FGA15N120ANTDTU-F109

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Other names and brands may be claimed as the property of others. 1200 V, 15 A NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. • Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C • Extremely Enhanced Avalanche Capability C G TO-3P E G C E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage  20 V IC Collector Current @ TC = 25C 30 A Collector Current @ TC = 100C 15 A 45 A 30 A ICM IF IFM PD Pulsed Collector Current (Note 1) Diode Continuous Forward Current @ TC = 25C Diode Continuous Forward Current @ TC = 100C Diode Maximum Forward Current 15 A 45 A Maximum Power Dissipation @ TC = 25C 186 W Maximum Power Dissipation @ TC = 100C 74 W TJ Operating Junction Temperature -55 to +150 C Tstg Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C Thermal Characteristics Typ. Max. Unit RJC Symbol Thermal Resistance, Junction-to-Case for IGBT Parameter -- 0.67 C/W RJC Thermal Resistance, Junction-to-Case for Diode -- 2.88 C/W RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature ©2006 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FGA15N120ANTDTU/D FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU Part Number Top Mark Package Packing Method FGA15N120ANTDTU-F109 FGA15N120ANTDTU TO-3P Tube Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tape Width Quantity N/A N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 250 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 15 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 15 A, 4.5 6.5 8.5 V VGE = 15 V -- 1.9 2.4 V IC = 15 A, VGE = 15 V, TC = 125C -- 2.2 -- V IC = 30 A, -- 2.3 -- V -- 2650 -- pF -- 143 -- pF -- 96 -- pF VGE = 15 V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VCC = 600 V, IC = 15 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25C VCC = 600 V, IC = 15 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 125C -- 15 -- ns -- 20 -- ns -- 160 -- ns -- 100 180 ns -- 3 4.5 mJ -- 0.6 0.9 mJ -- 3.6 5.4 mJ -- 15 -- ns -- 20 -- ns -- 170 -- ns tf Fall Time -- 150 -- ns Eon Turn-On Switching Loss -- 3.2 4.8 mJ Eoff Turn-Off Switching Loss -- 0.8 1.2 mJ Ets Total Switching Loss -- 4.0 6.0 mJ Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCE = 600 V, IC = 15 A, VGE = 15 V www.onsemi.com 2 -- 120 180 nC -- 16 22 nC -- 50 65 nC FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Package Marking and Ordering Information C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1.7 2.7 V VFM Diode Forward Voltage IF = 15 A TC = 25C -- TC = 125C -- 1.8 -- trr Diode Reverse Recovery Time IF = 15 A diF/dt = 200 A/s TC = 25C -- 210 330 TC = 125C -- 280 -- Irr Diode Peak Reverse Recovery Current TC = 25C -- 27 40 TC = 125C -- 31 -- Qrr Diode Reverse Recovery Charge TC = 25C -- 2835 6600 TC = 125C -- 4340 -- www.onsemi.com 3 ns A nC FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 200 150 o T C = 25 C Common Emitter VGE = 15V 20V 17V 15V o 12V TC = 25 C 120 o 150 Collector Current , IC [A] Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics V GE = 10V 100 50 TC = 125 C 90 60 30 0 0 2 4 6 8 0 10 0 2 Collector-Emitter Voltage, V CE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter V GE = 15V Common Emitter o T C = 25 C 16 IC = 24A 2.5 IC = 15A 2.0 12 8 4 24A 50 75 100 125 0 150 4 Case Temperature, TC [ C] Figure 5. Saturation Voltage vs. VGE 12 16 20 Figure 6. Capacitance Characteristics 3500 Common Emitter o TC = 125 C 3000 Ciss 2500 12 Capacitance [pF] Collector-Emitter Voltage, VCE [V] 8 Gate-Emitter Voltage, V GE [V] o 16 15A I C = 7.5A 0 1.5 25 6 Figure 4. