STD70N2LH5

STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A ) s ( ct 3 3 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses r P e IPAK t e l o Application ■ u d o 1 DPAK 2 1 Switching applications Description ) (s s b O Figure 1. Internal schematic diagram t c u This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. d o r P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STD70N2LH5 70N2LH5 DPAK Tape & reel STU70N2LH5 70N2LH5 IPAK Tube September 2008 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Electrical ratings 1 STD70N2LH5 - STU70N2LH5 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter 25 V ± 22 V Drain-source voltage (VGS=0) VGS Gate-Source voltage ID (1) Drain current (continuous) at TC = 25 °C 48 A ID Drain current (continuous) at TC = 100 °C 43 A IDM (2) Drain current (pulsed) 192 PTOT Total dissipation at TC = 25 °C 60 Single pulse avalanche energy Tj Operating junction temperature Storage temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V Table 3. ) (s e t e ol ) s ( ct A du o r P 0.4 EAS (3) Tstg W W/°C TBD mJ -55 to 175 °C s b O Thermal resistance t c u Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb od Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C e t e ol Tj 2/12 Unit VDS Derating factor s b O Value Pr STD70N2LH5 - STU70N2LH5 2 Electrical characteristics Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown Voltage Min. ID = 250 µA, VGS= 0 IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS= VGS, ID = 250 µA r P e SMD version Static drain-source on resistance let VGS= 10 V, ID= 24 A o s b VGS= 5 V, ID= 24 A SMD version -O VGS= 5 V, ID= 24 A Table 5. Symbol Ciss ) s ( ct Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VGS =5 V Pre Vth gate-to-source charge Post Vth gate-to-source charge VGS =5 V Gate input resistance u d o r P e Coss s b O t e l o Crss Qg Qgs Qgd Qgs1 Qgs2 RG u d o 1 1 10 µA µA ±100 nA ) s ( ct VDS = 25 V, TC = 125 °C VGS= 10 V, ID= 24 A V 0.0071 Ω 0.0064 0.0075 Ω 0.008 Ω 0.006 0.01 0.0084 0.0104 Min Unit V VDS = 25 V Zero gate voltage drain current (VGS = 0) RDS(on) Max. 25 IDSS VGS(th) Typ. Typ. Max. Ω Unit 1300 300 50 pF pF pF (Figure 3) 8 TBD TBD nC nC nC VDD=15 V, ID = 48 A TBD nC (Figure 8) TBD nC f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain 1.1 Ω VDD=15 V, ID = 48 A 3/12 Electrical characteristics Table 6. STD70N2LH5 - STU70N2LH5 Switching on/off (resistive load) Symbol td(on) tr td(off) tf Parameter RG=4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) VDD=10 V, ID= 24 A, Turn-off delay time Fall time RG=4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) Parameter Test conditions Source-drain current (pulsed)(1) VSD Forward on voltage IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ) (s t c u d o r P e s b O 4/12 Max. t e l o ISD=48 A, di/dt =100 A/µs, VDD=20 V, Tj = 25 °C s b O (Figure 4) Unit TBD TBD ns ns TBD TBD ns ns ) s ( ct Typ. u d o r P e ISD=24 A, VGS=0 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% t e l o Min. Source-drain current ISDM Qrr Typ. Source drain diode Symbol trr Min. VDD=10 V, ID= 24 A, Turn-on delay time Rise time Table 7. ISD Test conditions TBD TBD TBD Max. Unit 48 192 A A 1.1 V ns nC A STD70N2LH5 - STU70N2LH5 Test circuit 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit ) s ( ct u d o Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times r P e Unclamped Inductive load test circuit t e l o ) (s s b O t c u d o r P e s b O t e l o Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 5/12 Test circuit Figure 8. STD70N2LH5 - STU70N2LH5 Gate charge waveform ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 6/12 s b O STD70N2LH5 - STU70N2LH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 7/12 Package mechanical data STD70N2LH5 - STU70N2LH5 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 TYP. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 5.1 6.4 6.6 s b O 1 0° 8° ) (s 0.173 0.368 0.039 e t e ol 2.8 0.8 0.2 u d o 0.252 4.6 10.1 0.6 ) s ( ct 0.200 4.7 2.28 4.4 9.35 1 MAX. Pr 0.185 0.090 0.181 0.397 0.110 0.031 0.023 0° 0.260 0.039 0.008 8° t c u d o r P e t e l o s b O 0068772-F 8/12 STD70N2LH5 - STU70N2LH5 Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 ) s ( ct 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 D 6 6.2 0.236 E 6.4 6.6 0.252 G 4.4 4.6 0.173 H 15.9 16.3 0.626 L 9 9.4 0.354 L1 0.8 1.2 L2 0.8 0.023 0.023 u d o r P e t e l o s b O 0.181 0.641 0.370 0.031 1 0.244 0.260 0.047 0.031 0.039 L2 A3 B G = 1 = 2 = 3 = = B2 = E s b O t e l o L D B3 P e A1 d o r B6 C2 t c u B5 A ) (s C H L1 0068771-E 9/12 Packaging mechanical data 5 STD70N2LH5 - STU70N2LH5 Packaging mechanical data DPAK FOOTPRINT ) s ( ct All dimensions are in millimeters u d o r P e TAPE AND REEL SHIPMENT t e l o REEL MECHANICAL DATA DIM. )- s ( t c u d o TAPE MECHANICAL DATA DIM. 10/12 inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 e t e ol s b O Pr mm B1 D 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 s b O mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T MAX. inch MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD70N2LH5 - STU70N2LH5 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 16-Jan-2008 1 First release 23-Sep-2008 2 VGS value has been changed on Table 2 and Table 5 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 11/12 STD70N2LH5 - STU70N2LH5 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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