FODM3083

DATA SHEET www.onsemi.com 4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output Optocouplers MFP4 3.85X4.4, 2.54P CASE 100AP FODM3063, FODM3083 MARKING DIAGRAM Description The FODM3063 and FODM3083 series consist of an infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver, and is housed in a compact 4−pin mini−flat package. The lead pitch is 2.54 mm. They are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 VAC lines, such as solid state relays, industrial controls, motors, solenoids and consumer appliances. Features 3063 VXYYR 3063 = Device Number V = DIN EN/IEC60747−5−5 Option (Only Appears on Component Ordered with this Option) X = One−Digit Year Code, e.g., “6” YY = Digit Work Week, Ranging from “01” to “53” R = Assembly Package Code • Critical Rate of Rise of Off−Stage Voltage • • • • • ♦ dv/dt of 600 V/ms Guaranteed Zero Voltage Crossing Peak Blocking Voltage ♦ 600 V (FODM3063) ♦ 800 V (FODM3083) Compact 4−Pin Surface Mount Package ♦ 2.4 mm Maximum Standoff Height Safety Regulatory Approvals: ♦ UL1577, 3,750 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage These are Pb−Free Devices Applications • • • • • • • • July, 2022 − Rev. 2 ANODE 1 CATHODE 2 4 MAIN TERM. ZERO CROSSING CIRCUIT 3 MAIN TERM. ORDERING INFORMATION Solenoid/Valve Controls Lighting Controls Static Power Switches AC Motor Drives Temperature Controls E.M. Contactors AC Motor Starters Solid State Relays © Semiconductor Components Industries, LLC, 2006 FUNCTIONAL SCHEMATIC See detailed ordering and shipping information on page 9 of this data sheet. 1 Publication Order Number: FODM3083/D FODM3063, FODM3083 SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥5 mm External Clearance ≥5 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm TS Case Temperature (Note 1) 150 °C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W RIO 1. Safety limit values – maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit TSTG Storage Temperature −55 to +150 °C TOPR Operating Temperature −40 to +100 °C Junction Temperature −40 to +125 °C Lead Solder Temperature 260 for 10 s °C TJ TSOL Parameter EMITTER IF (avg) Continuous Forward Current 60 mA IF (pk) Peak Forward Current (1 ms Pulse, 300 pps.) 1 A Reverse Input Voltage 6 V 100 mW 1 A(PEAK) VR PD(EMITTER) Power Dissipation (No Derating Required over Operating Temp. Range) DETECTOR ITSM Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) IT(RMS) On−State RMS Current VDRM Off−State Output Terminal Voltage PD(DETECTOR) 70 mA(RMS) FODM3063 600 V FODM3083 800 V 300 mW Power Dissipation (No Derating Required over Operating Temp. Range) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 FODM3063, FODM3083 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS EMITTER VF Input Forward Voltage IF = 30 mA − − 1.50 V IR Reverse Leakage Current VR = 6 V − − 100 mA DETECTOR IDRM Peak Blocking Current Either Direction Rated VDRM, IF = 0 (Note 2) dv/dt Critical Rate of Rise of Off−State Voltage IF = 0 (Note 3) − − 500 nA 600 − − V/ms − − 5 mA − 300 − mA IF = Rated IFT, ITM = 100 mA peak − − 3 V Inhibit Voltage, MT1−MT2 Voltage above which Device will not Trigger IFT = Rated IFT − − 20 V Leakage in Inhibit State IFT = Rated IFT, Rated VDRM, Off−State − − 2 mA 3,750 − − VACRMS TRANSFER CHARACTERISTICS IFT LED Trigger Current IH Holding Current, Either Direction VTM Peak On−State Voltage, Either Direction Main Terminal Voltage = 3 V (Note 4) ZERO CROSSING CHARACTERISTICS VIH IDRM2 ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage (Note 5) 1 Minute, R.H. = 40% to 60% Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. Commutating dv/dt is function of the load−driving thyristor(s) only. 4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (5 mA) and absolute max IF (60 mA). 