STU70N2LH5

STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω 48 A - DPAK - IPAK , STripFET™ V Power MOSFET Preliminary Data Features Type STD70N2LH5 STU70N2LH5 ■ ■ ■ ■ ■ VDSS 25 V 25 V RDS(on) max 0.0071 Ω 0.0075 Ω ID 48 A 48 A 3 3 2 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Marking 70N2LH5 70N2LH5 Package DPAK IPAK Packaging Tape & reel Tube Order codes STD70N2LH5 STU70N2LH5 September 2008 Rev 2 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STD70N2LH5 - STU70N2LH5 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) ID IDM (2) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 25 ± 22 48 43 192 60 0.4 TBD -55 to 175 Unit V V A A A W W/°C mJ °C EAS (3) Tj Tstg Single pulse avalanche energy Operating junction temperature Storage temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V Table 3. Symbol Rthj-case Rthj-amb Tj Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose Value 2.5 100 275 Unit °C/W °C/W °C 2/12 STD70N2LH5 - STU70N2LH5 Electrical characteristics 2 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) Static Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 µA, VGS= 0 VDS = 25 V VDS = 25 V, TC = 125 °C VGS = ± 22 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 24 A SMD version VGS= 10 V, ID= 24 A VGS= 5 V, ID= 24 A SMD version VGS= 5 V, ID= 24 A 1 0.006 0.0071 Min. 25 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω RDS(on) Static drain-source on resistance 0.0064 0.0075 0.008 0.01 0.0084 0.0104 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Test conditions VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 48 A VGS =5 V (Figure 3) VDD=15 V, ID = 48 A VGS =5 V (Figure 8) f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain TBD nC Min Typ. 1300 300 50 8 TBD TBD TBD Max. Unit pF pF pF nC nC nC nC RG Gate input resistance 1.1 Ω 3/12 Electrical characteristics STD70N2LH5 - STU70N2LH5 Table 6. Symbol td(on) tr td(off) tf Switching on/off (resistive load) Parameter Turn-on delay time Rise time Test conditions VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) Min. Typ. TBD TBD Max. Unit ns ns Turn-off delay time Fall time TBD TBD ns ns Table 7. Symbol ISD ISDM VSD trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed)(1) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=24 A, VGS=0 ISD=48 A, di/dt =100 A/µs, VDD=20 V, Tj = 25 °C (Figure 4) TBD TBD TBD Test conditions Min. Typ. Max. 48 192 1.1 Unit A A V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/12 STD70N2LH5 - STU70N2LH5 Test circuit 3 Figure 2. Test circuit Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 5/12 Test circuit Figure 8. Gate charge waveform STD70N2LH5 - STU70N2LH5 6/12 STD70N2LH5 - STU70N2LH5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/12 Package mechanical data STD70N2LH5 - STU70N2LH5 DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 8/12 STD70N2LH5 - STU70N2LH5 Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 9/12 Packaging mechanical data STD70N2LH5 - STU70N2LH5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 10/12 STD70N2LH5 - STU70N2LH5 Revision history 6 Revision history Table 8. Date 16-Jan-2008 23-Sep-2008 Document revision history Revision 1 2 First release VGS value has been changed on Table 2 and Table 5 Changes 11/12 STD70N2LH5 - STU70N2LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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