FDP085N10A-F102

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features Description This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A • Fast Switching Speed • Low Gate Charge, QG = 31 nC (Typ.) Applications • High Performance Trench Technology for Extremely Low RDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies D GD S G TO-220 S MOSFET Maximum Ratings TC = 25 Symbol VDSS C unless otherwise noted. Parameter FDP085N10A-F102 100 Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current dv/dt Peak Diode Recovery dv/dt EAS o ±20 - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy A 68 (Note 1) 384 A (Note 2) 269 mJ 6.0 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL V 96 (Note 3) (TC = 25oC) Unit V - Derate Above 25oC 188 W W/oC 1.25 o -55 to +175 o 300 C C Thermal Characteristics Symbol Parameter Thermal Resistance, Junction to Case, Max. 0.8 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Semiconductor Components Industries, LLC November-2017, Rev. 3 Unit FDP085N10A-F102 RθJC 1 o C/W Publication Order Number: FDP085N10A/D FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A Part Number FDP085N10A-F102 Top Mark FDP085N10A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.07 - V/oC Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 µA, VGS = 0 V,TC = 25oC o ID = 250 µA, Referenced to 25 C VDS = 80 V, VGS = 0 V VDS = 80 V, TC = 150oC - - 1 - - 500 VGS = ±20 V, VDS = 0 V - - ±100 VGS = VDS, ID = 250 µA 2.0 - 4.0 V - 7.35 8.5 mΩ - 72 - S - 2025 2695 pF - 468 620 pF pF µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage gFS Forward Transconductance Static Drain to Source On Resistance VGS = 10 V, ID = 96 A VDS = 10 V, ID = 96 A Dynamic Characteristics Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs2 Gate Charge Threshoid to Plateau ESR Equivalent Series Resistance (G-S) Coss Output Capacitance Coss(er) Energy Releted Output Capacitance Qgs Gate to Source Gate Charge Qgd VDS = 50 V, VGS = 0 V, f = 1 MHz - 20 - VDS = 50 V, VGS = 0 V - 752 - pF - 31 40 nC VGS = 10 V, VDS = 50 V, ID = 96 A - 9.7 - nC - 5.0 - nC - 7.5 - nC - 0.97 - Ω - 18 46 ns - 22 54 ns - 29 68 ns - 8 26 ns Gate to Drain “Miller” Charge (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time td(off) Turn-Off Delay Time tr Turn-On Rise Time tf Turn-Off Fall Time VDD = 50 V, ID = 96 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 96 A Maximum Pulsed Drain to Source Diode Forward Current - - 384 A VSD Drain to Source Diode Forward Voltage - - 1.3 V - 59 - ns - 80 - nC ISM trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 96 A VDD = 50 V,VGS = 0 V, ISD = 96 A, dIF/dt = 100 A/µs Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 96 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FDP085N10A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information FDP085N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 100 ID, Drain Current[A] ID, Drain Current[A] 500 o 175 C o 25 C 10 o -55 C *Notes: 1. 250µs Pulse Test 10 o 2. TC = 25 C 5 0.1 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 18 2 3 4 5 6 VGS, Gate-Source Voltage[V] 500 o *Note: TC = 25 C IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance VGS = 10V 12 8 VGS = 20V 0 100 200 300 ID, Drain Current [A] o 10 *Notes: 1. VGS = 0V 2. 250µs Pulse Test 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] o 25 C 1 0.3 10000 1000 10 0.1 175 C 100 400 Figure 5. Capacitance Characteristics 100 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 16 4 *Notes: 1. VDS = 10V 2. 250µs Pulse Test Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 VDS, Drain-Source Voltage [V] 6 4 2 0 100 www.onsemi.com 3 VDS = 20V VDS = 50V VDS = 80V 8 *Note: ID = 96A 0 7 14 21 28 Qg, Total Gate Charge [nC] 35 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 0.92 -80 *Notes: 1. VGS = 0V 2. ID = 250µA -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.0 ID, Drain Current [A] 100µs 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 1. TC = 25 C 1ms 10ms DC VGS= 10V 40 20 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] o RθJC = 0.8 C/W 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage IAS, AVALANCHE CURRENT (A) 2.0 1.5 1.0 0.5 20 40 60 80 V DS , Drain to Source Voltage [V ] 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 30 2.5 EOSS, [µJ] 200 60 o 0 0 40 80 120 160 o TJ, Junction Temperature [ C] 80 100 0.0 -40 100 10µs 0.1 *Notes: 1. VGS = 10V 2. ID = 96A Figure 10. Maximum Drain Current vs. Case Temperature 1000 ID, Drain Current [A] 1.5 0.5 -80 200 Figure 9. Maximum Safe Operating Area 2.0 100 www.onsemi.com 4 If R = 0 t AV = (L)(IAS)/(1.3*RATED BV DSS -V DD ) If R = 0 t AV = (L/R)In[(I AS*R)/(1.3*RATED BV DSS-V DD )+1] 10 o STARTING T J = 25 C o STARTING T J = 150 C 1 0.01 0.1 1 10 100 300 tAV , TIME IN AVALANCHE (ms) FDP085N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) o ZθJC (t), Thermal Response Thermal Response [ZθJC[ ]C/W] Figure 13. Transient Thermal Response Curve 1 0.5 PDM 0.2 0.1 t1 0.1 0.01 Single pulse 0.005 -5 10 o 1. ZθJC(t) = 0.8 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 t2 *Notes: 0.05 -4 10 -3 -2 10 10 t1, Rectangular PulseDuration Duration [sec] [sec] Rectangular Pulse www.onsemi.com 5 -1 10 1 FDP085N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP085N10A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS DUT VGS 10% td(on) tr t on td(off) t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 tf + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FDP085N10A — N-Channel PowerTrench® MOSFET DUT FDP085N10A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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