5. Steady state isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 & 2 are common, and pins 3 & 4 are common. www.onsemi.com 3 FODM3063, FODM3083 TYPICAL PERFORMANCE CHARACTERISTICS 1000 1.8 VDRM = 600 V IDRM, LEAKAGE CURRENT (nA) VF, FORWARD VOLTAGE (V) 1.7 1.6 1.5 TA= −40°C 1.4 1.3 1.2 TA= 25°C 1.1 TA= 100°C 1.0 10 10 1 0.1 −40 0.9 1 100 100 IF, FORWARD CURRENT (mA) 20 40 60 80 100 Figure 2. Leakage Current vs. Ambient Temperature 1.6 10 NORMALIZED TO TA = 25°C IFT, TRIGGER CURRENT (NORMALIZED) IH, HOLDING CURRENT (NORMALIZED) 0 TA, AMBIENT TEMPERATURE (°C) Figure 1. LED Forward Voltage vs. Forward Current 1.0 0.1 −40 −20 −20 0 20 40 60 80 1.4 1.2 1.0 0.8 0.6 0.8 −40 100 VTM = 3 V NORMALIZED TO TA = 25°C −20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Holding Current vs. Ambient Temperature Figure 4. Trigger Current vs. Ambient Temperature www.onsemi.com 4 FODM3063, FODM3083 1.4 12 10 VDRM, OFF−STATE OUTPUT TERMINAL VOLTAGE (NORMALIZED) TA= 25°C NORMALIZED TO PWIN >> 100 ms 8 6 4 2 1 10 NORMALIZED TO TA = 25°C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −40 0 100 −20 PWIN, LED TRIGGER PULSE WIDTH (°C) 0 TA= 25°C 600 400 200 0 −200 −400 −600 −3 40 60 80 100 Figure 6. Off−State Output Terminal Voltage vs. Ambient Temperature 800 −800 −4 20 TA, AMBIENT TEMPERATURE (°C) Figure 5. LED Current Required to Trigger vs. LED Pulse Width ITM, ON−STATE CURRENT (mA) IFT, LED TRIGGER CURRENT (NORMALIZED) TYPICAL PERFORMANCE CHARACTERISTICS (continued) −2 −1 0 1 2 VTM, ON−STATE VOLTAGE (V) Figure 7. On−State Characteristics www.onsemi.com 5 3 4 FODM3063, FODM3083 TYPICAL APPLICATION INFORMATION 240 VAC R1 1 VCC D1 4 SCR FODM3063 FODM3083 Rin 2 Suggested method of firing two, back−to−back SCR’s, with a onsemi triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 ohms. 3 SCR 360 W R2 D2 LOAD NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. Figure 8. Inverse−Parallel SCR Driver Circuit (240 VAC) www.onsemi.com 6 FODM3063, FODM3083 DETERMINING THE POWER RATING OF THE SERIES RESISTORS USED IN A ZERO−CROSS OPTO−TRIAC DRIVER APPLICATION The power dissipated from resistors placed in series with the opto−TRIAC and the gate of the power TRIAC is much smaller than one would expect. These current handling components only conduct current when the mains voltage is less than the maximum inhibit voltage. If the opto−TRIAC is triggered when the mains voltage is greater than the inhibit voltage, only the TRIAC leakage current will flow. The power dissipation in a 360 W resistor shown in Figure 9 is the product of the resistance (360 W) times the square of the current sum of main TRIAC’s gate current plus the current flowing gate to the MT2 resistor connection (330 W). This power calculation is further modified by the duty factor of the duration for this current flow. The duty factor is the ratio of the turn−on time of the main TRIAC to the sine of the single cycle time. Assuming a main TRIAC turn−on time of 50 ms and a 60 Hz mains voltage, the duty cycle is approximately 0.6 %. The opto−TRIAC only conducts current while triggering the main TRIAC. Once the main TRIAC fires, its on−state voltage is typically lower than the on−state sustaining voltage of the opto−TRIAC. Thus, once the main TRIAC fires, the opto−TRIAC is often shunted off. This situation results in very low power dissipation for both the 360 W and 330 W resistors, when driving a traditional four quadrant power TRIAC. If a three quadrant “snubberless” TRIAC is driven by the opto−TRIAC, the calculations are different. When the main power TRIAC is driving a high power factor (resistive) load, it shuts off during the fourth quadrant. The following will present the calculations for determining the power dissipation of the current limiting resistors found in an opto−TRIAC driver interface. Figure 9 shows a typical circuit to drive a sensitive gate four quadrant power TRIAC. This figure provides typical resistor values for a zero line cross detecting opto−TRIAC when operated from a mains voltage of 20 V to 240 V. The wattage rating for each resistor is not given because their dissipation is dependent upon characteristics of the power TRIAC being driven. Recall that the opto−TRIAC is used to trigger a four quadrant power TRIAC. Please note that