FDU8770

LE A REE I DF M ENTATIO LE N MP FDD8770/FDU8770 N-Channel PowerTrench® MOSFET 25V, 35A, 4.0mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V „ Low gate resistance Application „ RoHS Compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G S Short Lead I-PAK I-PAK G D S (TO-251AA) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 210 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 407 113 mJ 115 W -55 to 175 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252,TO-251 1.3 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W 52 °C/W RθJA 2 Thermal Resistance, Junction to Ambient TO-252,1in copper pad area Package Marking and Ordering Information Device Marking FDD8770 Device FDD8770 Package TO-252AA Reel Size 13’’ Tape Width 12mm Quantity 2500 units FDU8770 FDU8770 TO-251AA N/A(Tube) N/A 75 units FDU8770 FDU8770_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8770/FDU8770 Rev. A 1 www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench® MOSFET March 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 13.6 1 TJ = 150°C 250 µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5.9 VGS = 10V, ID = 35A 3.3 4.0 VGS = 4.5V, ID = 35A 4.0 5.5 VGS = 10V, ID = 35A TJ = 175°C 4.8 5.9 2795 3720 pF 685 915 pF 450 675 pF rDS(on) Drain to Source On Resistance 1.2 1.6 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz Ω 1.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 13V, ID = 35A VGS = 10V, RGS = 5Ω VDD = 13V ID = 35A Ig = 1.0mA 10 20 ns 12 22 ns 49 78 ns 25 40 ns 52 73 nC 29 41 nC 8.1 nC 11 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 0.84 1.25 VGS = 0V, IS = 15A 0.79 1.0 IF = 35A, di/dt = 100A/µs 32 48 ns IF = 35A, di/dt = 100A/µs 25 38 nC V Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V. 2 FDD8770/FDU8770 Rev. A www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V ID, DRAIN CURRENT (A) 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.5V VGS = 3.5V 80 VGS = 3V 60 40 20 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 3 VGS = 3.5V 2 VGS = 4.5V 1 VGS = 10V 0 0 20 40 60 80 ID, DRAIN CURRENT(A) 100 120 12 1.8 ID = 35A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = 35A 10 8 TJ = 175oC 6 4 TJ = 25oC 2 2 Figure 3. Normalized On Resistance vs Junction Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 100 ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 4 80 TJ = 175oC 60 40 TJ = 25oC TJ = -55oC 20 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics 10 1 TJ = 175oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDD8770/FDU8770 Rev. A VGS = 0V www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 6000 Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 6 VDD = 13V 4 VDD = 16V 2 0 0 10 20 30 40 50 Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 60 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 250 TJ = 25oC 10 TJ = 125oC TJ = 150oC 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 10us 100 100us 10 1ms LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED 10ms DC TC = 25oC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 VGS = 4.5V 100 o RθJC = 1.3 C/W 50 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 20000 10000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 – T C ----------------------150 I = I25 1000 SINGLE PULSE 100 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDD8770/FDU8770 Rev. A VGS = 10V 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) 600 200 0 25 100 300 Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 50 0.1 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 13. Transient Thermal Response Curve 5 FDD8770/FDU8770 Rev. A www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19