 100 nA 3.0 V 15 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C −6 Static Drain to Source On Resistance VGS = 10 V, ID = 38 A 0.6 1.0 VGS = 4.5 V, ID = 33 A 0.8 1.3 VGS = 4.5 V, ID = 33 A, TJ = 125°C 0.9 1.5 VDD = 5 V, ID = 38 A 281 VDS = 15 V, VGS = 0 V, f = 1 MHz rDS(on) gFS Forward Transconductance 1.0 1.6 mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance 7090 9930 pF Coss Output Capacitance 2025 2835 pF Crss Reverse Transfer Capacitance 212 300 pF 1.9 3.8 W Rg Gate Resistance 0.1 SWITCHING CHARACTERISTICS www.onsemi.com 2 FDMD8630 ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) Parameter Symbol Test Conditions Min Typ Max Units 14 26 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf VDD = 15 V, ID = 38 A VGS = 10 V, RGEN = 6 W Turn−On Delay Time Rise Time 15 27 ns Turn−Off Delay Time 66 105 ns Fall Time 24 39 ns 97 142 nC 46 74 nC Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 38 A Qgs Gate to Source Gate Charge 17 nC Qgd Gate to Drain “Miller” Charge 12 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 38 A (Note 2) 0.8 VSD 1.3 V Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.7 1.2 V trr Reverse Recovery Time IF = 38 A, di/dt = 100 A/ms 64 103 ns Qrr Reverse Recovery Charge 56 90 nC 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJA is guaranteed by design while RqCA is determined by the user’s board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 55°C/W when mounted on a 1 in2 padof 2 oz copper SS SF DS DF G SS SF DS DF G 2. 3. 4. 5. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 726 mJ is based on starting TJ = 25°C, L = 3 mH, IAS = 22 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 70 A. Pulsed Id please refer to Fig 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. www.onsemi.com 3 FDMD8630 TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted 200 ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 4 V 150 VGS = 3.5 V 100 VGS = 3 V 50 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.1 1.0 0.9 0.8 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( oC) 125 SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON− RESISTANCE 1.2 80 120 160 200 120 TJ = 150 o C 80 TJ = 25oC 40 TJ = -55 oC 2 3 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 4 TJ = 25 o C 2 2 4 TJ = 125 oC 6 8 10 Figure 4. On−Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 1 0 6 0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 0 VGS = 4 V VGS = 4.5 V VGS = 10 V ID = 38 A 150 200 0 1 8 Figure 3. Normalized On Resistance vs Junction Temperature 160 VGS = 3.5 V 2 10 1.3 -50 3 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage 1.4 0.7 -75 VGS = 3 V 4 ID , DRAIN CURRENT (A) ID = 38 A VGS = 10 V 1.5 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 5 0.8 Figure 1. On−Region Characteristics 1.6 6 NORMALIZED DRAIN TO SOURCE ON− RESISTANCE VGS = 10 V 200 100 10 TJ = 150 oC 1 TJ = 25oC 0.1 TJ = -55 o C 0.01 0.001 0.0 4 VGS = 0 V VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDMD8630 TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) 10 10000 VGS, GATE TO SOURCE VOLTAGE (V) ID = 38 A C iss 8 CAPACITANCE (pF) VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 2 0 0 20 40 60 80 C oss 1000 f = 1 MHz VGS = 0 V 100 10 30 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 200 100 160 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC TJ = 125oC 0.1 1 10 VGS = 10 V 120 TJ = 100 oC 10 1 0.01 100 80 VGS = 4.5 V 40 0 25 1000 RqJC = 2.9 o C/W tAV, TIME IN AVALANCHE (ms) 0.01 0.01 P(PK), PEAK TRANSIENT POWER (W) 10ms 100 0.1 100 125 150 o C) 100000 1000 1 75 Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 10 50 T , CASE TEMPERATURE ( Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) C rss 100 0.1 100 ms THIS AREA IS LIMITED BYrDS(on) SINGLE PULSE TJ = MAX RATED RqJC = 2.9 oC/W TC = 25 oC 0.1 1 ms 10 ms 100 ms CURVE BENT TO MEASURED DATA 1 10 100 200 SINGLE PULSE RqJC= 2.9 oC/W 10000 TC = 25 oC 1000 100 10 −5 10 VDS, DRAIN to SOURCE VOLTAGE (V) 10 −4 10 −3 10 −2 10 −1 1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDMD8630 TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 P DM t1 t2 NOTES: 0.01 0.001 −5 10 ZqJC (t) = r(t) x R qJC R qJC = 2.9 oC/W Peak TJ = PDM x Z qJC (t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10 −4 10 −3 10 −2 10 −1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AS ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13667G PQFN8 5X6, 1.27P DATE 17 MAY 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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