N-Channel MOSFET
250 V, 25.5 A, 131 mΩ
Features
D
Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A
Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
G
Applications
S
D
TO-263AB
Automotive Engine Control
TO-262AB
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
G
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGS
ID
EAS
PD
Parameter
Gate to Source Voltage
Ratings
250
Units
V
±30
V
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
25.5
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
972
A
mJ
Power Dissipation
417
W
Derate above 25oC
3.3
W/oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
-55 to + 150
oC
0.3
oC/W
43
oC/W
(Note 3)
Package Marking and Ordering Information
Device Marking
FQB27N25TM
Device
FQB27N25TM-F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
FQI27N25TU
FQI27N25TU-F085
TO-262AB
Tube
N/A
50 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 4.67mH, IAS = 20.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum
rating presented here is based on mounting on a 1 in2 pad of 2oz copper.
©2014Semiconductor Components Industries, LLC.
December-2017,Rev. 3
Publication Order Number:
FQB27N25TM-F085/D
FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET
FQB27N25TM-F085/FQI27N25TU-F085
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 250V,
VGS = 0V
250
-
-
V
-
-
1
μA
TJ = 25oC
TJ = 150oC(Note 4)
VGS = ±30V
-
-
250
uA
-
-
±100
nA
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 25.5A,
VGS= 10V
3.0
4.1
5.0
V
-
108
131
mΩ
-
265
310
mΩ
TJ = 25oC
TJ = 150oC(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 125V
ID = 27A
-
1800
-
pF
-
350
-
pF
-
45
-
pF
-
0.82
-
Ω
-
45
49
nC
-
3.3
4
nC
-
12
-
nC
23
-
nC
Switching Characteristics
ton
Turn-On Time
-
-
196
ns
td(on)
Turn-On Delay
-
36
-
ns
tr
Rise Time
td(off)
Turn-Off Delay
-
122
-
ns
-
81
-
ns
tf
toff
Fall Time
-
60
-
ns
Turn-Off Time
-
-
164
ns
VDD = 125V, ID = 27A,
VGS = 10V, RGEN = 25Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse--Recovery Time
Qrr
Reverse--Recovery Charge
ISD = 25.5A, VGS = 0V
-
-
1.5
V
ISD = 12.75A, VGS = 0V
-
-
1.25
V
IF = 27A, dISD/dt = 100A/μs,
VDD=200V
-
205
238
ns
-
1.8
2.3
nC
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
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2
FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET
POWER DISSIPATION MULTIPLIER
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
TC, CASE TEMPERATURE(o C)
150
Figure 1. Normalized Power Dissipation vs. Case
Temperature
10
NORMALIZED THERMAL
IMPEDANCE, ZθJC
DUTY CYCLE - DESCENDING ORDER
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
0.01
1E-3
-5
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 2. Normalized Maximum Transient Thermal Impedance
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3
0
10
1
10
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
CURRENT AS FOLLOWS:
100
150 - TC
I = I2
125
10
SINGLE PULSE
1
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Peak Current Capability
100
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100
100us
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10ms
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
o
TJ = 150 C
TJ = 25oC
TJ = -55oC
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
200
10
2
0.01
Figure 5. Unclamped Inductive Switching
Capability
VDD = 20V
0.1
STARTING TJ = 125oC
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1
10
1
1E-3
1000
Figure 4. Forward Bias Safe Operating Area
100
STARTING TJ = 25oC
100ms
0.1
1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
12
100
VGS = 0 V
TJ = 150 oC
TJ = 25 oC
10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Forward Diode Characteristics
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4
1.6
FQB27N25TM-F085/FQI27N25TU-F085 N-Channel MOSFET
Typical Characteristics
80
60
60
VGS
15V Top
10V
8V
7V
6V Bottom
40
80μs PULSE WIDTH
Tj=150oC
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
80μs PULSE WIDTH
Tj=25oC
20
20
6V
0
0
0
8
12
16
20
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 25.5A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
440
330
TJ = 150oC
TJ = 25oC
220
110
0
5
8
9
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 10. RDSON vs. Gate Voltage
2.8
2.4
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
ID = 25.5A
VGS = 10V
0.8
0.6
-80
0
40
80
120
160
-40
TJ, JUNCTION TEMPERATURE(oC)
200
1.2
VGS = VDS
ID = 250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
4
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Normalized RDSON vs. Junction
Temperature
1.4
1.2
5V
0
Figure 9. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 8. Saturation Characteristics
550
VGS
15V5.5V
Top
10V
8V
7V
6V
5.5V
5V Bottom
40
ID = 1mA
1.1
1.0
1.0
0.8
0.9
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized Gate Threshold Voltage vs.
Temperature
0.8
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
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5
FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET
Typical Characteristics
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
10000
Ciss
1000
Coss
100
Crss
f = 1MHz
VGS = 0V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 14. Capacitance vs. Drain to Source
Voltage
10
ID = 27A
VDD = 100V
VDD = 80V
8
VDD = 120V
6
4
2
0
0
10
20
30
40
Qg, GATE CHARGE(nC)
50
Figure 15. Gate Charge vs. Gate to Source
Voltage
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6
FQB27N25TM-F085/FQI27N25TU- F085 N-Channel MOSFET
Typical Characteristics
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