FDB15N50
N-Channel UniFETTM MOSFET
500 V, 15 A, 380 mΩ
Description
Features
UniFETTM MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and
DMOS technology. This MOSFET is tailored to reduce
on-state resistance, and to provide better switching
performance and higher avalanche energy strength. This
device family is suitable for switching power converter
applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp
ballasts.
• Low gate charge Qg results in simple drive requirement
(Typ. 33 nC)
• Improved Gate, avalanche and high reapplied dv/dt
ruggedness
• Reduced RDS(on) ( 330mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A)
• Reduced Miller capacitance and low Input capacitance
(Typ. Crss = 16 pF)
• Improved switching speed with low EMI
• 175oC rated junction temperature
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
D2-PAK
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
FDB15N50
500
Unit
V
Gate to Source Voltage
±30
V
Drain Current
Continuous (TC = 25oC, VGS = 10V)
15
A
Parameter
Drain to Source Voltage
o
Continuous (TC = 100 C, VGS = 10V)
(Note 1)
Pulsed
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Soldering Temperature for 10 seconds
11
A
60
A
300
2
W
W/oC
-55 to 175
o
C
300 (1.6mm from case)
o
C
Thermal Characteristics
Symbol
FDB15N50
Parameter
RθJC
Thermal Resistance Junction to Case, Max.
RθJA
Thermal Resistance Junction to Ambient, Max.
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
0.50
1
62
Unit
o
C/W
oC/W
www.fairchildsemi.com
FDB15N50 — N-Channel UniFETTM MOSFET
November 2013
Device Marking
FDB15N50
Device
FDB15N50
Package
D2-PAK
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
500
-
-
V
-
0.58
-
V/°C
Unit
Statics
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
ID = 250µA, VGS = 0V
Reference to 25oC,
ID = 1mA
RDS(ON)
Drain to Source On-Resistance
VGS = 10V, ID = 7.5A
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
-
0.33
0.38
Ω
2.0
3.4
4.0
V
VDS = 500V
TC = 25oC
-
-
25
VGS = 0V
TC = 150oC
-
-
250
VGS = ±30V
-
-
±100
Forward Transconductance
VDD = 10V, ID = 7.5A
10
-
-
S
Total Gate Charge at 10V
VGS = 10V,
VDS = 400V,
ID = 15A
-
33
41
nC
-
7.2
10
nC
-
12
16
nC
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
µA
nA
Dynamics
gfs
Qg(TOT)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
td(ON)
tr
td(OFF)
tf
Turn-On Delay Time
VDD = 250V,
ID = 15A,
RG = 6.2Ω,
RD = 17Ω
Rise Time
Turn-Off Delay Time
Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
9
-
5.4
-
ns
ns
-
26
-
ns
-
5
-
ns
-
1850
-
pF
-
230
-
pF
-
16
-
pF
760
-
-
mJ
-
-
15
A
-
-
15
A
-
-
60
A
Avalanche Characteristics
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
(Note 2)
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
QRR
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Source to Drain Diode Voltage
(Note 1)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
ISD = 15A
-
0.86
1.2
V
Reverse Recovery Time
ISD = 15A, diSD/dt = 100A/µs
-
470
730
ns
Reverse Recovered Charge
ISD = 15A, diSD/dt = 100A/µs
-
5
6.6
µC
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature.
2: Starting TJ = 25°C, L = 7.0mH, IAS = 15A.
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
2
www.fairchildsemi.com
FDB15N50 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
100
TJ = 25oC
VGS DESCENDING
ID, DRAIN TO SOURCE CURRENT (A)
ID, DRAIN TO SOURCE CURRENT (A)
100
10V
6.5V
6V
5.5V
5V
4.5V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
10
TJ = 175oC
VGS DESCENDING
10V
6V
5.5V
5V
4.5V
4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
100
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
3.5
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
50 VDD = 100V
NORMALIZED ON RESISTANCE
ID , DRAIN CURRENT (A)
PULSE DURATION = 80µs
40
30
TJ = 175oC
TJ = 25oC
20
10
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
3.0
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
VGS = 10V, ID = 7.5A
0.5
0
-50
6.5
-25
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. Transfer Characteristics
4000
0
o
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
15
CISS
VGS , GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
COSS
100
CRSS
VGS = 0V, f = 1MHz
10
1
10
100
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
12
100V
250V
9
400V
6
3
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source
Voltage
ID = 15A
Figure 6. Gate Charge Waveforms For Constant
Gate Current
3
www.fairchildsemi.com
FDB15N50 — N-Channel UniFETTM MOSFET
Typical Characteristics
100
TC = 25oC
25
100µs
ID, DRAIN CURRENT (A)
ISD , SOURCE TO DRAIN CURRENT (A)
30
20
15
TJ = 175oC
TJ = 25oC
10
5
10
1ms
10ms
1.0
OPERATION IN THIS AREA
0
0.3
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
VSD , SOURCE TO DRAIN VOLTAGE (V)
1000
Figure 8. Maximum Safe Operating Area
16
IAS, AVALANCHE CURRENT (A)
50
12
8
4
0
25
50
75
100
125
150
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
175
o
TC, CASE TEMPERATURE ( C)
0.1
1
10
50
tAV, TIME IN AVALANCHE (ms)
Figure 9. Maximum Drain Current vs Case
Temperature
ZθJC(t), Thermal Response [oC/W]
100
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
ID, DRAIN CURRENT (A)
DC
LIMITED BY RDS(ON)
Figure 10. Unclamped Inductive Switching
Capability
100
10-1
0.50
0.20
t1
0.10
PD
0.05
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
10-2 -5
10
SINGLE PULSE
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
4
www.fairchildsemi.com
FDB15N50 — N-Channel UniFETTM MOSFET
Typical Characteristics
VDS
BVDSS
tP
VDS
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 12. Unclamped Energy Test Circuit
Figure 13. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
RL
VGS = 10V
VDS
VGS
+
VDD
VGS
-
VGS = 1V
DUT
0
Ig(REF)
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
+
VGS
VDD
10%
10%
0
DUT
90%
RGS
VGS
VGS
0
Figure 16. Switching Time Test Circuit
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
10%
50%
50%
PULSE WIDTH
Figure 17. Switching Time Waveform
5
www.fairchildsemi.com
FDB15N50 — N-Channel UniFETTM MOSFET
Test Circuits and Waveforms
FDB15N50 — N-Channel UniFETTM MOSFET
Mechanical Dimensions
Figure 18. TO263 (D2PAK), Molded, 2-Lead, Surface Mount
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
6
www.fairchildsemi.com
tm
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
7
www.fairchildsemi.com
FDB15N50 — N-Channel UniFETTM MOSFET
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