FDMS8320LDC

MOSFET – N-Channel, DUALCOOL ) DFN8, POWERTRENCH) 40 V, 192 A, 1.1 mW FDMS8320LDC www.onsemi.com Features • Max RDS(on) = 1.1 m at VGS = 10 V, ID = 44 A • Max RDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A • Advanced Package and Silicon Combination for Low RDS(on) and • • • • D Pin 1 DD D S High Efficiency Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery MSL1 Robust Package Design 100% UIL Tested This Device is Pb−Free, Halogen Free and RoHS Compliant G SS Top S Bottom Pin 1 DFN8 DUAL COOL CASE 506EG Applications • OringFET/Load Switching • Synchronous Rectification • DC−DC Conversion S 1 8 D S 2 7 D S 3 6 D G 4 5 D MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Unit VDSS Drain−to−Source Voltage 40 V VGS Gate−to−Source Voltage ±20 V ID Drain Current − Continuous TC = 25°C − Continuous TA = 25°C (Note 1a) − Pulsed (Note 4) A 192 44 300 EAS Single Pulse Avalanche Energy (Note 3) 661 mJ PD Power Dissipation, TC = 25°C 125 W Power Dissipation, TA = 25°C (Note 1a) 3.2 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ AWLYW 8320L 8320L = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2012 May, 2021 − Rev. 3 1 Publication Order Number: FDMS8320LDC/D FDMS8320LDC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage ID = 250 A, VGS = 0 V 40 − − V BVDSS/TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25°C − 22 − mV/°C IDSS Zero Gate Voltage Drain Corrent VDS = 32 V, VGS = 0 V − − 1 A IGSS Gate−to−Source Leakage Current VGS = ±20 V, VDS = 0 V − − 100 nA 1.0 1.6 3.0 V ON CHARACTERISTICS VGS(th) Gate−to−Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th)/TJ Gate−to−Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25°C − −6 − mV/°C Static Drain−to−Source On Resistance VGS = 10 V, ID = 44 A − 0.8 1.1 m VGS = 4.5 V, ID = 37 A − 1.1 1.5 VGS = 10 V, ID = 44 A, TJ = 125°C − 1.2 1.7 VDS = 5 V, ID = 44 A − 244 − S VDS = 20 V, VGS = 0 V, f = 1 MHz − 8310 11635 pF RDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 2255 3160 pF Crss Reverse Transfer Capacitance − 132 185 pF 0.1 1.4 2.6  − 19 34 ns − 15 27 ns − 69 110 ns Rg Gate Resistance f = 1 MHz SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time VDD = 20 V, ID = 44 A, VGS = 10 V, RGEN = 6  Turn−Off Delay Time − 14 25 ns Qg(ToT) Fall Time Total Gate Charge VGS = 0 to 10 V, VDD = 20 V, ID = 44 A − 121 170 nC Qg(ToT) Total Gate Charge VGS = 0 to 4.5 V, VDD = 20 V, ID = 44 A − 57 80 nC Qgs Gate−to−Source Charge VDD = 20 V, ID = 44 A − 21 − nC Qgd Gate−to−Drain “Miller” Charge VDD = 20 V, ID = 44 A − 16 − nC Source−to−Drain Diode Forward Voltage VGS = 0 V, IS = 2.6 A (Note 2) − 0.7 1.1 V VGS = 0 V, IS = 44 A (Note 2) − 0.8 1.2 V trr Reverse Recovery Time IF = 44 A, di/dt = 100 A/s − 65 104 ns Qrr Reverse Recovery Charge − 57 91 nC trr Reverse Recovery Time − 49 79 ns Qrr Reverse Recovery Charge − 89 143 nC DRAIN−SOURCE DIODE CHARACTERISTIC VSD IF = 44 A, di/dt = 300 A/s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FDMS8320LDC THERMAL CHARACTERISTICS Symbol Value Unit RθJC Thermal Resistance, Junction to Case (Top Source) Characteristic 2.9 °C/W RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 NOTES: 1. RJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RJC is guaranteed by design while RCA is determined by the user’s board design. b. 81°C/W when mounted on a minimum pad of 2 oz copper a. 38°C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. d. e. f. g. h. i. j. k. l. