FQB25N33TM-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Features • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V • Low gate charge (typical 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant Absolute Maximum Ratings Symbol VDSS Drain-Source Voltage ID Drain Current Parameter - Continuous (TC = 25oC) - Continuous (TC = 100oC) IDM Drain Current VGSS Gate -Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR dv/dt - Pulsed (Note 1) V 25 A 16.0 A 100 A V (Note 2) 370 mJ (Note 1) 25 A Repetitive Avalance Energy (Note 1) 37 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 3.1 W Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature TL Units 330 ±30 Power Dissipation (TA = 25oC) * PD Ratings Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 250 W 2.0 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Ratings Parameter Units RθJC Thermal Resistance, Junction to Case 0.5 o RθJA Thermal Resistance, Junction to Ambient * 40 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 o C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Semiconductor Components Industries, LLC. Septemeber-2017, Rev. 1 1 Publication Order Number: FQB25N33TM-F085/D FQB25N33TM-F085 330V N-Channel MOSFET FQB25N33TM-F085 330V N-Channel MOSFET Device Marking Device Package Reel Size FQB25N33 FQB25N33TM-F085 D2-PAK 330mm Tape Width Quantity 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Test Conditions Parameter Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 330 -- -- V -- 0.34 -- V/oC -- -- 1 -- -- 10 ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 330V,VGS = 0V VDS = 264V,TC =125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Forward VGS = -30V, VDS = 0V -- -- -100 nA o µA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Drain to Source On Resistance VGS = 10V, ID = 12.5A, -- 0.18 0.23 Ω gFS Forward Transonductance VDS = 50V, ID = 12.5A, (Note 4) -- 1 -- S VDS = 25V, VGS = 0V, f = 1.0MHz -- 1510 2010 pF -- 290 385 pF -- 40 60 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = 165V, ID = 25A RGS = 25Ω (Note 4, 5) VDS = 297V, ID = 25A, VGS = 15V, (Note 4, 5) -- 20 35 ns -- 100 160 ns -- 90 145 ns -- 70 110 ns -- 58 75 nC -- 11.2 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 100 A VSD Drain-Source Diode Forward Voltage VGS = 0, IS = 25A -- -- 1.5 V trr Reverse Recovery Time -- 275 -- ns Qrr Reverse Recovery Charge VGS = 0, IS = 25A, dIF/dt = 100A/µs -- 3.6 -- µC Notes: 1: Repetitive Rating : Pluse width Limited by maximum junction temperature 2: L = 1.79mH, IAS = 25A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 3: ISD ≤ 25A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25oC 4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5: Essentially independent of operating temperature www.onsemi.com 2 (Note 4) FQB25N33TM-F085 330V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 100 VGS 10 15.0 V 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] ID, Drain Current [A] Top : 1 1 o 150 C o 25 C 1 2. 250µs Pulse Test 0.1 10 2 4 8 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.45 100 IDR, Reverse Drain Current [A] 0.40 VGS = 10V 0.35 0.30 0.25 0.20 VGS = 15V 0.15 10 1 o 150 C 0.1 o 25 C 0.01 1E-3 * Notes : 1. VGS = 0V o * Note : TJ = 25 C 0.10 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] RDS(ON) [Ω ], Drain-Source On-Resistance o -55 C * Notes : 1. VDS = 50V * Notes : 1. 250µs Pulse Test o 2. TC = 25 C 0.1 10 0 10 20 30 40 50 2. 250µs Pulse Test 1E-4 0.0 60 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 VDS = 66V 4000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Capacitances [pF] CAPACITANCE (pF) Crss = Cgd 3000 Ciss 2000 Coss * Note ; 1. VGS = 0 V 1000 Crss 10 1 VDS = 264V 8 6 4 2 2. f = 1 MHz * Note : ID = 25A 0 0 0.1 VDS = 165V 10 0 100 VDS, Drain-Source Voltage [V] www.onsemi.com 3 10 20 30 40 50 QG, Total Gate Charge [nC] 60 70 FQB25N33TM-F085 330V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0 V 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 250 µA 0.8 -100 -50 0 50 100 2. ID = 12.5 A 150 0.0 -100 200 -50 50 100 150 200 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 500 30 25 100 100 µs ID, DRAIN CURRENT (A) ID, Drain Current [A] 0 o o TJ, Junction Temperature [ C] 1ms 10 10ms DC Operation in This Area is Limited by R DS(on) 1 * Notes : o 1. TC = 25 C 20 15 10 5 o 2. TJ = 150 C 3. Single Pulse 0.1 1 10 100 0 25 1000 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-SourceVoltage[V] Figure 11. Transient Thermal Response Curve Z θJC (t), Thermal Response 2 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 PDM t1 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θJC (t) = 0 .5 0 C /W t2 M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T 1 E -3 1 0 -5 1 0 -4 1 0 -3 t1, S q u a re 1 0 W a v e -2 P u ls e 1 0 C = -1 D u r a t io n www.onsemi.com 4 J M - T P D M 1 0 [s e c ] * Z 0 θ J C (t) 1 0 1 FQB25N33TM-F085 330V N-Channel MOSFET Typical Performance Characteristics (Continued) Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 FQB25N33TM-F085 330V N-Channel MOSFET Gate Charge Test Circuit & Waveform www.onsemi.com 6 FQB25N33TM-F085 330V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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