FDPF18N50T

N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Features • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A Description • Low Gate Charge (Typ. 45 nC) UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D G D S G G D S TO-220 TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FDPF18N50 / FDPF18N50T Unit 18 10.8 18 * 10.8 * A A 72 72 * A FDP18N50 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 500 IDM Drain Current - Pulsed (Note 1) V ±30 V 945 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ 4.5 V/ns dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C (Note 3) (TC = 25°C) - Derate Above 25°C 235 1.88 38.5 0.3 W W/°C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP18N50 FDPF18N50 / FDPF18N50T Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.53 3.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W ©2012 Semiconductor Components Industries, LLC. November-2017, Rev 3 Publication Order Number: FDPF18N50T/D FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T Part Number FDP18N50 Top Mark FDP18N50 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF18N50 FDPF18N50 TO-220F Tube N/A N/A 50 units FDPF18N50T FDPF18N50T TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9 A -- 0.220 0.265 Ω gFS Forward Transconductance VDS = 40 V, ID = 9 A -- 25 -- S VDS = 25 V, VGS = 0 V, f = 1 MHz -- 2200 2860 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 330 430 pF -- 25 40 pF -- 55 120 ns -- 165 340 ns -- 95 200 ns -- 90 190 ns -- 45 60 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 18 A, VGS = 10 V, RG = 25 Ω (Note 4) VDS = 400 V, ID = 18 A, VGS = 10 V (Note 4) -- 12.5 -- nC -- 19 -- nC 18 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A -- -- 1.4 V trr Reverse Recovery Time 500 -- ns Reverse Recovery Charge VGS = 0 V, IS = 18 A, dIF/dt =100 A/μs -- Qrr -- 5.4 -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.2 mH, IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 18 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 0 10 o 150 C 1 10 o 25 C o -55 C * Notes : 1. 250μs Pulse Test -1 * Notes : 1. VDS = 40V 2. 250μs Pulse Test o 10 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 6 10 2 10 0.6 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 o 1 10 150oC o * Notes : 1. VGS = 0V 2. 250μs Pulse Test 25 C * Note : TJ = 25 C 0.1 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 10 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics Coss Ciss 2000 1000 1.4 1.6 1.8 2.0 2.2 2.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note : 1. VGS = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 3000 1.2 Figure 6. Gate Charge Characteristics 5000 4000 1.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitances [pF] 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 * Note : ID = 18A 0 -1 10 0 10 1 10 0 VDS, Drain-Source Voltage [V] 0 10 20 30 QG, Total Gate Charge [nC] www.onsemi.com 3 40 50 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250μA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 9 A 0.5 0.0 -100 200 o -50 TJ, Junction Temperature [ C] 0 50 100 150 Figure 9-1. Maximum Safe Operating Area - FDP18N50 Figure 9-2. Maximum Safe Operating Area - FDPF18N50 / FDPF18N50T 2 2 10 10 1 ms 10 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 0 10 -1 100 μs 1 10 1 ms 10 ms 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC -1 * Notes : 10 10 μs ID, Drain Current [A] ID, Drain Current [A] 10 μs 100 μs 1 * Notes : 10 o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 10 -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 20 ID, Drain Current [A] 15 10 5 50 75 100 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 25 200 o TJ, Junction Temperature [ C] 125 150 o TC, Case Temperature [ C] www.onsemi.com 4 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP18N50 θJC o ZθJC Thermal Response Z (t),(t), Thermal Response[ C/W] 10 0 D = 0 .5 10 0 .2 -1 0 .1 PDM 0 .0 5 10 t1 0 .0 2 0 .0 1 -2 * N o te s : o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) s in g le p u ls e 10 t2 1 . Z θ J C ( t) = 0 .5 3 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 -1 PDM 0 .0 2 t1 0 .0 1 * N o te s : 1 . Z θ J C ( t) = 3 .3 θJC ZθJC(t), Thermal Response [oC/W] Z (t), Thermal Response Figure 11-2. Transient Thermal Response Curve - FDPF18N50 / FDPF18N50T t2 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 10 -2 10 3 . T J M - T C = P D M * Z θ J C ( t) s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] www.onsemi.com 5 10 0 10 1 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) Figure 12. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET IG = const. + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET DUT FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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