STU60N3LH5

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω 48 A DPAK, IPAK, TO-220 , STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 ■ ■ ■ ■ ■ VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 3 48 A 48 A TO-220 1 2 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 3 1 3 2 DPAK IPAK Application Figure 1. ■ Internal schematic diagram Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Marking 60N3LH5 60N3LH5 60N3LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5 April 2009 Doc ID 14079 Rev 3 1/16 www.st.com 16 Contents STD60N3LH5, STP60N3LH5, STU60N3LH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VDS VGS ID (1) ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Drain-source voltage (VGS = 0) @ TJMAX Gate-Source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 30 35 ± 22 48 42.8 192 60 0.4 160 -55 to 175 Unit V V V A A A W W/°C mJ °C PTOT (3) EAS Single pulse avalanche energy Operating junction temperature Storage temperature Tj Tstg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V Table 3. Symbol Rthj-case Rthj-amb Tj Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose Value 2.5 100 275 Unit °C/W °C/W °C Doc ID 14079 Rev 3 3/16 Electrical characteristics STD60N3LH5, STP60N3LH5, STU60N3LH5 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) Static Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 µA, VGS= 0 VDS = 30 V VDS = 30 V,Tc = 125 °C VGS = ± 22 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 24 A SMD version 1 1.8 0.0072 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω 3 0.008 RDS(on) Static drain-source on resistance VGS= 10 V, ID= 24 A VGS= 5 V, ID= 24 A SMD version VGS= 5 V, ID= 24 A 0.0076 0.0084 0.0088 0.011 0.0092 0.0114 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Test conditions Min. Typ. 1350 265 32 8.8 4.7 2.2 2.2 2.5 nC Max. Unit pF pF pF nC nC nC nC VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 48 A VGS =5 V (Figure 14) VDD=15 V, ID = 48 A VGS =5 V (Figure 19) f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain - - - - RG Gate input resistance - 1.1 - Ω 4/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Electrical characteristics Table 6. Symbol Switching on/off (resistive load) Parameter Test conditions VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time - 6 33 - ns ns td(off) tf Turn-off delay time Fall time - 19 4.2 - ns ns Table 7. Symbol ISD ISDM VSD trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed)(1) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=24 A, VGS=0 ISD=48 A, di/dt =100 A/µs, VDD=20 V, (Figure 15) Test conditions Min. 25 18.5 1.5 Typ. Max. 48 192 1.1 Unit A A V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14079 Rev 3 5/16 Electrical characteristics STD60N3LH5, STP60N3LH5, STU60N3LH5 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. ID (A) 70 60 50 40 30 20 10 0 0 Transfer characteristics AM03360v1 1 2 3 VGS(V) Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 14079 Rev 3 7/16 Test circuits STD60N3LH5, STP60N3LH5, STU60N3LH5 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Figure 19. Gate charge waveform Test circuits Doc ID 14079 Rev 3 9/16 Package mechanical data STD60N3LH5, STP60N3LH5, STU60N3LH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H Doc ID 14079 Rev 3 11/16 Package mechanical data STD60N3LH5, STP60N3LH5, STU60N3LH5 TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 12/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 Doc ID 14079 Rev 3 13/16 Packaging mechanical data STD60N3LH5, STP60N3LH5, STU60N3LH5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 Doc ID 14079 Rev 3 STD60N3LH5, STP60N3LH5, STU60N3LH5 Revision history 6 Revision history Table 8. Date 19-Oct-2007 23-Sep-2008 20-Apr-2009 Document revision history Revision 1 2 3 First release VGS value has been changed on Table 2 and Table 5 – Inserted typical adn maximum value in VGS(th) parameter – Figure 5: Transfer characteristics has been updated – Added device in TO-220 Changes Doc ID 14079 Rev 3 15/16 STD60N3LH5, STP60N3LH5, STU60N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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