FDME820NZT

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET General Description 20 V, 9 A, 18 mΩ Features „ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET „ Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A leadframe. „ Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A Applications „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Li-lon Battery Pack „ Free from halogenated compounds and antimony oxides „ Baseband Switch „ HBM ESD protection level >2.5 kV (Note3) „ Load Switch „ DC-DC Conversion „ RoHS Compliant G D Pin 1 D S D D D D G S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±12 V 9 A 40 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 70 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 190 °C/W Package Marking and Ordering Information Device Marking 8T Device FDME820NZT ©2012 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Package MicroFET 1.6x1.6 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units Publication Order Number: FDME820NZT/D FDME820NZT N-Channel PowerTrench® MOSFET FDME820NZT Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 μA 1.0 V 20 V 20 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -3 VGS = 4.5 V, ID = 9 A 14 18 VGS = 2.5 V, ID = 7.5 A 17 24 VGS = 1.8 V, ID = 7 A 26 32 VGS = 4.5 V, ID = 9 A , TJ = 125 °C 19 24 VDS = 10 V, VGS = 0 V, f = 1 MHz 865 pF 203 pF 190 pF 1.0 Ω rDS(on) Drain to Source On Resistance 0.5 0.8 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn-On Delay Time 9 ns tr Rise Time 5 ns td(off) Turn-Off Delay Time tf Fall Time VDD = 10 V, ID = 4 A VGS = 4.5 V, RGEN = 2 Ω 19 ns 5 ns Qg Total Gate Charge VDD = 4.2 V, ID = 3 A, VGS = 4.3 V 8.0 nC Qg Total Gate Charge VDD = 4.2 V, ID = 3 A, VGS = 4.5 V 8.5 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10 V, ID = 9 A 1.4 nC 3.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 9 A (Note 2) 0.8 1.2 IF = 9 A, di/dt = 100 A/us V V 18 ns 4 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 70 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 190 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDME820NZT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 40 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V VGS = 2.5 V 30 VGS = 1.8 V 20 VGS = 2 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 VGS = 1.5 V 0 0 0.5 1.0 1.5 2.0 4 VGS = 1.8 V VGS = 2 V 3 2 VGS = 3 V 0 2.5 Figure 1. On Region Characteristics VGS = 4.5 V 0 10 20 ID, DRAIN CURRENT (A) 40 80 ID = 9 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 ID = 9 A 40 TJ = 125 oC 20 TJ = 25 oC -50 -25 0 25 50 75 0 0.9 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.8 2.7 3.6 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1000 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 2.5 V 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 -75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 1.5 V VDS = 5 V 30 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 150 oC 10 TJ = 25 oC 1 0.1 TJ = -55 oC 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDME820NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 9 A 3.6 1000 VDD = 8 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 2.7 VDD = 10 V 1.8 VDD = 12 V Ciss Coss 0.9 0.0 f = 1 MHz VGS = 0 V 0 3 6 9 100 0.1 12 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage -1 20 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC -2 VGS = 0 V 10 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 -10 1 0.001 0.01 0.1 1 10 10 100 0 3 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) 100 us 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 100 ms 1s 10 s DC RθJA = 190 oC/W 0.01 0.01 12 15 18 1000 10 0.1 9 Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 1 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss TA = 25 oC 0.1 1 10 100 SINGLE PULSE RθJA = 190 oC/W 100 TA = 25 oC 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 FDME820NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 190 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDME820NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted www.onsemi.com 6 FDME820NZT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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