FDME430NT

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. „ Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A „ Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A Applications „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Li-lon Battery Pack „ Free from halogenated compounds and antimony oxides „ Baseband Switch „ RoHS Compliant „ Load Switch „ DC-DC Conversion G D Pin 1 D S D D D D G S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±12 V 6 30 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 175 °C/W Package Marking and Ordering Information Device Marking YA Device FDME430NT ©2012 Fairchild Semiconductor Corporation FDME430NT Rev.C3 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET October 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V 30 V 22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 0.6 0.8 -3 mV/°C VGS = 4.5 V, ID = 6 A 25 40 VGS = 2.5 V, ID = 5 A 29 51 VGS = 1.8 V, ID = 4 A 38 71 VGS = 4.5 V, ID = 6 A, TJ = 125 °C 34 54 VDS = 5 V, ID = 6 A 31 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 572 760 pF 74 100 pF 51 75 pF 7 14 ns 3 10 ns 19 34 ns 3.3 10 ns 6.5 9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 15 V, ID = 6 A, VGS = 4.5 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 6 A, VGS = 4.5 V nC 0.9 nC 1.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 6 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 V 12 22 ns 2.9 10 nC IF = 6 A, di/dt = 100 A/μs V Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 175 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. FDME430NT Rev.C3 2 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 30 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V VGS = 2.5 V 20 VGS = 1.8 V 10 VGS = 1.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VGS = 1.5 V 2 VGS = 1.8 V VGS = 2.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 2.0 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID = 6 A VGS = 4.5 V -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 6 A 80 TJ = 125 oC 40 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 30 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -75 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.4 VGS = 4.5 V VGS = 3 V VDS = 5 V 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0 0 1 2 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 3 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDME430NT Rev.C3 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 6 A Ciss VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = 15 V VDD = 20 V 1.5 Coss 100 Crss f = 1 MHz VGS = 0 V 10 0.1 0.0 0 2 4 6 8 1 Figure 7. Gate Charge Characteristics 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 10 100 us 1 1 ms 10 ms 100 ms 1s 10 s DC THIS AREA IS LIMITED BY rDS(on) 0.1 SINGLE PULSE TJ = MAX RATED 0.01 RθJA = 175 oC/W CURVE BENT TO MEASURED DATA TA = 25 oC 0.001 0.1 1 10 100 SINGLE PULSE RθJA = 175 oC/W TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 VDS, DRAIN to SOURCE VOLTAGE (V) 1 0.1 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJA 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 175 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve FDME430NT Rev.C3 4 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDME430NT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDME430NT Rev.C3 5 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2012 Fairchild Semiconductor Corporation FDME430NT Rev.C3 6 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ AccuPower™ Sync-Lock™ ® FRFET® AX-CAP®* ®* ® Global Power ResourceSM PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ Gmax™ QS™ CROSSVOLT™ TinyLogic® GTO™ Quiet Series™ CTL™ TINYOPTO™ IntelliMAX™ RapidConfigure™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ and Better™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ TranSiC™ MegaBuck™ EfficentMax™ SignalWise™ TriFault Detect™ MICROCOUPLER™ ESBC™ SmartMax™ TRUECURRENT®* MicroFET™ SMART START™ ® μSerDes™ MicroPak™ Solutions for Your Success™ ® ® MicroPak2™ SPM Fairchild MillerDrive™ STEALTH™ Fairchild Semiconductor® UHC® MotionMax™ SuperFET® FACT Quiet Series™ ® Ultra FRFET™ ® SuperSOT™-3 mWSaver FACT UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ ® ® VisualMax™ OPTOPLANAR SupreMOS FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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