FFD08S60S_F085

Rectifier – STEALTHt II 8 A, 600 V FFD08S60S-F085 The FFD08S60S−F085 is stealth 2 rectifier with soft recovery characteristics (trr < 30 ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • • • • • www.onsemi.com Cathode High Speed Switching (Max. trr < 30 ns @ IF = 8 A) High Reverse Voltage and High Reliability Avalanche Energy Rated AEC−Q101 Qualified and PPAP Capable Pb−Free and RoHS Compliant Cathode (Flange) Cathode Anode DPAK3 CASE 369AS Applications • • • • Anode General Purpose Switching Mode Power Supply Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Ratings Unit V VRRM Peak Repetitive Reverse Voltage 600 VRWM Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V VR IF(AV) Average Rectified Forward Current @ TC = 115°C 8 A IFSM Non−repetitive Peak Surge Current 60 Hz Single Half−Sine Wave 80 A −65 to + 150 °C TJ, TSTG Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol RθJC Maximum Thermal Resistance, Junction to Case Ratings Unit 3.0 °C/W $Y&Z&3&K F08S60S $Y &Z &3 &K F08S60S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION Device FFD08S60−F085 Package Shipping DPAK3 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 January, 2021 − Rev. 4 1 Publication Order Number: FFD08S60S−F085/D FFD08S60S−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VFM (Note 1) IF = 8 A, IF = 8 A TC = 25°C TC = 125°C − − 2.1 1.6 2.6 − V IRM (Note 1) VR = 600 V, VR = 600 V TC = 25°C TC = 125°C − − − − 100 500 mA trr IF = 1 A, di/dt = 100 A/ms, VR = 30 V TC = 25°C − − 25 ns trr IF = 8 A, di/dt = 200 A/ms, VR = 390 V TC = 25°C − 19 30 ns Irr − 2.2 − A S factor − 0.6 − − 21 − nC − 58 − ns Irr − 4.3 − A S factor − 1.3 − Qrr − 125 − nC 20 − − mJ Qrr trr TC = 125°C IF = 8 A, di/dt = 200 A/ms, VR = 390 V WAVL Avalanche Energy (L = 40 mH) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%. TEST CIRCUIT AND WAVEFORMS VGE Amplitude and RG Control dIF/dt t1 and t2 Control IF L DUT CURRENT SENSE RG VGE − IGBT t1 + 0 VDD trr dIF dt ta tb 0.25 IRM IRM t2 Figure 1. trr Test Circuit IMAX = 1 A L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) Q1 L CURRENT SENSE DUT Figure 2. trr Waveform and Definitions VAVL R + VDD IL IL I V VDD − t0 t1 t2 t Figure 4. Avalanche Current and Voltage Waveforms Figure 3. Avalanche Energy Test Circuit www.onsemi.com 2 FFD08S60S−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 1E−4 IR, Reverse Current (A) IF, Forward Current (A) 100 TC = 125°C 10 TC = 75°C 1 TC = 25°C 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 1E−5 1E−6 TC = 75°C 1E−7 TC = 25°C 1E−8 1E−9 3.2 TC = 125°C 0 100 200 VF, Forward Voltage (V) Figure 5. Typical Forward Voltage Drop 100 f = 1 MHz 90 80 70 60 50 40 30 20 10 0 1 10 100 TC = 125°C 70 60 50 40 TC = 75°C 30 20 TC = 25°C 10 0 100 1000 200 IF(AV), Average Forward Current (A) Irr, Reverse Recovery Current (A) 7 TC = 125°C 4 TC = 25°C 3 2 TC = 75°C 1 0 100 200 300 400 500 Figure 8. Typical Reverse Recovery Time 8 5 300 di/dt (A/ms) IF = 8 A 6 600 80 Figure 7. Typical Junction Capacitance 9 500 IF = 8 A 90 VR, Reverse Voltage (V) 10 400 Figure 6. Typical Reverse Current trr, Reverse Recovery Time (ns) CJ, Junction Capacitance (pF) 100 300 VR, Reverse Voltage (V) 400 500 12 11 10 9 8 7 6 5 4 3 2 1 0 100 DC 110 120 130 140 150 di/dt (A/ms) TC, Case Temperature (5C) Figure 9. Typical Reverse Recovery Current Figure 10. Forward Current Deration Curve STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE A DATE 28 SEP 2022 GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AYWWZZ XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code DOCUMENT NUMBER: DESCRIPTION: *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 98AON13810G DPAK3 (TO−252 3 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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