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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FPAM50LH60
PFC SPM® 2 Series for 2-Phase Interleaved PFC
Features
General Description
• UL Certified No.E209024 (UL1557)
The FPAM50LH60 is a PFC SPM® 2 module providing a
fully-featured, high-performance Interleaved PFC (Power
Factor Correction) input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockout, over-current shutdown, thermal monitoring,
and fault reporting. These modules also feature a fullwave rectifier and high-performance output diodes for
additional space savings and mounting convenience.
• 600 V - 50 A 2-Phase Interleaved PFC with Integral
Gate Driver and Protection
• Very Low Thermal Resistance Using Al2O3 DBC Substrate
• Full-Wave Bridge Rectifier and High-Performance
Output Diode
• Optimized for 20kHz Switching Frequency
• Built-in NTC Thermistor for Temperature Monitoring
• Isolation Rating: 2500 Vrms/min
Applications
• 2-Phase Interleaved PFC Converter
Fig. 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FPAM50LH60
FPAM50LH60
S32EA-032
Rail
8
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
1
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
June 2015
• For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
• Fault signal: corresponding to OC and UV fault
• Built-in thermistor: temperature monitoring
• Input interface : active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
(1)CSC
(2)COM
(3)VFO
(4)INX
(5)INY
(6)COM
(7)n.c.
(8)VCC
(9)VCC
(10)COM
(24)P
(25)P
(26)PY
(27)n.c.
(28)PX
(11)RTH
(12)VTH
(29)X
(13)NR
(14)NR
(30)Y
(15)n.c.
(16)n.c.
(17)n.c.
(31)NP
Case temperature(TC)
detecting point
(18)R
(19)R
(20)n.c.
(21)n.c.
(32)PR
(22)S
(23)S
Dimension unit: millimeter
Figure 2. Top View
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
2
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Integrated Drive, Protection and System Control Functions
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
CSC
2,6,10
COM
Common Supply Ground
3
VFO
Fault Output
4
INX
PWM Input for X IGBT Drive
5
INY
PWM Input for Y IGBT Drive
Signal Input for Over-Current Detection
7
N.C
No Connection
8,9
VCC
Common Supply Voltage of IC for IGBT Drive
11
RTH
Series Resistor for The Use of Thermistor
12
VTH
Thermistor Bias Voltage
13,14
NR
Negative DC-Link of Rectifier Diode
15,16,17
N.C
No Connection
18,19
R
20,21
N.C
AC Input for R-Phase
22,23
S
AC Input for S-Phase
24,25
P
Output of Diode
No Connection
26
PY
Input of Diode
27
N.C
No Connection
28
PX
Input of Diode
29
X
Output of X Phase IGBT
30
Y
Output of Y Phase IGBT
31
NP
Negative DC-Link of IGBT
32
PR
Positive DC-Link of Rectifier Diode
Internal Equivalent Circuit
(11)RTH
(24)(25)P
THERMISTOR
(12)VTH
(1)CSC
(3)VFO
(4)INX
(5)INY
(8)(9)VCC
(2)(6)(10)
COM
(26)PY
(28)PX
CSC
(29)X
VFO
(30)Y
INX
INY
OUT X
(32)PR
VCC
(18)(19)R
OUT Y
(22)(23)S
COM
(31)NP
(13)(14)NR
Figure 3. Internal Block Diagram
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
3
www.fairchildsemi.com
Converter Part
Symbol
Vi
VPN
Parameter
Conditions
Rating
Unit
Input Supply Voltage
Applied between R - S
264
Vrms
Output Voltage
Applied between X - NP, Y - NP, P - PX, P - PY
450
V
Output Supply Voltage (Surge)
Applied between X - NP, Y - NP, P - PX, P - PY
500
V
VCES
Collector-emitter Voltage
Breakdown Voltage between X - NP, Y - NP
600
V
VRRM
Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P - PX, P - PY
600
V
VRRMR
Repetitive Peak Reverse Voltage of Rec- Breakdown Voltage between PR - R, PR - S,
tifier
R - NR, S - NR
900
V
VPN(Surge)
*IF
*IFSM
*IFR
FRD Forward Current
TC = 25°C, TJ < 125°C
50
A
Peak Surge Current of FRD
Non-Repetitive, 60 Hz Single Half-Sine Wave
500
A
Rectified Forward Current
TC = 25°C, TJ < 125°C
50
A
Peak Surge Current of Rectifier
Non-Repetitive, 60 Hz Single Half-Sine Wave
500
A
± *IC
Each IGBT Collector Current
TC = 25°C, TJ < 125°C
50
A
± *ICP
Each IGBT Collector Current(Peak)
TC = 25°C, TJ < 125°C,
Under 1 ms Pulse Width
100
A
*IFSMR
*PC
TJ
Collector Dissipation
TC = 25°C per IGBT
Operating Junction Temperature
(1st Note 1)
135
W
-40 ~ 125
°C
1st Notes:
