FSDM1265RBWDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.fairchildsemi.com FSDM1265RB Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operation that consumes less than 1 W at 240VAC and 0.5W load • Precision Fixed Operating Frequency (66kHz) • Internal Start-up Circuit • Improved Pulse by Pulse Current Limiting • Over-Voltage Protection (OVP) • Over-Load Protection (OLP) • Internal Thermal Shutdown Function (TSD) • Auto-Restart Mode • Under Voltage Lock Out (UVLO) with Hysteresis • Low Operating Current (2.5mA) • Built-in Soft Start Application • SMPS (Switch Mode Power Supplies) for LCD monitor and STB • Adapter Description The FSDM1265RB is an integrated Pulse-Width Modulator (PWM) and a SenseFET which is specifically designed for high performance offline SMPS with minimal external components. This device is an integrated high-voltage power switching regulator which combines a rugged avalanche Sense FET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under-voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft-start, and precise current sources that are temperature compensated for loop compensation and self protection circuitry. Compared with discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size, and weight, while simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform which is well suited for cost effective designs of flyback converters. OUTPUT POWER TABLE(4) 230VAC ±15%(3) PRODUCT Adapter(1) Open Frame(2) 85-265VAC Adapter(1) Open Frame(2) FSDM0565RB 60W 70W 50W 60W FSDM0565RBI 60W 70W 50W 60W FSDM07652RB 70W 80W 60W 70W FSDM1265RB 90W 110W 80W 90W Table 1. Maximum Output Power Notes: 1. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient. 2. Maximum practical continuous power in an open- frame design at 50°C ambient. 3. 230 VAC or 100/115 VAC with doubler. 4. The junction Temperature can limit the Maximum output power. Typical Circuit AC IN DC OUT Vstr Drain PWM Vfb Vcc Source Figure 1. Typical Flyback Application FPSTM is a trademark of Fairchild Semiconductor Corporation. ©2005 Fairchild Semiconductor Corporation Rev.1.0.0 FSDM1265RB Internal Block Diagram Vcc Vstr 6 3 N.C 5 Drain 1 Istart 0.38/ 0.49V + Vref 8V/12V Vcc Vcc good Internal Bias Vref OSC Idelay IFB 2.5R PWM S Q R Q FB 4 Soft start R Gate driver LEB VSD 2 GND Vcc S Q R Q Vovp TSD Vcc good Figure 2. Functional Block Diagram of FSDM1265RB 2 VCL FSDM1265RB Pin Definitions Pin Number Pin Name Pin Function Description 1 Drain This pin is the high voltage power Sense FET drain. It is designed to drive the transformer directly. 2 GND This pin is the control ground and the Sense FET source. Vcc This pin is the positive supply voltage input. During startup, the power is supplied by an internal high voltage current source that is connected to the Vstr pin. When Vcc reaches 12V, the internal high voltage current source is disabled and the power is supplied from the auxiliary transformer winding. 4 Vfb This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. Once the pin reaches 6.0V, the overload protection is activated resulting in the shutdown of the FPSTM. 5 N.C 3 6 Vstr This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external capacitor that is connected to the Vcc pin. Once Vcc reaches 12V, the internal current source is disabled. Pin Configuration TO-220F-6L 6.Vstr 5.N.C. 4.Vfb 3.Vcc 2.GND 1.Drain Figure 3. Pin Configuration (Top View) 3 FSDM1265RB Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-source Voltage Vstr Max. Voltage Pulsed Drain Current (Tc=25°C) (1) Continuous Drain Current(Tc=25°C) Symbol Value Unit VDSS 650 V VSTR 650 V IDM 15.9 ADC 5.3 A 3.4 A ID Continuous Drain Current(Tc=100°C) Supply Voltage VCC 20 V Input Voltage Range VFB -0.3 to VCC V Total Power Dissipation (Tc=25°C with Infinite Heat Sink) PD 50 W Operating Junction Temperature Tj Internally limited °C Operating Ambient Temperature TA -25 to +85 °C TSTG -55 to +150 °C ESD Capability, HBM Model (All Pins except for Vstr and Vfb) - 2.0 (GND-Vstr/Vfb=1.5kV) kV ESD Capability, Machine Model (All Pins except for Vstr and Vfb) - 300 (GND-Vstr/Vfb=225V) V Storage Temperature Range Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature Thermal Impedance Parameter Junction-to-Case Thermal Symbol Package Value Unit θJC(1) TO-220F-6L 2.5 °C/W Notes: 1. Infinite cooling condition - Refer to the SEMI G30-88. 