FDP027N08B-F102

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed Applications • 100% UIL Tested • Synchronous Rectification for ATX / Server / Telecom PSU • This device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GD S G TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) Drain Current ID IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Power Dissipation PD - Continuous (TC = 100oC, Silicon Limited) FDP027N08B_F102 80 Unit V ±20 V 223* 158* A - Continuous (TC = 25oC, Package Limited) 120 - Pulsed (Note 1) 892 A (Note 2) 917 mJ 6.0 V/ns (Note 3) (TC = 25oC) - Derate Above 25oC 246 W 1.64 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 TL *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. o C o C Thermal Characteristics Symbol Parameter FDP027N08B_F102 RθJC Thermal Resistance, Junction to Case, Max. 0.61 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Semiconductor Components Industries, LLC December 2017, Rev. 3 1 Unit o C/W Publication Order Number: FDP027N08B/D FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B Part Number FDP027N08B-F102 Top Mark FDP027N08B Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - 0.05 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 64 V, VGS = 0 V - - 1 VDS = 64 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 4.5 V Static Drain to Source On Resistance - 2.21 2.7 mΩ gFS Forward Transconductance VGS = 10 V, ID = 100 A VDS = 10 V, ID = 100 A - 227 - S - 10170 13530 pF - 1670 2220 pF - 35 - pF - 3025 - pF - 137 178 nC - 56 - nC - 25 - nC - 28 - nC f = 1 MHz - 2.4 - Ω - 47 104 ns VDD = 40 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω - 66 142 ns - 87 184 ns - 41 92 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 10 V, ID = 100A (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 223* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 892 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 100 A - - 1.3 V trr Reverse Recovery Time - 80 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 40 V, ISD = 100 A, dIF/dt = 100 A/μs - 112 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 24.72 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FDP027N08B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 100 ID, Drain Current[A] ID, Drain Current[A] *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 *Notes: 1. 250μs Pulse Test 10 o 2. TC = 25 C 5 0.1 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V o 25 C 10 o -55 C 1 VDS, Drain-Source Voltage[V] 1 2.5 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 3.5 4.0 4.5 5.0 5.5 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] VGS = 10V 2.0 VGS = 20V 1.5 100 o o 25 C 175 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 400 1 0.2 500 Figure 5. Capacitance Characteristics 10 Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] 10000 Capacitances [pF] 0.4 0.6 0.8 1.0 1.2 1.3 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 100 6.5 500 2.5 1.0 6.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.0 RDS(ON) [mΩ], Drain-Source On-Resistance o 175 C 6 4 2 0 80 www.onsemi.com 3 VDS = 16V VDS = 40V VDS = 64V 8 *Note: ID = 100A 0 30 60 90 120 Qg, Total Gate Charge [nC] 150 FDP027N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 100A 0.5 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 250 2000 1000 VGS= 10V 200 100 100us 10 Operation in This Area is Limited by R DS(on) 1 ID, Drain Current [A] ID, Drain Current [A] 10us 1ms 10ms DC *Notes: o 1. TC = 25 C 0.1 0.01 150 100 50 o 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] o RθJC= 0.61 C/W 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage 175 200 100 IAS, AVALANCHE CURRENT (A) 5 4 3 2 1 0 50 75 100 125 150 o TC, Case Temperature [ C] Figure 12. Unclamped Inductive Switching Capability 6 EOSS, [μJ] 200 0 20 40 60 VDS, Drain to Source Voltage [V] 80 TJ = 25 oC TJ = 150 oC 10 1 0.001 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) www.onsemi.com 4 1000 FDP027N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve o ZThermal Response θJC(t), Thermal Response [ZθJC[ ]C/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 o 0.01 0.01 1. ZθJC(t) = 0.61 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 t2 *Notes: 0.02 -4 10 -3 10 -2 10 Duration[sec] [sec] t1Rectangular , Rectangular Pulse Pulse Duration www.onsemi.com 5 -1 10 1 FDP027N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP027N08B — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FDP027N08B — N-Channel PowerTrench® MOSFET DUT FDP027N08B — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. Always visit ON Semiconductor’s online packaging area for the most recent package drawings: www.onsemi.com www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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