FDP053N08B-F102

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.5 nC • Soft Reverse-Recovery Body Diode Applications • Enables High Efficiency in Synchronous Rectification • Synchronous Rectification for ATX / Server / Telecom PSU • Fast Switching Speed • Battery Protection Circuit • 100% UIL Tested • Motor Drives and Uninterruptible Power Supplies • RoHS Compliant D GD S G TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) Drain Current ID S Parameter IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 100oC, Silicon Limited) Unit V ±20 V 120* 85.2* A - Continuous (TC = 25oC, Package Limited) 75 - Pulsed (Note 1) 480 A (Note 2) 365 mJ 6.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL FDP053N08B 80 - Derate Above 25oC 146 W 0.97 W/oC -55 to +175 o C 300 o C * Package limitation current is 75A. Thermal Characteristics Symbol Parameter FDP053N08B RθJC Thermal Resistance, Junction to Case, Max. 1.03 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Semiconductor Components Industries, LLC. October-2017,Rev.3 Unit oC/W Publication Order Number: FDP053N08B/D FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B Part Number FDP053N08B-F102 Top Mark FDP053N08B Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - 0.089 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V o ID = 250 μA, Referenced to 25 C VDS = 64 V, VGS = 0 V - - 1 VDS = 64 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 2.5 - 4.5 V - 4.2 5.3 mΩ - 100 - S - 4480 5960 pF - 740 985 pF - 20.5 - pF - 1333 - pF - 65.4 85 nC - 26.7 - nC - 15.3 - nC - 6.0 - V - 52.4 - nC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 75 A VDS = 10 V, ID = 75 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge Qsync Total Gate Charge Sync. VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 0 V VDS = 40 V, ID = 75 A, VGS = 10 V (Note 4) VDS = 0 V, ID = 37.5 A Qoss Output Charge VDS = 40 V, VGS = 0 V - 64.2 - nC ESR Equivalent Series Resistance (G-S) f = 1 MHz - 1.2 - Ω - 32 74 ns - 30 70 ns - 44 98 ns - 16 42 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 40 V, ID = 75 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 120* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 480 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A - - 1.3 V trr Reverse Recovery Time - 59.3 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 40 V, ISD = 75 A, dIF/dt = 100 A/μs - 62.5 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 15.6 A, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FDP053N08B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 10 *Notes: 1. 250μs Pulse Test o 1 0.1 2. TC = 25 C ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 VDS, Drain-Source Voltage[V] o 25 C 10 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o 175 C 2 3 4 5 6 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 5.0 4.5 VGS = 10V 4.0 VGS = 20V 3.5 100 o 175 C *Notes: 1. VGS = 0V *Note: TC = 25 C 0 90 180 270 ID, Drain Current [A] 360 o 25 C 10 o 2. 250μs Pulse Test 1 0.3 450 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] Figure 5. Capacitance Characteristics 10000 Ciss Capacitances [pF] 7 400 5.5 3.0 o -55 C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 6.0 RDS(ON) [mΩ], Drain-Source On-Resistance *Notes: 1. VDS = 10V 2. 250μs Pulse Test 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 VDS = 16V VDS = 40V VDS = 64V 8 6 4 2 Crss 1 10 VDS, Drain-Source Voltage [V] 0 100 www.onsemi.com 3 *Note: ID = 75A 0 20 40 60 Qg, Total Gate Charge [nC] 80 FDP053N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.8 1.6 1.4 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.8 0.6 -80 200 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 140 1000 100μs 10 Operation in This Area is Limited by R DS(on) 1 ID, Drain Current [A] ID, Drain Current [A] 120 100 1ms 10ms 100ms DC SINGLE PULSE o TC = 25 C 0.1 100 60 40 o TJ = 175 C 20 o 1 10 VDS, Drain-Source Voltage [V] 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 175 Figure 12. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 2.0 EOSS, [μJ] 50 75 100 125 150 o TC, Case Temperature [ C] 100 2.5 1.5 1.0 0.5 0.0 o RθJC = 1.03 C/W RθJC = 1.03 C/W 0.01 VGS = 10V 80 0 15 30 45 60 75 VDS, Drain to Source Voltage [V] TJ = 25 oC 10 1 0.001 90 TJ = 150 oC 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) www.onsemi.com 4 100 400 FDP053N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Thermal Response [ZθJC ZθJC (t), Thermal Response [o]C/W] Figure 13. Transient Thermal Response Curve 1.5 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 *Notes: 0.02 o 1. ZθJC(t) = 1.03 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.001 -5 10 t2 -4 10 -3 -2 10 10 Rectangular [sec] t1, RectangularPulse PulseDuration Duration [sec] www.onsemi.com 5 -1 10 1 FDP053N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP053N08B — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FDP053N08B — N-Channel PowerTrench® MOSFET DUT Driver VGS ( Driver) VDD VRG RG VGS VGS (DUT) t 10V t DUT Qsync = 1 ⋅ VR ( t ) dt RG ∫ G Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms www.onsemi.com 8 FDP053N08B — N-Channel PowerTrench® MOSFET VCC FDP053N08B — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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