FDP032N08-F102

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP032N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.2 mΩ Features Description • RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies D G G D S TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Drain Current ID - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Pulsed Unit V ±20 V 235 A 165 A 120 A (Note 1) 940 A (Note 2) 1995 mJ 6.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL FDP032N08 75 - Derate Above 25oC 375 W 2.5 W/oC -55 to +175 o C 300 oC FDP032N08 Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.4 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 1 oC/W www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET November 2013 Part Number FDP032N08 Top Mark FDP032N08 Electrical Characteristics Symbol Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 75 - - V - 0.05 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TC = 25oC ID = 250 μA, Referenced to 25oC VDS = 75 V, VGS = 0 V - - 1 VDS = 75 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.5 4.5 V Static Drain to Source On Resistance VGS = 10 V, ID = 75 A - 2.5 3.2 mΩ gFS Forward Transconductance VDS = 10 V, ID = 75 A - 180 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 11400 15160 pF - 1360 1810 pF - 595 800 pF - 169 220 nC - 60 - nC - 47 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 60 V, ID = 75 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 37.5 V, ID = 75 A, RG = 25 Ω, VGS = 10 V (Note 4) - 230 470 ns - 191 392 ns - 335 680 ns - 121 252 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 235 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 940 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A - - 1.3 V trr Reverse Recovery Time 53 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 75 A, dIF/dt = 100 A/μs - 77 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.71 mH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 75 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 2 www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3000 500 100 100 ID,Drain Current[A] ID,Drain Current[A] 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 1 o 175 C o 25 C 10 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.01 2. TC = 25 C 0.1 VDS,Drain-Source Voltage[V] 1 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS,Gate-Source Voltage[V] VGS = 10V 0.0025 VGS = 20V 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics 10000 Coss 1000 100 0.1 *Note: 1. VGS = 0V 2. f = 1MHz Crss 1 10 VDS, Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 100000 Capacitances [pF] 8 400 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.0030 0.0020 o -55 C 8 6 4 2 0 80 3 VDS = 15V VDS = 37.5V VDS = 60V *Note: ID = 75A 0 50 100 150 Qg, Total Gate Charge [nC] 200 www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 250 200 100 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10 10ms 100ms DC Operation in This Area is Limited by R DS(on) SINGLE PULSE 1 o TC = 25 C 150 Limited by package 100 50 o TJ = 175 C o RθJC = 0.40 C/W 0.1 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125o 150 TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response [oC/W] Thermal Response [ZθJC] 0.5 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 o Single pulse 0.001 -5 10 ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 t2 *Notes: 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration [sec] [sec] 4 0 10 1 10 www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP032N08 — N-Channel PowerTrench® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 5 www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 6 www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Non Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-0R3 ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. C2 8 www.fairchildsemi.com FDP032N08 — N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® μSerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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