MOSFET - Complementary,
POWERTRENCH)
N−Channel: 20 V, 3.8 A, 66 mW
P−Channel: −20 V, −2.6 A, 142 mW
FDME1034CZT
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General Description
This device is designed specifically as a single package solution for
a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra−portable applications. It features an independent N−Channel &
P−Channel MOSFET with low on−state resistance for minimum
conduction losses. The gate charge of each MOSFET is also
minimized to allow high frequency switching directly from the
controlling device.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to switching and
linear mode applications.
Features
Q1: N−Channel
• Max rDS(on) = 66 mW at VGS = 4.5 V, ID = 3.4 A
• Max rDS(on) = 86 mW at VGS = 2.5 V, ID = 2.9 A
• Max rDS(on) = 113 mW at VGS = 1.8 V, ID = 2.5 A
• Max rDS(on) = 160 mW at VGS = 1.5 V, ID = 2.1 A
Q2: P−Channel
• Max rDS(on) = 142 mW at VGS = −4.5 V, ID = −2.3 A
• Max rDS(on) = 213 mW at VGS = −2.5 V, ID = −1.8 A
• Max rDS(on) = 331 mW at VGS = −1.8 V, ID = −1.5 A
• Max rDS(on) = 530 mW at VGS = −1.5 V, ID = −1.2 A
• Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
• Free from Halogenated Compounds and Antimony Oxides
• HBM ESD Protection Level > 1600 V (Note 3)
• This Device is Pb−Free and is RoHS Compliant
D2(P3)
G1(P2)
D2(P8)
S1
D1(P7)
Pin 1
S2(P4)
G2(P5)
D1(P6)
Bottom
Note: Center pad of P7 & P8 is a virtual
pin number. Actual P7 & P8 is connected
to edge pad of P6 & P3 respectively.
UDFN6 1.6x1.6, 0.5P
CASE 517DW
MARKING DIAGRAM
$Y&Z&2&K
5T
$Y
&Z
&2
&K
5T
Applications
• DC−DC Conversion
• Level Shifted Load Switch
Top
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
October, 2019 − Rev. 1
1
Publication Order Number:
FDME1034CZT/D
FDME1034CZT
MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted)
Symbol
Q1
Q2
Units
VDS
Drain to Source Voltage
20
−20
V
VGS
Gate to Source Voltage
±8
±8
V
3.8
−2.6
A
6
−6
ID
Parameter
Drain Current
−Continuous
TA = 25°C
(Note 1a)
−Pulsed
PD
TJ, TSTG
Power Dissipation for Single Operation TA = 25°C
(Note 1a)
1.4
Power Dissipation for Single Operation TA = 25°C
(Note 1b)
0.6
Operating and Storage Junction Temperature Range
W
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
90
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1b)
195
Units
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Shipping†
5T
FDME1034CZT
UDFN6 1.6x1.6, 0.5P (Pb−Free)
5000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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2
FDME1034CZT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Type
Min.
20
−20
Typ.
Max.
Units
OFF CHARACTERISTICS
Drain to Source Breakdown
Voltage
ID = 250 mA, VGS = 0 V
ID = −250 mA, VGS = 0 V
Q1
Q2
DBVDSS
DTJ
Breakdown Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25°C
ID = −250 mA, referenced to 25°C
Q1
Q2
IDSS
Zero Gate Voltage Drain
Current
VDS = 16 V, VGS = 0 V
VDS = −16 V, VGS = 0 V
Q1
Q2
1
−1
mA
IGSS
Gate to Source Leakage
Current
VGS = ±8 V, VDS = 0 V
All
±10
mA
1.0
−1.0
V
BVDSS
V
16
−12
mV/°C
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold
Voltage
VGS = VDS, ID = 250 mA
VGS = VDS, ID = −250 mA
Q1
Q2
DVGS(th)
DTJ
Gate to Source Threshold
Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
Q1
Q2
−3
2
Drain to Source On Resistance
VGS = 4.5 V, ID = 3.4 A
VGS = 2.5 V, ID = 2.9 A
VGS = 1.8 V, ID = 2.5 A
VGS = 1.5 V, ID = 2.1 A
VGS = 4.5 V, ID = 3.4 A, TJ = 125°C
