FDT458P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. • 3.4 A, –30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • Low gate charge (2.5 nC typical) Applications • High performance trench technology for extremely low RDS(ON) • Battery chargers • High power and current handling capability in a widely used surface mount package • Motor drives D D D D S S D G SOT-223 G D SOT-223* G G S (J23Z) Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter – 30 V V GSS Gate-Source Voltage ±20 V ID Drain Current 3.4 A – Continuous (Note 1a) – Pulsed PD 10 Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 (Note 1c) TJ , TSTG W 1.1 –55 to +150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 458P FDT458P 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDT458P Rev. B(W) FDT458P June 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –24 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = –25 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –25 V, V DS = 0 V –100 nA –3 V On Characteristics –30 ID = –250 µA, Referenced to 25°C V –23 mV/°C (Note 2) V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance –1 –1.8 ID(on) On–State Drain Current V GS = –10 V, ID = –3.4 A V GS = –4.5 V, ID = –2.7 A V GS =–10 V, ID =–3.4 A, TJ =125°C V GS = –10 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –3.4 A 3 S V DS = –15 V, f = 1.0 MHz V GS = 0 V, 205 pF 55 pF 26 pF 4 105 157 147 mV/°C 130 200 210 –5 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) V DD = –15 V, V GS = –10 V, 4.5 9 ns 12.5 23 ns Turn–Off Delay Time 11 20 ns Turn–Off Fall Time 2 4 ns 2.5 3.5 nC V DS = –15 V, V GS = –10 V ID = –1 A, RGEN = 6 Ω ID = –3.4 A, 0.7 nC 1 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.5 A Voltage (Note 2) –0.8 –2.5 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when mounted on a 1in2 pad of 2 oz copper b) 95°C/W when mounted on a .0066 in2 pad of 2 oz copper c) 110°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDT458P Rev. B(W) FDT458P Electrical Characteristics FDT458P Typical Characteristics VGS = -10V -6.0V -5.0V V -4.5V 8 -ID , DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 10 -4.0V 6 4 -3.5V 2 -3.0V 0 1.8 V GS=-4.5V 1.6 -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V -10V 1 0.8 0 1 2 3 4 5 0 2 4 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.55 ID = -3.4A VGS = -10V ID = -1.7A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.7 1.5 1.3 1.1 0.9 0.7 0.45 0.35 T A = 125o C 0.25 T A = 25o C 0.15 0.05 -50 -25 0 25 50 75 100 125 150 175 2 4 T J, JUNCTION TEMPERATURE ( oC) 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 5 10 25o C T A = -55oC 4 -I S, REVERSE DRAIN CURRENT (A) V DS = -5V -ID, DRAIN CURRENT (A) 6 -ID, DRAIN CURRENT (A) 125oC 3 2 1 0 1.5 2 2.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 VGS =0V 1 TA = 125 oC 25o C 0.1 -55 oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDT458P Rev. B(W) FDT458P Typical Characteristics 300 ID = -3.4A V DS = -5V -10V f = 1 MHz V GS = 0 V 250 8 CISS -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 6 4 200 150 COSS 100 2 50 C RSS 0 0 0 1 2 3 4 5 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 200 10 100µ s R DS(ON) LIMIT 100ms 1 1s 10s DC V GS = -10V SINGLE PULSE RθJA = 110 oC/W 0.1 R θJ A = 110oC / W TA = 25o C 1m 10ms POWER (W) -I D, DRAIN CURRENT (A) SINGLE PULSE 160 120 80 40 TA = 25o C 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V D S, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 Rθ JA (t) = r(t) + R θ JA Rθ JA = 110 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - T A = P * R θ JA (t) Duty Cycle, D = t 1 / t 2 Single Pulse 0.001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDT458P Rev. B(W) 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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