these opto−TRIACs are not recommended for driving “snubberless” three quadrant power TRIACs. Under normal operation, the opto−TRIAC will fire when the mains voltage is lower than the minimum inhibit trigger voltage, and the LED is driven at a current greater than the maximum LED trigger current. As an example for the FODM3063, the LED trigger current should be greater than 5 mA, and the mains voltage is less than 10 V peak. The inhibit voltage has a typical range of 10 V minimum and 20 V maximum. This means that if a sufficient LED current is flowing when the mains voltage is less than 10 V, the device will fire. If a trigger appears between 10 V and 20 V, the device may fire. If the trigger occurs after the mains voltage has reached 20 Vpeak, the device will not fire. VCC Rin 1 4 360 W FODM3063 FODM3083 2 HOT 39 W* 3 240 VAC 0.01 mH 350 W LOAD Typical circuit for use when hot line switching of 240 VAC is required. In this circuit the “hot” side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. Rin is calculated so that IF is equal to the rated IFT of the part, 5 mA. The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load used. NEUTRAL *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. Figure 9. Hot−Line Switching Application Circuit A 1/4 watt resistor is more than adequate for both the 360 W and 330 W resistors. The real power in the snubber resistor is based upon the integral of the power transient present when the load commutes. A fast commuting transient may allow a peak current of 4 A to 8 A in the snubbing filter. For best results, the capacitor should be a non−polarized AC unit with a low ESR. The 39 W series resistor sets a time constant and limits the peak current. For a resistive load with a power factor near unity, the commutating transients will be small. This results in a very small peak current given the 0.01 mF capacitor’s reactance. Normally, for factional horse−power reactive loads, the resistor found in the snubber circuit will have a power rating from 1/2 W to 2 W. The resistor should be a low inductance type to adequately filter the high frequency transients. If sufficient holding current is still flowing through the opto−TRIAC, the opto−TRIAC will turn−on and attempt to carry the power TRIACs load. This situation typically causes the opto−TRIAC to operate beyond its maximum current rating, and product and resistor failures typically result. For this reason, using an opto−TRIAC to drive a three quadrant “snubberless” power TRIAC is not recommended. Power in the 360 Ω resistor, when driving a sensitive gate 4 quadrant power TRIAC: IGT = 20 mA VGT = 1.5 V DF = 0.6 % P = (IGT +VGT / 330 W)2 x 360 W x DF P = (20 mA + 1.5 / 330 Ω)2 *x 360 W x 0.6 % = 1.3 mW www.onsemi.com 7 FODM3063, FODM3083 REFLOW PROFILE 260 240 220 TP Max. Ramp−up Rate = 3°C/S Max. Ramp−down Rate = 6°C/S tP TL 200 Tsmax Temperature (°C) 180 160 tL Preheat Area Tsmin 140 ts 120 100 80 60 40 20 0 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 – 120 seconds Ramp−up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. Figure 10. Reflow Profile www.onsemi.com 8 FODM3063, FODM3083 ORDERING INFORMATION Package Shipping† FODM3063 Full Pitch Mini−Flat 4−Pin 100 Units / Tube FODM3063R2 Full Pitch Mini−Flat 4−Pin 2500 Units / Tape & Reel FODM3063V Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube FODM3063R2V Full Pitch Mini−Flat 4−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel Part Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NOTE: The product orderable part number system listed in this table also applies to the FODM3083 products. FOOTPRINT DRAWING FOR PCB LAYOUT 0.80 1.00 6.50 2.54 NOTE: All dimensions are in mm. Figure 11. Footprint Drawing for PCB Layout www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MFP4 3.85X4.4, 2.54P CASE 100AP ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13488G MFP4 3.85X4.4, 2.54P DATE 31 AUG 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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