FQB34P10TM-F085P

FQB34P10TM-F085 100V P-Channel MOSFET FQB34P10TM-F085 100V P-Channel MOSFET Features General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • • • -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V Low gate charge ( typical 85 nC) Low Crss ( typical 170 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant S ! D G! ● ● ▶ ▲ G D2-PAK S FQB Series Absolute Maximum Ratings Symbol VDSS ID ● ! D TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB34P10TM-F085 -100 Units V -33.5 A -23.5 A - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * dv/dt PD - Pulsed -134 A ± 25 V (Note 2) 2200 mJ (Note 1) -33.5 A (Note 1) 15.5 -6.0 3.75 mJ V/ns W 155 1.03 -55 to +175 W W/°C °C 300 °C (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.97 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 1 Publication Order Number: FQB34P10TM-F085/D Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- -0.1 -- V/°C VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 150°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.049 0.06 Ω -- 23 -- S Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -16.75 A gFS Forward Transconductance VDS = -40 V, ID = -16.75 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2240 2910 pF -- 730 950 pF -- 170 220 pF ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -33.5 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -33.5 A, VGS = -10 V (Note 4, 5) -- 25 60 -- 250 510 ns -- 160 330 ns -- 210 430 ns -- 85 110 nC -- 15 -- nC -- 45 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A ISM -- -- -134 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -33.5 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -33.5 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L =3.9mH, IAS = -33.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -33.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.onsemi.com 2 (Note 4) -- 160 -- ns -- 0.88 -- µC FQB34P10TM-F085 100V P-Channel MOSFET Electrical Characteristics 2 -ID , Drain Current [A] -ID , Drain Current [A] 10 175℃ 1 10 25℃ 0 10 -55℃ ※ Notes : 1. VDS = -40V 2. 250µ s Pulse Test -1 10 2 4 -VDS , Drain-Source Voltage [V] 6 10 8 -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 RDS(on) [Ω], Drain-Source On-Resistance -IDR , Reverse Drain Current [A] 10 1 10 0 10 25℃ 175℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test -1 10 0.0 0.5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 5000 Coss 4500 Ciss 2.0 2.5 3.0 12 VDS = -20V 10 4000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 3500 3000 Crss 2500 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2000 1500 1000 -VGS, Gate-Source Voltage [V] Capacitances [pF] 5500 1.0 -VSD , Source-Drain Voltage [V] -ID , Drain Current [A] VDS = -50V VDS = -80V 8 6 4 2 ※ Note : ID = -33.5 A 500 0 -1 10 0 10 1 10 0 0 20 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 40 60 80 100 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQB34P10TM-F085 100V P-Channel MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -16.75 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 40 Operation in This Area is Limited by R DS(on) 35 2 100 µs -ID, Drain Current [A] -ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC 0 10 ※ Notes : 30 25 20 15 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 5 -1 10 0 10 1 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 ※ N ote s : 1. Z θ J C (t) = 0 .97 ℃ /W M a x. 2. D u ty F a cto r, D = t 1/t 2 3. T JM - T C = P DM * Z θ JC (t) 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 sin g le p u ls e 10 t2 -2 10 -5 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 -1 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a re W a v e P u lse D u ra tio n [se c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 FQB34P10TM-F085 100V P-Channel MOSFET Typical Characteristics FQB34P10TM-F085 100V P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp VDD VDS (t) ID (t) IAS BVDSS www.onsemi.com 5 Time + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt www.onsemi.com 6 VDD FQB34P10TM-F085 100V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com