FDS9435A

FDS9435A FDS9435A 30V P-Channel PowerTrench MOSFET Features • –5.3 A, –30 V General Description RDS(ON) = 50 mΩ @ V GS = –10 V RDS(ON) = 80 mΩ @ V GS = –4.5 V This P-Channel MOSFET is a rugged gate version of ON • Low gate charge Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring • Fast switching speed a wide range of gave drive voltage ratings (4.5V – 25V). • Power management • High performance trench technology for extremely low RDS(ON) • Load switch • High power and current handling capability Applications • Battery protection DD DD DD DD SO-8 Pin 1 SO-8 G G S SS S SS Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –30 V V GSS Gate-Source Voltage ±25 V ID Drain Current –5.3 A – Continuous (Note 1a) – Pulsed PD –50 Power Dissipation for Single Operation TJ , TSTG (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range W –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9435A FDS9435A 13’’ 12mm 2500 units 2001 Semiconductor Components Industries, LLC. October-2017, Rev. 4 Publication Order Number: FDS9435A /D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –24 V, V GS = 0 V –1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse V GS = 25 V, V GS = –25 V V DS = 0 V V DS = 0 V 100 –100 nA nA –3 V On Characteristics –30 ID = –250 µA, Referenced to 25°C V –23 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –10 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –5.3 A 10 S V DS = –15 V, f = 1.0 MHz V GS = 0 V, 528 pF 132 pF 70 pF –1 –1.7 4.5 V GS = –10 V, ID = –5.3 A V GS = –4.5 V, ID = –4 A V GS = –10 V, ID = –5.3 A, TJ =125°C 42 65 57 mV/°C 50 80 77 –25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) V DD = –15 V, V GS = –10 V, V DS = –15 V, V GS = –10 V ID = –1 A, RGEN = 6 Ω ID = –4 A, 7 14 ns 13 24 ns 14 25 ns 9 17 ns 10 14 nC 2.2 nC 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.1 A Voltage (Note 2) –0.8 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 c) 125°C/W when mounted on a minimum pad. FDS9435A Electrical Characteristics FDS9435A Typical Characteristics 30 2 V GS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -ID , DRAIN CURRENT (A) -5.0V V -4.5V V 20 -4.0V 10 -3.5V -3.0V 0 1.8 VGS=-4.0V 1.6 -4.5V 1.4 -5.0V -6.0V -7.0V 1.2 -8.0V -10V 1 0.8 0 1 2 3 4 5 6 0 6 12 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 30 0.25 ID = -5.3A VGS = -10V ID = -2.8A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 24 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.2 0.15 T A = 125o C 0.1 T A = 25o C 0.05 0.6 0 -50 -25 0 25 50 75 100 125 150 175 2 4 TJ , JUNCTION TEMPERATURE (oC) 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 100 25oC T A = -55o C -I S, REVERSE DRAIN CURRENT (A) V DS = -5V 12 -ID, DRAIN CURRENT (A) 18 -I D, DRAIN CURRENT (A) 125oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 4.5 TA = 125o C 1 25oC 0.1 -55 oC 0.01 0.001 0.0001 0 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. VGS =0V 10 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDS9435A Typical Characteristics 800 ID = -5.3A V DS = -5V f = 1 MHz V GS = 0 V 700 -10V 8 -15V 600 CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 500 400 300 COSS 200 100 CRSS 0 0 0 2 4 6 8 10 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100µs -ID, DRAIN CURRENT (A) 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) 1ms 10 10ms 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE Rθ JA = 125 oC/W 0.1 T A = 25o C 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 -V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA o 0.2 0.1 RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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