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 661 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 21 A, VDD = 40 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 66 A. 4. Pulse Id measured at 250 s, refer to Figure 11 SOA graph for more details. www.onsemi.com 3 FDMS8320LDC TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 7 300 Normalized Drain−to−Source On−Resistance ID, Drain Current (A) VGS = 10 V 240 VGS = 4.5 V 180 VGS = 4 V 120 VGS = 3 V VGS = 3.5 V 60 0 Pulse Duration = 80 s Duty Cycle = 0.5% Max 0 1 2 3 4 5 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 0 5 Pulse Duration = 80 s Duty Cycle = 0.5% Max 6 0 60 120 VDS, Drain−to−Source Voltage (V) 5 1.5 RDS(on), Drain−to−Source On−Resistance (mW) Normalized Drain−to−Source On−Resistance IDS = 44 A VGS = 10 V 1.6 1.4 1.3 1.2 1.1 1.0 0.9 4 ID = 44 A 3 2 TJ = 125°C 1 0 125 150 TJ = 25°C 300 100 IS, Reverse Drain Current VDS = 5 V 180 TJ = 150°C 120 TJ = 25°C TJ = −55°C 60 1 2 3 4 VGS, Gate−to Source Voltage (V) 4 6 8 10 Figure 4. On−Resistance vs. Gate−to−Source Voltage Pulse Duration = 80 s Duty Cycle = 0.5% Max 240 2 VGS, Gate−to−Source Voltage (V) Figure 3. Normalized On−Resistance vs. Junction Temperature 300 300 Pulse Duration = 80 s Duty Cycle = 0.5% Max 0.8 0.7 0 −75 −50 −25 25 50 75 100 TJ, Junction Temperature (5C) 240 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.7 ID, Drain Current (A) 180 ID, Drain Current (A) Figure 1. On−Region Characteristics 0 VGS = 10 V VGS = 4.5 V VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 TJ = −55°C 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 FDMS8320LDC TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) 10000 ID = 44 A Ciss 8 VDD = 15 V Capacitance (pF) VGS, Gate−to−Source Voltage (V) 10 6 VDD = 20 V 4 VDD = 25 V Coss 1000 100 Crss 2 0 f = 1 MHz VGS = 0 V 26 0 52 78 104 10 130 1 0.1 Qg, Gate Charge (nC) 10 40 VDS, Drain−to−Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 100 300 ID, Drain Current (A) IAS, Avalanche Current (A) RJC = 1.0°C/W TJ = 25°C TJ = 100°C 10 TJ = 125°C 1 0.01 0.1 1 10 240 180 120 VGS = 4.5 V 60 100 0 1000 25 Figure 9. Unclamped Inductive Switching Capability This Area is Limited by RDS(on) 100 s Single Pulse TJ = Max Rated 1 ms 10 ms DC RJC = 1.0°C/W TC = 25°C Curve Bent to Measured Data 0.1 0.1 1 100 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 10 P(PK), Peak Transient Power (W) ID, Drain Current (A) 10 s 1 75 20000 2000 1000 10 50 TC, Case Temperature (5C) tAV, Time in Avalanche (ms) 100 VGS = 10 V Limited by Package Single Pulse RJC = 1.0°C/W TC = 25°C 10000 1000 100 10 10−5 100 200 VDS, Drain−to−Source Voltage (V) 10−4 10−3 10−2 10−1 t, Pulse Width (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 FDMS8320LDC TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) r(t), Normalized Effective Transient Thermal Resistance 2 1 0.1 Duty Cycle−Descending Order D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.001 10−5 P DM t1 t2 Notes: ZJC(t) = r(t) × RJC RJC = 1.0°C/W Peak TJ = PDM × ZJC(t) + TC Duty Cycle, D = t1 / t2 Single Pulse 10−4 10−3 10−2 10−1 1 t, Rectangular Pulse Duration (s) Figure 13. Junction−to−Case Transient Thermal Response Curve PACKAGE MARKING AND ORDERING INFOMRATION PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size† Tape Width Quantity 8320L FDMS8320LDC DUAL COOL 56 13″ 12 mm 3000 Units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DUAL COOL and POWERTRENCH are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D DATE 25 AUG 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXX ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code 98AON84257G *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5x6.15, 1.27P, DUAL COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative