FDMS36101L_F085

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS36101L_F085 N-Channel Power Trench® MOSFET 100V, 38A, 26mΩ Features „ Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 100 Units V ±20 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 38 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 101 A mJ Power Dissipation 94 W Derate above 25oC 0.63 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 1.6 oC/W 50 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDMS36101L Device FDMS36101L_F085 Package Power 56 Reel Size 13” Tape Width 12mm Quantity 3000 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.22mH, IAS = 30.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Fairchild Semiconductor Corporation FDMS36101L_F085 Rev. C1 1 www.fairchildsemi.com FDMS36101L_F085 N-Channel Power Trench® MOSFET June 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 100V, VGS = 0V 100 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) VGS = ±20V - - 1 mA - - ±100 nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 20A, VGS= 10V ID = 20A, VGS= 4.5V 1.0 1.84 3.0 V TJ = 25oC - 18 26 mΩ - 45 65 mΩ TJ = 25oC - 20 28 mΩ - 47 66 mΩ TJ = 175oC(Note 4) TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 25V, VGS = 0V, f = 1MHz VDD = 50V ID = 20A - 3945 - pF - 229 - pF - 111 - pF - 1.2 - Ω - 70 84 nC - 6.8 9 nC - 10.5 - nC 12 - nC Switching Characteristics ton Turn-On Time - - 24 ns td(on) Turn-On Delay Time - 15 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 7 - ns - 45 - ns Fall Time - 3 - ns Turn-Off Time - - 57 ns V VDD = 50V, ID = 20A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 20A, VGS = 0V - - 1.25 ISD = 10A, VGS = 0V - - 1.2 V IF = 20A, dISD/dt = 100A/μs, VDD=80V - 43 47 ns - 71 85 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDMS36101L_F085 Rev. C1 2 www.fairchildsemi.com FDMS36101L_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 50 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 40 CURRENT LIMITED BY SILICON 30 20 10 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: 175 - TC I = I2 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDMS36101L_F085 Rev. C1 3 www.fairchildsemi.com FDMS36101L_F085 N-Channel Power Trench® MOSFET Typical Characteristics 200 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10ms 100ms 50 TJ = -55oC 25 1 1 10 100 100 TJ = 175oC 0 0.1 Figure 6. Unclamped Inductive Switching Capability VDD = 5V TJ = 25oC 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 75 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 STARTING TJ = 25oC 10 1 0.001 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.01 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 100 80 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 80 60 40 20 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS5.5V 10V Top 8V 6V 5V 4.5V 4V Bottom 40 20 0 5 Figure 9. Saturation Characteristics FDMS36101L_F085 Rev. C1 60 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDMS36101L_F085 N-Channel Power Trench® MOSFET Typical Characteristics ID =20A 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 120 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 TJ = 175oC 60 40 20 o TJ = 25 C 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 2.4 2.0 1.6 1.2 ID = 20A VGS = 10V 0.8 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized Rdson vs Junction Temperature 1.5 1.1 0.9 1.0 0.6 0.9 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 Crss 10 f = 1MHz VGS = 0V 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs Drain to Source Voltage FDMS36101L_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 CAPACITANCE (pF) 2.8 10 ID = 20A VDD = 40V 8 VDD = 50V 6 VDD = 60V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDMS36101L_F085 N-Channel Power Trench® MOSFET Typical Characteristics tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 FDMS36101L_F085 Rev. C1 6 www.fairchildsemi.com FDMS36101L_F085 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* AX-CAP®* PowerTrench® FRFET® BitSiC™ Global Power ResourceSM PowerXS™ TinyBoost™ Build it Now™ Green Bridge™ Programmable Active Droop™ TinyBuck™ CorePLUS™ Green FPS™ QFET® TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® Quiet Series™ CROSSVOLT™ Gmax™ TINYOPTO™ RapidConfigure™ CTL™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ DEUXPEED® ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ EfficentMax™ SmartMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ μSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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