Q1
55
68
85
106
76
66
86
113
160
112
VGS = −4.5 V, ID = −2.3 A
VGS = −2.5 V, ID = −1.8 A
VGS = −1.8 V, ID = −1.5 A
VGS = −1.5 V, ID = −1.2 A
VGS = −4.5 V, ID = −2.3 A , TJ = 125°C
Q2
95
120
150
190
128
142
213
331
530
190
VDS = 4.5 V, ID = 3.4 A
VDS = −4.5 V, ID = −2.3 A
Q1
Q2
9
7
rDS(on)
gFS
Forward Transconductance
0.4
−0.4
0.7
−0.6
mV/°C
mW
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Q1:
VDS = 10 V, VGS = 0 V, f = 1 MHz
Q1
Q2
225
305
300
405
pF
Coss
Output Capacitance
Q2:
VDS = −10 V, VGS = 0 V, f = 1 MHz
Q1
Q2
40
55
55
75
pF
Crss
Reverse Transfer Capacitance
Q1
Q2
25
50
40
75
pF
ns
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Turn−On Delay Time
Q1:
VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 W
Q1
Q2
4.5
4.7
10
10
Rise Time
Q2:
VDD = −10 V, ID = −1 A, VGS = −4.5 V,
RGEN = 6 W
Q1
Q2
2.0
4.8
10
10
Q1
Q2
15
33
27
53
Q1
Q2
1.7
16
10
29
4.2
7.7
Turn−Off Delay Time
Fall Time
Qg
Total Gate Charge
Q1:
VDD = 10 V, ID = 3.4 A, VGS = 4.5 V
Q1
Q2
3
5.5
Qgs
Gate to Source Gate Charge
Q2:
VDD = −10 V, ID = −2.3 A, VGS = −4.5 V
Q1
Q2
0.4
0.6
Qgd
Gate to Drain “Miller” Charge
Q1
Q2
0.6
1.4
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3
nC
FDME1034CZT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
Q1
Q2
0.7
−0.8
1.2
−1.2
V
DRAIN−SOURCE DIODE CHARACTERISTICS TJ = 25°C unless otherwise noted.
V
SD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 0.9 A
VGS = 0 V, IS = −0.9 A
t
Reverse Recovery Time
Q1:
IF = 3.4 A, Di/Dt = 100 A/ms
Q1
Q2
8.5
16
17
29
ns
Reverse Recovery Charge
Q2:
IF = −2.3 A, Di/Dt = 100 A/ms
Q1
Q2
1.4
4.4
10
10
nC
rr
Q
rr
(Note 2)
(Note 2)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJC is guaranteed
by design while RθCA is determined by the user’s board design.
b. 195 °C/W when mounted on
a minimum pad of 2 oz copper
a. 90 °C/W when mounted on
a 1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
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4
FDME1034CZT
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) TJ = 25°C unless otherwise noted.
VGS = 4.5 V
VGS = 3 V
VGS = 2.5 V
VGS = 1.8 V
4
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
6
VGS = 1.5 V
2
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
3.0
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
2.5
VGS = 1.5 V
2.0
VGS = 1.8 V
1.5
1.0
VGS = 4.5 V
0.5
1.5
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
2
300
ID = 3.4 A
VGS = 4.5 V
rDS(on) , DRAIN TO
1.4
1.2
1.0
0.8
SOURCE ON−RESISTANCE (mW)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
6
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
250
ID = 3.4 A
200
150
TJ = 125 oC
100
50
TJ = 25 oC
0.6
−75 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
0
1.0
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
TJ = 150 oC
2
TJ = 25 oC
TJ = −55oC
1.0
2.5
3.0
3.5
4.0
4.5
10
4
0.5
2.0
Figure 4. On−Resistance vs. Gate to
Source Voltage
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
0
0.0
1.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs. Junction
Temperature
ID, DRAIN CURRENT (A)
4
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
6
VGS = 3 V
VGS = 2.5 V
1.5
VGS = 0 V
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
TJ = −55oC
0.001
0.0
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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FDME1034CZT
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) TJ = 25°C unless otherwise noted.