4 FSDM1265RB Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit BVDSS VGS = 0V, ID = 250µA 650 - - V VDS = 650V, VGS = 0V - - 500 µA IDSS VDS= 520V VGS = 0V, TC = 125°C - - 500 µA RDS(ON) VGS = 10V, ID = 2.5A - 0.75 0.9 Ω Output capacitance COSS VGS = 0V, VDS = 25V, f = 1MHz - 78 - pF Turn-on delay time TD(ON) - 42 - - 106 - TD(OFF) - 330 - TF - 110 - VFB = 3V 60 66 72 kHz 13V ≤ Vcc ≤ 18V 0 1 3 % -25°C ≤ Ta ≤ 85°C 0 ±5 ±10 % Sense FET SECTION Drain-source breakdown voltage Zero gate voltage drain current Static drain source on resistance Rise time Turn-off delay time Fall time TR VDD= 325V, ID= 5A ns CONTROL SECTION Initial frequency FOSC Voltage stability FSTABLE Temperature stability (1) ∆FOSC Maximum duty cycle DMAX - 77 82 87 % Minimum duty cycle DMIN - - - 0 % Start threshold voltage VSTART VFB=GND 11 12 13 V Stop threshold voltage VSTOP VFB=GND 7 8 9 V Feedback source current IFB VFB=GND 0.7 0.9 1.1 mA Soft-start time TS Vfb=3 - 10 15 ms - 250 - ns Leading edge blanking time - TLEB BURST MODE SECTION Burst mode voltages(1) VBURH Vcc=14V 0.3 0.38 0.46 V VBURL Vcc=14V 0.39 0.49 0.59 V 5 FSDM1265RB Electrical Characteristics (Continued) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit 3.0 3.4 3.8 A 18 19 20 V 130 145 160 °C VFB ≥ 5.5V 5.5 6.0 6.5 V VFB=5V 2.8 3.5 4.2 µA - 2.5 5 mA PROTECTION SECTION Peak current limit (2) IOVER Over voltage protection (OVP) VOVP Thermal shutdown temperature (1) TSD Shutdown feedback voltage VSD Shutdown delay current IDELAY VFB=5V, VCC=14V - TOTAL DEVICE SECTION Operating supply current (3) IOP VFB=GND, VCC=14V IOP(MIN) VFB=GND, VCC=10V IOP(MAX) VFB=GND, VCC=18V Notes: 1. These parameters, although guaranteed at the design level, are not tested in mass production. 2. These parameters indicate the inductor current. 3. This parameter is the current flowing into the control IC. 6 FSDM1265RB Comparison of FS6M12653RTC and FSDM1265RB Function FS6M12653RTC Soft-Start Adjustable soft-start time using an external capacitor Burst Mode Operation FSDM1265RB FSDM1265RB Advantages Typical Internal soft- • Gradually increasing current limit start of 10ms (fixed) during soft-start reduces peak current and voltage component stresses • Eliminates external components used for soft-start in most applications • Reduces or eliminates output overshoot • Built into controller • Built into controller • Improves ight-load efficiency • Output voltage fixed • Reduces no-load consumption • Output voltage drops to about half 7 FSDM1265RB Typical Performance Characteristics 1.2 1.2 1.0 1.0 Operating Frequency (Normalized to 25℃) Operating Current (Normalized to 25℃) (These Characteristic Graphs are Normalized at Ta= 25°C) 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0.0 0.0 -50 -25 0 25 50 75 100 -50 125 1.2 1.2 1.0 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 -50 Ju nc tion Te mperatu re (℃) -25 0 25 50 75 100 125 Junction Temperature(℃) Start Threshold Voltage vs. Temperature Stop Threshold Voltage vs. Temperature 1.2 1.2 1.0 1.0 FB Source Current (Normalized to 25℃) Maximum Duty Cycle (Normalized to 25℃) 0 Operating Freqency vs. Temperature Stop Threshold Voltage (Normalized to 25℃) Start Thershold Voltage (Normalized to 25℃) Operating Current vs. Temperature 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0.0 0.0 -50 -25 0 25 50 75 100 Junction Temperature(℃) Maximum Duty vs. Temperature 8 -25 Ju n ction Temperatu re(℃) Junc tion Temperature(℃) 125 -50 -25 0 25 50 75 100 125 Ju n c tio n T e mp e ra tu re (℃) Feedback Source Current vs. Temperature FSDM1265RB Typical Performance Characteristics (Continued) 1.2 1.2 1.0 1.0 Shutdown Delay Current (Normalized to 25℃) Shutdown FB Voltage (Normalized to 25℃) (These Characteristic Graphs are Normalized at Ta= 25°C) 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0.0 0.0 -50 -25 0 25 50 75 100 -50 125 -25 1.2 1.2 1.0 1.0 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 50 75 100 125 100 0.8 0.6 0.4 0.2 0.0 125 -50 -25 0 Ju n c tion Te mpe ra tu re (℃) 25 50 75 100 125 100 125 Ju n c tion T e mpe ra tu re (℃) Current Limit VS. Temperature Over Voltage Protection vs. Temperature 1.2 1.2 1.0 1.0 Burst Mode Disable Voltage (Normalized to 25℃) Current Limit (Normalized to 25℃) 25 ShutDown Delay Current vs. Temperature Burst Mode Enable Voltage (Normalized to 25℃) Over Voltage Protection (Normalized to 25℃) ShutDown Feedback Voltage vs. Temperature -50 0 Ju n c tion Te mpe ratu re (℃) Ju n c tion T e mpe ra tu re (℃) 0.8 0.6 0.4 0.2 0.