1. The maximum junction temperature rating of the power chips integrated within the PFC SPM® product is 125°C.
2. Marking “ * “ is calculation value or design factor.
Control Part
Symbol
Parameter
Conditions
Rating
Unit
VCC
Control Supply Voltage
Applied between VCC - COM
20
V
VIN
Input Signal Voltage
Applied between INX, INY - COM
-0.3 ~ VCC + 0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3 ~ VCC + 0.3
V
IFO
Fault Output Current
Sink Current at VFO Pin
1
mA
VSC
Current Sensing Input Voltage Applied between CSC - COM
-0.3 ~ VCC + 0.3
V
Total System
Symbol
Parameter
TSTG
Storage Temperature
VISO
Isolation Voltage
Conditions
Rating
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat-Sink Plate
Unit
-40 ~ 125
°C
2500
Vrms
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)D
Parameter
Junction to Case Thermal
Resistance
Rth(j-c)R
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
Condition
Each IGBT under Operating Condition
Min.
-
Typ. Max.
-
0.74
Unit
°C/W
Each Diode under Operating Condition
-
-
1.13
°C/W
Each Rectifier under Operating Condition
-
-
0.74
°C/W
4
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Converter Part
Symbol
VCE(SAT)
Parameter
Conditions
Min.
Typ.
Max.
Unit
IGBT Saturation Voltage
VCC = 15 V, VIN = 5 V, IC = 50 A
-
1.7
2.2
V
VFF
FRD Forward Voltage
IF = 50 A
-
1.9
2.4
V
VFR
Rectifier Forward Voltage
IFR = 50 A
-
1.13
1.35
V
IRR
Switching Characteristic
VPN = 400 V, VCC = 15 V, IC = 25 A,
VIN = 0 V 5 V, Inductive Load (1st Note 3),
per IGBT
-
27
-
A
tRR
-
55
-
ns
tON
-
772
-
ns
tOFF
-
1117
-
ns
tC(ON)
-
110
-
ns
-
125
-
ns
-
-
250
A
tC(OFF)
ICES
Collector - Emitter
Leakage Current
VCES = 600 V
1st Notes:
3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% IC
tRR
100% IC
IRR
VCE
IC
90% IC
10% IC
10% VCE
10% VCE
10% IC
VIN
tON
tOFF
tC(OFF)
tC(ON)
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
5
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IQCC
Quiescent VCC Supply
Current
VCC = 15 V, INX, INY - COM = 0 V, Supply current
between VCC and COM
-
-
2.65
mA
IPCC
Operating VCC Supply
Current
VCC = 15 V, fPWM = 20 kHz, Duty = 50%
Applied to One PWM Signal Input per IGBT
Supply Current between VCC and COM
-
-
7.0
mA
VFOH
Fault Output Voltage
VSC = 0 V, VFO Circuit: 10 k to 5 V Pull-up
4.5
-
-
V
-
-
0.5
V
VSC(Ref)
Over-Current Protection Trip VCC = 15 V
Level Voltage of CSC Pin
VSC = 1 V, VFO Circuit: 10 k to 5 V Pull-up
0.45
0.5
0.55
V
UVCCD
Supply Circuit UnderVoltage Protection
Detection Level
10.5
-
13.0
V
Reset Level
11.0
-
13.5
V
30
-
-
s
VFOL
UVCCR
tFOD
Fault-Out Pulse Width
VIN(ON)
ON Threshold Voltage
Applied between INX, INY - COM
2.6
-
-
V
VIN(OFF)
OFF Threshold Voltage
Applied between INX, INY - COM
-
-
0.8
V
Resistance of Thermistor
at TTH = 25°C (1st Note 4, Figure 5)
-
47
-
k
at TTH = 100°C (1st Note 4, Figure 5)
-
2.9
-
k
RTH
1st Notes:
4. TTH is the temperature of thermister itself. To know case temperature ( TC), please make the experiment considering your application.