500
ID = 3.4 A
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
VDD = 8 V
3.0
VDD = 10 V
VDD = 12 V
1.5
100
Coss
1
0.1
0.0
0
1
2
3
1
10
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
−1
10
10
Ig, GATE LEAKAGE CURRENT (A)
100 m s
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
10 s
DC
RqJA = 195 oC/W
TA = 25 oC
−2
VGS = 0 V
10
−3
10
−4
10
TJ = 125 oC
−5
10
−6
10
−7
10
−8
TJ = 25 oC
10
−9
0.01
0.1
1
10
10
50
0
3
6
9
12
15
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Gate Leakage Current vs.
Gate to Source Voltage
100
P(PK) , PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
SINGLE PULSE
o
RqJA = 195 C/W
o
TA = 25 C
10
1
0.5
−4
10
−3
10
−2
10
−1
10
11
0
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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6
100
1000
FDME1034CZT
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) TJ = 25°C unless otherwise noted.
2
NORMALIZED THERMAL
IMPEDANCE, ZqJA
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
0.01
0.005
−4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z qJA x R qJA + TA
o
RqJA = 195 C/W
−3
10
−2
10
−1
10
11
0
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
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100
1000
FDME1034CZT
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) TJ = 25°C unless otherwise noted.
VGS = -4.5 V
−I D, DRAIN CURRENT (A)
VGS = -3 V
3
VGS = -2.5 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
6
4
VGS = −1.8 V
2
VGS = −1.5 V
0
0
0.5
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
1.0
1.5
VGS = −1.5 V
2
VGS = −1.8 V
1
0
2.0
0
2
6
Figure 14. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
GS = −4.5 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
SOURCE ON−RESISTANCE (mW)
500
ID
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
4
−ID, DRAIN CURRENT (A)
Figure 13. On-Region Characteristics
0.6
−75 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( oC)
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
400
ID = −2.3 A
300
TJ = 125 oC
200
100
TJ = 25 oC
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Normalized On−Resistance
vs. Junction Temperature
Figure 16. On Resistance
vs. Gate to Source Voltage
6
10
−I S, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
−ID, DRAIN CURRENT (A)
VGS = -4.5 V
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
−VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS = −5 V
4
TJ = 150 oC
2
TJ = 25 oC
TJ = −55oC
0
0.0
VGS = -3 V
VGS = −2.5 V
0.5
1.0
1.5
VGS = 0 V
1
TJ = 150 oC
0.1
0.01
0.001
0.0
2.0
TJ = 25 oC
−VGS, GATE TO SOURCE VOLTAGE (V)
TJ = −55 oC
0.2
0.4
0.6
0.8
1.0
1.2
−VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode Forward Voltage
vs. Source Current
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FDME1034CZT
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) TJ = 25°C unless otherwise noted.
1000
ID = −2.3 A
Ciss
VDD = −8 V
CAPACITANCE (pF)
−VGS , GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = −10 V
1.5
VDD = −12 V
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
0.0
0
2
4
6
1
10
Figure 19. Gate Charge Characteristics
Figure 20. Capacitance vs. Drain to Source
Voltage
−1
10
10
−I g, GATE LEAKAGE CURRENT (A)
100 us
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
DC
R qJA = 195 C/W
o
o
TA = 25 C
0.01
0.1
1
10
−3
10
−4
10
TJ = 125 oC
−5
10
−6
10
−7
10
TJ = 25 oC
−8
10
−9
10
60
VDS = 0 V
−2
10
0
3
6
9
12
15
−VDS, DRAIN to SOURCE VOLTAGE (V)
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 21. Forward Bias Safe Operating Area
Figure 22. Gate Leakage Current
vs. Gate to Source Voltage
1000
P(PK) , PEAK TRANSIENT POWER (W)
20
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
−I D, DRAIN CURRENT (A)
Coss
SINGLE PULSE
o
RqJA = 195 C/W
100
o
TA = 25 C
10
1
0.3
−4
10
−3
10
−2
10
−1
10
1
10
t, PULSE WIDTH (s)
Figure 23. Single Pulse Maximum Power Dissipation
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100
1000
FDME1034CZT
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) TJ = 25°C unless otherwise noted.
2
NORMALIZED THERMAL
IMPEDANCE, ZqJA
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z qJA x R qJA + TA
SINGLE PULSE
o
RqJA = 195 C/W
0.001
−4
10
−3
10
−2
10
−1
10
11
0
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 24. Junction −to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517DW
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13701G
UDFN6 1.6x1.6, 0.5P
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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