FDP023N08B_F102

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ Features Description • RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed Applications • 100% UIL Tested • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • DC motor Drives and Uninterruptible Power Supplies • Micro Solar Inverte D G D S G TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter - Continuous (TC = 25oC, Silicon Limited) Drain Current - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Pulsed Unit V ±20 V 242* 171* A 120 (Note 1) 968 A (Note 2) 961 mJ 6 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL FDP023N08B_F102 75 - Derate Above 25oC 245 W 1.64 W/oC -55 to +175 oC 300 oC FDP023N08B_F102 Unit * Package limitation current is 120A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.61 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 1 o C/W www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET November 2013 Part Number FDP023N08B_F102 Top Mark FDP023N08B Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 75 - - V - 0.35 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0V, TC = 25oC o ID = 250 μA, Referenced to 25 C VDS = 60 V, VGS = 0 V - - 1 VDS = 60 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 2.0 - 3.8 V - 1.96 2.35 mΩ - 185 - S - 10350 13765 pF - 1855 2465 pF - 46.8 - pF - 3290 - pF - 150 195 nC - 50.3 - nC - 31.7 - nC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 75 A VDS = 10 V, ID = 75 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge - 4.9 - V Qsync Total Gate Charge Sync. VDS = 0 V, ID = 50 A - 127.4 - nC Qoss Output Charge VDS = 37.5 V, VGS = 0 V - 146.2 - nC - 41 92 ns VDD = 37.5 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω - 71 151 ns VDS = 37.5 V, VGS = 0 V, f = 1 MHz VDS = 37.5 V, VGS = 0 V VDS = 37.5 V, ID = 100 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) (Note 4) f = 1 MHz - 111 232 ns - 56 122 ns - 2.23 - Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 242* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 968 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A - - 1.3 V trr Reverse Recovery Time - 79.3 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD=37.5 V, ISD = 100 A, dIF/dt = 100 A/μs - 114 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 25.32 A, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 2 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 300 *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.1 1 VDS, Drain-Source Voltage[V] 1 2 3 4 5 VGS, Gate-Source Voltage[V] 6 500 VGS = 6V VGS = 5.5V VGS = 5V IS, Reverse Drain Current [A] 8 6 4 VGS = 7V 2 VGS = 20V VGS = 10V 100 o o 175 C 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 2 0.3 400 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 10 10000 100 2. 250μs Pulse Test Figure 6. Gate Charge Characteristics 20000 Capacitances [pF] -55 C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 0 o o 175 C 10 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [mΩ], Drain-Source On-Resistance o 25 C 1 10 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 Crss 6 4 2 0 75 3 VDS = 15V VDS = 37.5V VDS = 60V 8 *Note: ID = 100A 0 30 60 90 120 150 Qg, Total Gate Charge [nC] 180 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.6 1.4 1.2 1.0 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 250 100μs 200 ID, Drain Current [A] 100 1ms 10 Operation in This Area is Limited by R DS(on) 1 10ms 100ms DC SINGLE PULSE o TC = 25 C 0.1 VGS = 10V 150 100 50 o TJ = 175 C o o RθJC = 0.61 C/W 0.01 *Notes: 1. VGS = 10V 2. ID = 75A 0.8 0.6 -80 200 Figure 9. Maximum Safe Operating Area ID, Drain Current [A] 1.8 1 10 VDS, Drain-Source Voltage [V] RθJC = 0.61 C/W 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 5.5 200 100 IAS, AVALANCHE CURRENT (A) EOSS, [μJ] 4.4 3.3 2.2 1.1 0.0 0 15 30 45 60 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 TJ = 25 oC 1 0.001 75 TJ = 150 oC 10 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP023N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve ZθJC (t), Thermal Response [o]C/W] Thermal Response [ZθJC 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 *Notes: Single pulse t2 o 1. ZθJC(t) = 0.61 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 -4 10 -3 -2 10 10 Rectangular [sec] t1, RectangularPulse PulseDuration Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 6 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 7 www.fairchildsemi.com Driver VGS ( Driver) VGS (DUT) VDD VRG RG t 10V t DUT Qsync = VGS 1 ⋅ VR ( t ) dt RG  G Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 8 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET VCC FDP023N08B — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 19. TO220, Molded, 3-Lead, Jedec Variation AB, Non Jedec F102 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-IR3 ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2013 Fairchild Semiconductor Corporation FDP023N08B Rev. C3 10 www.fairchildsemi.com FDP023N08B — N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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