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.0 4 Collector-Emitter Voltage, VCE [V] 8 4 24A 15A 2000 o 0 4 8 T C = 25 C 1000 Coss 500 IC = 7.5A 0 Common Emitter VGE = 0V, f = 1MHz 1500 Crss 0 12 16 0.1 20 1 10 Collector-Emitter Voltage, VCE[V] Gate-Emitter Voltage, V GE [V] www.onsemi.com 4 FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 7. Turn-On Characteristics vs. Gate Resistance Figure 8. Turn-Off Characteristics vs. Gate Resistance 100 Common Emitter V CC = 600V, V GE = 15V IC = 15A 1000 td(off) o T C = 25 C 10 o T C = 125 C Switching Time [ns] Switching Time [ns] tr td(on) Common Emitter V CC = 600V, V GE = 15V 100 tf IC = 15A o T C = 25 C o T C = 125 C 10 1 0 0 10 20 30 40 50 60 10 20 70 Gate Resistance, RG[ ] Figure 9. Switching Loss vs. Gate Resistance 50 60 70 Common Emitter V GE = 15V, R G = 10  o T C = 25 C 100 IC = 15A o T C = 125 C o T C = 25 C Switching Time [ns] o Switching Loss [mJ] 40 Figure 10. Turn-On Characteristics vs. Collector Current Common Emitter V CC = 600V, V GE = 15V 10 30 Gate Resistance, R G [ ] T C = 125 C Eon Eoff tr td(on) 10 1 0 10 20 30 40 50 60 10 70 15 Gate Resistance, R G [ ] Figure 11. Turn-Off Characteristics vs. Collector Current 30 Common Emitter VGE = 15V, RG = 10 o o T C = 25 C T C = 25 C 10 o T C = 125 C Eon o T C = 125 C td(off) Switching Loss [mJ] Switching Time [ns] 25 Figure 12. Switching Loss vs. Collector Current Common Emitter V GE = 15V, R G = 10  100 tf 10 10 20 Collector Current, IC [A] 15 20 25 30 Eoff 1 0.1 5 Collector Current, IC [A] 10 15 20 Collector Current, IC [A] www.onsemi.com 5 25 30 FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Gate Charge Characteristics Figure 14. SOA Characteristics 15 Common Emitter RL = 40  10 0 Ic M A X (P u lse d) 50s Ic M A X (C o n tinu o us ) Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o T C = 25 C 12 600V 9 400V 6 Vcc = 200V 3 0 1 00  s 10 1m s D C O p e ra tio n 1 S in g le N on re p etitive o P u lse T c = 25 C C urves m u st b e de rate d lin ea rly w ith incre ase in te m pe ratu re 0.1 0 .0 1 0 20 40 60 80 100 120 0.1 1 10 10 0 C o lle c to r - E m itte r V o lta g e , V C E [V ] Gate Charge, Qg [nC] Figure 15. Turn-Off SOA 10 Safe Operating Area o V GE = 15V, T C = 125 C 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 16. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] Collector Current, IC [A] 100 1 0.5 0.1 0.2 0.1 0.05 0.01 Pdm 0.02 t1 0.01 t2 single pulse 1E-3 1E-5 1E-4 Duty factor D = t1 / t2 Peak Tj = Pdm  Zthjc + TC 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] www.onsemi.com 6 1 10 10 00 FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current 50 30 Reverse Recovery Currnet , Irr [A] Forward Current , IF [A] diF/dt = 200A/s 10 o TJ = 125 C o TJ = 25 C 1 o TC = 125 C o TC = 25 C 0.1 25 20 15 diF/dt = 100A/s 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 5 Forward Voltage , VF [V] Figure 19. Stored Charge 20 25 400 diF/dt = 200A/s Reverse Recovery Time , trr [ns] Stored Recovery Charge , Qrr [nC] 15 Figure 20. Reverse Recovery Time 7000 6000 10 Forward Current , IF [A] 5000 diF/dt = 100A/s 4000 3000 2000 1000 300 diF/dt = 100A/s 200 diF/dt = 200A/s 100 0 0 5 10 15 20 5 25 Forward Current , IF [A] 10 15 Forward Current , IF [A] www.onsemi.com 7 20 25 FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Typical Performance Characteristics FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT Mechanical Dimensions Figure 21. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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