FDS4465

FDS4465 P-Channel 1.8V Specified POWERTRENCH® MOSFET Description This P−Channel 1.8 V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V – 8 V). Features www.onsemi.com VDSS RDS(on) MAX ID MAX −20 V 8.5 mW @ −4.5 V −13.5 A • –13.5 A, –20 V 10.5 mW @ −2.5 V RDS(ON) = 8.5 mΩ @ VGS = –4.5 V ♦ RDS(ON) = 10.5 mΩ @ VGS = –2.5 V ♦ RDS(ON) = 14 mΩ @ VGS = –1.8 V Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(ON) High Current and Power Handling Capability ♦ • • • 14 mW @ −1.8 V P−Channel Applications • Power Management • Load Switch • Battery Protection 5 4 6 3 7 2 8 1 Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit VDSS Drain−to−Source Voltage −20 V VGSS Gate−to−Source Voltage ±8 V Continuous (Note 1a) −13.5 A Pulsed −50 (Note 1a) 2.5 (Note 1b) 1.5 (Note 1c) 1.2 ID PD TJ, TSTG Drain Current Power Dissipation Operating and Storage Junction Temperature Range D D D D S Pin 1 S S G SOIC8 CASE 751EB W MARKING DIAGRAM −55 to +175 °C FDS4465 \A/(LYW) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) 50 _C/W RqJA Thermal Resistance, Junction−to−Ambient (Note 1c) 125 _C/W RqJC Thermal Resistance, Junction−to−Ambient (Note 1) 25 _C/W © Semiconductor Components Industries, LLC, 2017 April, 2019 − Rev.4 1 A L YW FDS4465 = Assembly Site = Wafer Lot Number = Assembly Start Week = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: FDS4465/D FDS4465 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Min −20 Typ Max Unit OFF CHARACTERISTICS BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA DBVDSS DTJ Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = −16 V, VGS = 0 V −1 mA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = −8 V, VDS = 0 V −100 nA V −12 mV/°C ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage DVGS(th) DTJ Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain−Source On−Resistance VDS = VGS, ID = 250 mA gFS −0.6 −1.5 3 6.7 8.5 VGS = −2.5 V, ID = −12 A 8.0 10.5 VGS = −1.8 V, ID = −10.5 A 9.8 14 9.0 13 TJ = 125°C V mV/°C VGS = −4.5 V, ID = −13.5 A VGS = −4.5 V, ID = −13.5 A ID(on) −0.4 ID = −250 mA, Referenced to 25°C −50 mW On–State Drain Current VGS = −4.5 V, VDS = −5 V A Forward Transconductance VDS = −5 V, ID = −13.5 A 70 S VDS = −10 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Ciss Input Capacitance 8237 pF Coss Output Capacitance 1497 pF Crss Reverse Transfer Capacitance 750 pF Rg Gate Resistance 0.1 3.0 6.0 W 20 36 ns 24 38 ns SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 W Turn–Off Delay Time 300 480 ns tf Turn–Off Fall Time 140 224 ns Qg Total Gate Charge 86 120 nC Qgs Gate–Source Charge 20 nC Qgd Gate–Drain Charge 11 nC VDS = −10 V, ID = −1 A, VGS = −4.5 V DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = −2.1 A (Note 2) −0.6 −2.1 A −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% www.onsemi.com 2 c) 125°C/W when mounted on a minimum pad FDS4465 TYPICAL CHARACTERISTICS 50 3 VGS = −4.5 V −2..5 V RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE −ID, DRAIN CURRENT (A) 40 −2..0 V −1..5 V −1..8 V 30 20 10 0 0.5 0 1 2.6 2.2 VGS = −1.5 V 1.8 − 1.8 V −2.0V 1.4 −4..5 V 0.6 1.5 10 0 −VDS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON), ON−RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE ID = −6.3 A 1.2 1 0.8 0 25 50 75 100 125 150 0.02 0.015 TA = 125oC 0.01 TA = 25oC 0.005 0 175 0 1 o TJ, JUNCTION TEMPERATURE ( C) 2 3 4 5 −VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage 50 100 −IS, REVERSE DRAIN CURRENT (A) VDS = −5.0 V 40 −ID, DRAIN CURRENT (A) 50 0.025 1.4 −25 40 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage ID = −13.5 A VGS = −10 V 0.6 −50 30 20 −ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics 1.6 −2..5 V 1 30 20 TA = 125oC o 25 C 10 −55oC 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 −55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 1.5 −VSD, BODY DIODE FORWARD VOLTAGE (V) −VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics www.onsemi.com 3 FDS4465 TYPICAL CHARACTERISTICS 10000 VDS = −5 V ID = −13.5 A 4 8000 −15 V 3 2 6000 4000 1 2000 0 0 COSS CRSS 0 20 60 40 100 80 0 5 Qg, GATE CHARGE (nC) 1 ms 10 100 ms 1s 10 s DC VGS = −4.5 V SINGLE PULSE R JA = 125oC/W 0.1 TA = 2 5oC 0.01 0.1 1 10 SINGLE PULSE R JA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 −VDS, DRAIN−SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 100 s 10 ms 1 15 Figure 8. Capacitance Characteristics P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT 10 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics −ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS −10 V CAPACITANCE (pF) −VGS, GATE−SOURCE VOLTAGE (V) 5 1 D = 0.5 RqJA(t) = r(t) + RqJA 0.2 0.1 o RqJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 t2 TJ −TA = P * RqJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on circuit board design. www.onsemi.com 4 100 1000 FDS4465 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Reel Size Tape Width Shipping† FDS4465 FDS4465 13″ 12 mm 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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