FDR8308P

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. -3.2 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V, RDS(ON) = 0.070 Ω @ VGS = -2.5 V. These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge (13nC typical). These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. SuperSOTTM-8 package: small footprint (40% less than SO-8); low profile(1mmthick); maximum power comparable to SO-8. SuperSOTTM-8 SuperSOTTM-6 SOT-23 High performance trench technology for extremely low RDS(ON). SO-8 SOT-223 D2 D1 D2 P 08 83 D1 G2 pin 1 TM SuperSOT -8 G1 Absolute Maximum Ratings S2 S1 SOIC-16 5 4 6 3 7 2 8 1 TA = 25oC unless otherwise noted Symbol Parameter FDR8308P Units VDSS VGSS Drain-Source Voltage -20 V Gate-Source Voltage ±8 V ID Draint Current - Continuous -3.2 A PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range (Note 1) - Pulsed -20 (Note 1) 0.8 W -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W © 1998 Fairchild Semiconductor Corporation FDR8308P Rev.C Electrical Characteristics Symbol (TA = 25OC unless otherwise noted ) Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -50 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V o V mV /oC -16 TJ = 55°C -1 µA -10 µA IGSS Gate - Body Leakage Current VGS = 8 V, VDS = 0 V 100 nA IGSS Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = -50 µA, Referenced to 25 oC -0.4 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -3.2 A -0.9 -1.5 TJ = 125°C VGS = -2.5 V, ID = -2.7 A V mV /oC 2.5 0.038 0.05 0.053 0.075 0.054 0.07 -20 Ω ID(ON) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -4.5 V, ID = -3.2 A 13 A S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 1240 pF 270 pF 100 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = -5 V, ID = -1 A, 8 16 ns tr Turn - On Rise Time VGS = -4.5 V, RGEN = 6 Ω 15 27 ns tD(off) Turn - Off Delay Time 45 65 ns tf Turn - Off Fall Time 30 50 ns Qg Total Gate Charge VDS = -10 V, ID = -4.5 A, 13 19 nC Qgs Gate-Source Charge VGS = -4.5 V 1.8 nC Qgd Gate-Drain Charge 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.7 -0.67 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 156OC/W on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDR8308P Rev.C Typical Electrical Characteristics 2.5 VGS = -4.5V -3.0V R DS(on) , NORMALIZED -2.5V 16 12 8 -2.0V 4 -1.5V DRAIN-SOURCE ON-RESISTANCE - I D , DRAIN-SOURCE CURRENT (A) 20 VGS = -2.0 V 2 -2.5V 1.5 -3.0V -3.5V -4.5V 1 0.5 0 0 1 2 -V DS 3 4 0 5 5 10 15 20 - ID , DRAIN CURRENT (A) , DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate Voltage. 0.2 R DS(ON) , ON-RESISTANCE (OHM) I D = -3.2A VGS = -4.5V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) I D = -1.6A 0.15 0.1 TA = 125o C 0.05 25°C 0 1 3 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with Temperature. 15 TJ =-55°C VDS = -5V - I S , REVERSE DRAIN CURRENT (A) 15 25°C 12 125°C 9 6 3 0 0.9 2 - VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation - I D , DRAIN CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 1.2 1.5 1.8 2.1 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.4 2.7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR8308P Rev.C Typical Electrical Characteristics (continued) 2500 I D = -3.2A VDS = -5V Ciss 4 -10V CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1000 400 Coss 200 Crss f = 1 MHz VGS = 0 V 100 1 50 0.1 0 0 3 6 9 12 0.3 1 3 10 20 -VDS , DRAIN TO SOURCE VOLTAGE (V) 15 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. RD S(O L N) IM 50 100 us IT 1m s 10m s 10 0m s 1s 0.5 DC 0.05 0.01 0.1 VGS = -4.5V SINGLE PULSE RθJA = 156°C/W TAA = 25°C 0.2 SINGLE PULSE R θJA= 156°C/W TA = 25°C 40 POWER (W) 5 30 20 10 0.5 1 2 5 10 20 0 0.0001 30 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 r(t), NORMALIZED EFFECTIVE - ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 156 °C/W 0.2 0.1 0.05 P(pk) 0.02 t1 0.01 Single Pulse 0.002 0.001 0.0001 0.001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t 1/ t 2 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermal response will change depending on the circuit board design. FDR8308P Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.