R-T Curve
200
4
Resistance RTH[k]
Resistance RTH[k]
150
100
3
2
1
95
100
105
110
115
120
125
o
Temperature TTH[ C]
50
0
0
25
50
75
100
125
o
Temperature TTH[ C]
Figure 5. R-T Curve of The Built-in Thermistor
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
6
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Control Part
Symbol
Parameter
Conditions
Vi
Input Supply Voltage
Applied between R - S
Ii
Input Current
TC < 100°C, Vi = 220 V, VO = 360 V,
fPWM = 20 kHz per IGBT
VPN
Supply Voltage
Applied between X - NP, Y - NP, P - PX, P - PY
VCC
Control Supply Voltage
Applied between VCC - COM
dVCC/dt
IFO
fPWM
Supply Variation
Min.
Typ.
Max.
Unit
187
-
253
Vrms
-
-
35
Arms
-
-
400
V
13.5
15.0
16.5
V
-1
-
1
V/s
Fault Output Current
Sink Current at VFO Pin
-
-
1
mA
PWM Input Frequency
-40°C < TJ < 125°C per IGBT
-
20
-
kHz
Mechanical Characteristics and Ratings
Parameter
Conditions
Mounting Torque
Mounting Screw: M4
Device Flatness
See Figure 6
Min.
Typ.
Max.
Unit
0.78
0.98
1.17
N•m
Recommended 0.98 N•m
Recommended 10 kg•cm
Weight
8
10
12
kg•cm
0
-
+150
m
-
32
-
g
Figure 6. Flatness Measurement Position
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
7
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Recommended Operating Conditions (TJ = 25°C, unless otherwise specified.)
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVCCR
a1
Control
Supply Voltage
a6
UVCCD
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 7. Under-Voltage Protection
(with the external over current detection circuit)
c1 : Normal operation: IGBT ON and carrying current.
Input Voltage (VIN)
c6
c7
c2 : Over-current detection (OC trigger).
c3 : Hard IGBT gate interrupt.
Internal IGBT
Gate-Emitter Voltage
c4
c4 : IGBT turns OFF.
c3
c5 : Fault output timer operation starts.
c2
c6 : Input “LOW”: IGBT OFF state.
OC
c7 : Input “HIGH”: IGBT ON state, but during the active period
of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state.
c1
c8
Output Current
Input signal to CSC
pin for Protection
Fault Output Signal
SET
RESET
c5
Figure 8. Over-Current Protection
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
8
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Time Charts of Protective Function
Current sensing
RT
current protection
R TH
P
THERMISTOR
V TH
+5 V
RSCF
MCU /
Controller
RFO
CSCF
PX
PY
CSC
X
VFO
CF
RF
CF
RF
Y
L
INX
L
OUT X
INY
+15 V
VCC
VDC
PR
R
OUT Y
VAC
S
COM
DY
NP
DX
NR
Figure 9. Typical Application Circuit
2nd Notes:
1. To avoid malfunction, the wiring of each input should be as short as possible(less than 2 ~ 3 cm).
2. VFO output is open-drain type. This signal line should be pulled up to the positive-side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.
3. Input signal is active-HIGH type. There is a 5 kΩ resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RFCF constant should be selected in the range 50~150ns (recommended RF = 100 Ω , CF = 1 nF).
4. To prevent error of the protection function, the wiring related with RSCF and CSCF should be as short as possible.
5. In the over current protection circuit, please select the RSCF , CSCF time constant in the range 1.5 ~ 2 μs.
6. Each capacitors should be mounted as close to the PFC SPM® product pins as possible.
7. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the MCU / controller and the
relays.
8. Internal NTC thermistor can be used for monitoring of the case temperature and protecting the device from the overheating operation. Select an appropriate resistor RT according to the application.
9. It is recommended that anti-parallel diode (DX ,DY) be connected with each IGBT.
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
9
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
+5 V
Input signal for over
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD32BA.pdf
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
10
www.fairchildsemi.com
FPAM50LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. 1.4
11
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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