FDS8935

Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ General Description Features „ This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package Applications „ 100% UIL Tested „ Load Switch „ Synchronous Rectifier „ RoHS Compliant D2 D2 D1 D1 G2 S2 G1 5 5 D2 66 D1 77 D1 S1 Pin 1 D2 88 Q2 Q1 4 4 G2 33 S2 22 G1 1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage VGS ID Parameter Ratings -80 Units V Gate to Source Voltage ±20 V Drain Current -Continuous -2.1 -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG A -10 (Note 3) 37 Power Dissipation TA = 25 °C (Note 1a) 3.1 Power Dissipation TA = 25 °C (Note 1b) 1.6 Operating and Storage Junction Temperature Range mJ W -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS8935 Device FDS8935 ©2010 Semiconductor Components Industries, LLC. October-2017, Rev.3 Package SO-8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units Publication Order Number: FDS8935/D FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -64 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA -3 V -80 V -61 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C VGS = -10 V, ID = -2.1 A 148 183 rDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -1.9 A 176 247 VGS = -10 V, ID = -2.1 A,TJ = 125 °C 249 308 VDS = -10 V, ID = -2.1 A 6.4 gFS Forward Transconductance -1 -1.8 5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -40 V, VGS = 0 V, f = 1MHz 661 879 pF 47 63 pF 24 36 pF Ω 6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to -10 V Qg(TOT) Total Gate Charge VGS = 0 V to -5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -40 V, ID = -2.1 A, VGS = -10 V, RGEN = 6 Ω VDD = -40 V, ID = -2.1 A 5 10 ns 3 10 ns 22 36 ns 3 10 ns 13 19 nC 7 10 nC 1.6 nC 2.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.1 A (Note 2) -1.8 -1.3 VGS = 0 V, IS = -1.3 A (Note 2) -0.8 -1.2 IF = -2.1 A, di/dt = 300 A/μs V 19 30 ns 34 54 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a)78 °C/W when mounted on a 1 in2 pad of 2 oz copper b)135 °C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V. www.onsemi.com 2 FDS8935 Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 10 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10 V -ID, DRAIN CURRENT (A) VGS = -5 V 8 V = -4 V GS VGS = -3.5 V 6 4 VGS = -3 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 5 VGS = -3 V 2.5 VGS = -3.5 V 2.0 1.5 1.0 VGS = -4 V 0.5 0 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 -50 ID = -2.1 A 200 TJ = 25 oC 0 8 VDS = -5 V 6 4 TJ = 25 oC 2 TJ = -55 oC 3 4 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 2 Figure 4. On-Resistance vs Gate to Source Voltage 10 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 150 oC 400 Figure 3. Normalized On- Resistance vs Junction Temperature 0 10 600 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 150 oC 8 800 ID = - 2.1 A VGS = -10 V 0.4 -75 4 6 -ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 1.8 VGS = -10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.0 Figure 1. On-Region Characteristics VGS = -5 V 5 20 10 VGS = 0 V 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 0.001 0.0 TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDS8935 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = -2.1 A VDD = -20 V Ciss 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -40 V 6 VDD = -60 V 4 Coss 100 2 0 0 3 6 9 12 10 0.1 15 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 2.2 2.5 2.0 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 1.8 1.6 TJ = 100 oC 1.4 TJ = 125 oC 1.2 2.0 VGS = -10 V 1.5 VGS = -4.5 V 1.0 Limited by package 0.5 o RθJA = 78 C/W 1.0 0.1 1 0.0 25 10 50 tAV, TIME IN AVALANCHE (ms) 125 150 o Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 100 us 1 ms 1 10 ms 0.01 0.005 0.1 100 1000 20 10 0.1 75 TA, Ambient TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC 1 1s 10 s DC 10 100 300 SINGLE PULSE VGS = -10 V o RθJA = 135 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 FDS8935 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDS8935 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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