FDMS86150

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency Applications „ MSL1 robust package design „ Primary DC-DC MOSFET „ 100% UIL tested „ Secondary Synchronous Rectifier „ RoHS Compliant „ Load Switch Bottom Top S Pin 1 D D D S S Pin 1 S D G S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 16 A 300 Single Pulse Avalanche Energy PD Units V 80 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 726 156 (Note 1a) Operating and Storage Junction Temperature Range 2.7 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 0.8 (Note 1a) 45 °C/W Package Marking and Ordering Information Device Marking FDMS86150 Device FDMS86150 ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.1.5 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 VGS = 10 V, ID = 16 A 3.9 4.85 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 13 A 6 7.8 VGS = 10 V, ID = 16 A, TJ = 125 °C 7.3 9.1 VDS = 10 V, ID = 16 A 53 gFS Forward Transconductance 2 3 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 3055 4065 pF 696 930 pF 29 50 pF 0.7 3.6 Ω ns Switching Characteristics 18 33 VDD = 50 V, ID = 16 A, VGS = 10 V, RGEN = 6 Ω 8.3 17 ns 28 45 ns 6 12 ns Total Gate Charge VGS = 0 V to 10 V 44 62 nC VGS = 0 V to 5 V 25 35 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 16 A nC 12.9 nC 9.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.69 1.2 VGS = 0 V, IS = 16 A (Note 2) 0.78 1.3 IF = 16 A, di/dt = 100 A/μs V 69 110 ns 94 150 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 45 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 115 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 726 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 22 A, VDD = 100 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 69 A. ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.1.5 2 www.fairchildsemi.com FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 250 ID, DRAIN CURRENT (A) 4 VGS = 10 V VGS = 8 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 VGS = 7 V 200 150 VGS = 6 V 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V 3 VGS = 6 V VGS = 7 V 2 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 200 250 300 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 20 ID = 16 A VGS = 10 V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 300 10 TJ = 125 oC 5 TJ = 25 oC 4 IS, REVERSE DRAIN CURRENT (A) 150 100 TJ = 25 oC 50 TJ = -55 oC 0 3 4 5 6 7 6 7 8 9 300 100 VGS = 0 V TJ = 150 oC 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.1.5 10 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V TJ = 150 oC 5 VGS, GATE TO SOURCE VOLTAGE (V) 200 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 250 ID = 16 A 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 8 V 3 1.2 www.fairchildsemi.com FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 10000 ID = 16 A VDD = 50 V VDD = 25 V CAPACITANCE (pF) 8 VDD = 75 V 6 4 Ciss 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 50 1 Figure 7. Gate Charge Characteristics 125 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 100 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 100 VGS = 10 V 75 Limited by Package 50 VGS = 6 V 25 o RθJC = 0.8 C/W 0.1 0.01 0.1 1 10 100 0 25 1000 10000 100000 50 100 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 300 100 10 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 10 ms SINGLE PULSE TJ = MAX RATED 100 ms 1s RθJA = 115 oC/W 0.01 0.01 10 s DC TA = 25 oC 0.1 1 10 100 500 100 10 SINGLE PULSE RθJA = 115 oC/W 1 TA = 25 oC 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.1.5 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZθJA(t) = r(t) x RθJA 0.01 SINGLE PULSE 0.001 -3 10 RθJA = 115 °C/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.1.5 5 www.fairchildsemi.com FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5.10 4.90 A 3.81 PKG CL 8 4.42 B 5 8 7 6 5 1.14 KEEP OUT AREA 3.65 6.25 5.90 PKG CL 6.61 4.79 1.27 1 PIN #1 IDICATOR 4 TOP VIEW 1 2 3 4 1.27 SEE DETAIL A 0.61 3.81 5.10 LAND PATTERN RECOMMENDATION SIDE VIEW 3.81 0.10 1.27 (0.38) 1 C A B 0.47 (8X) 0.37 4 (0.35) 0.65 0.55 PIN #1 INDICATOR 4.66 4.46 8 5 4.33 4.13 0.70 BOTTOM VIEW 0.10 C 1.10 0.90 0.08 C C 0.25 0.15 SCALE: 2:1 0.05 0.00 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08JREV3. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com