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 Ju nc tion Te mpe ratu re (℃) Burst Mode Enable Voltage vs. Temperature 125 -50 -25 0 25 50 75 Ju n c tion T e mpe ratu re (℃) Burst Mode Disable Voltage vs. Temperature 9 FSDM1265RB Typical Performance Characteristics (Continued) (These Characteristic Graphs are Normalized at Ta= 25°C) 1.2 Soft Start Time (Normalized to 25℃) 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 Ju nc tion Te mpe ratu re (℃) Soft-start Time vs. Temperature 10 100 125 FSDM1265RB Functional Description 1. Star-tup: In previous generations of Fairchild Power Switches (FPSTM), the Vcc pin had an external start-up to the DC input voltage line. In the newer switches, the startup resistor is replaced by an internal high voltage current source. At startup, an internal high voltage current source supplies the internal bias and charges the external capacitor (Cvcc) that is connected to the Vcc pin as illustrated in Figure 4. When the Vcc pin reaches 12V, the FSDM1265RB begins switching and the internal high voltage current source is disabled. Then, the FSDM1265RB continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless Vcc goes below the stop voltage of 8V. VDC CVcc Vcc 3 6 2.1 Pulse-by-pulse current limit: Because current mode control is employed, the peak current through the Sense-FET is limited by the inverting input of PWM comparator (Vfb*) as shown in Figure 5. Assuming that the 0.9mA current source flows only through the internal resistor (2.5R +R= 2.8 kΩ), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (Vfb) exceeds 2.5V, the maximum voltage of the cathode of D2 is clamped at this voltage, thus clamping Vfb*. Therefore, the peak value of the current through the Sense FET is limited. 2.2 Leading edge blanking (LEB): When the internal Sense FET is turned on, usually the reverse recovery of the primary-side capacitance and the secondary-side rectifier causes a high current spike through the SenseFET. causes Excessive voltage across the Rsense resistor can lead to incorrect feedback operation in the current mode PWM control. To counter this effect, the FSDM1265RB employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (TLEB) after the SenseFET is turned on. Vstr Vcc Istart Vref 8V/12V Vref Idelay Vcc good 4 H11A817A D2 2.5R + Vfb* KA431 Gate driver R - VSD Figure 4. Internal startup circuit SenseFET OSC D1 CB Internal Bias IFB Vfb Vo OLP Rsense Figure 5. Pulse width modulation (PWM) circuit 2. Feedback Control: FSDM1265RB employs current mode control, as shown in Figure 5. An opto-coupler (such as the H11A817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the Rsense resistor in addition to the offset voltage makes it possible to control the switching duty cycle. When the reference pin voltage of the KA431 exceeds the internal reference voltage of 2.5V, the H11A817A LED current increases, thereby pulling down the feedback voltage and reducing the duty cycle. Typically this happens when the input voltage is increased or the output load is decreased. 3. Protection Circuit: The FSDM1265RB has several self protective functions such as overload protection (OLP), over voltage protection (OVP) and thermal shutdown (TSD). Because these protection circuits are fully integrated into the IC without external components, the reliability can be improved without increasing cost. Once the fault condition occurs, switching is terminated and the SenseFET remains off. This causes Vcc to fall. When Vcc reaches the UVLO stop voltage (8V), the protection is reset and the internal high voltage current source charges the Vcc capacitor via the Vstr pin. When the Vcc reaches the UVLO start voltage (12 V), the FSDM1265RB resumes its normal operation. Thus, the auto-restart alternately enables and disables the switching of the power SenseFET until the fault condition is eliminated (see Figure 6). 11 FSDM1265RB Vds Power on Fault occurs VFB Fault removed Over load protection 6.0V 2.5V Vcc T 12= Cfb*(6.0-2.5)/Idelay T1 12V T2 t Figure 7. Over Load Protection 8V t Normal operation Fault situation Normal operation Figure 6. Auto Restart Operation 3.1 Over Load Protection (OLP): Overload occurs when the load current exceeds a pre-set level due to an unexpected event. The protection circuit (OLP) is activated to protect the SMPS. However, even when the SMPS is operating normally, the OLP circuit can become activate during the load transition. To avoid this undesired operation, the OLP circuit is designed to become activate after a specified time to determine whether it is in a transient or an overload mode. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited, and therefore the maximum input power is restricted with a given input voltage. If the output consumes beyond this maximum power, the output voltage (Vo) decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (Vfb). If Vfb exceeds 2.5V, D1 is blocked and the 3.5uA current source slowly starts to charge CB up to Vcc. In this condition, Vfb continues increasing until it reaches 6V. Then the switching operation terminates as shown in Figure 7. The delay time for shutdown is the time required to charge CB from 2.5V to 6.0V with 3.5uA. In general, a 10 ~ 50 ms delay is typical for most applications. 3.2 Over voltage Protection (OVP): If the secondary side feedback circuit malfunctions or a solder defect causes an open in the feedback path, the current through the opto-coupler transistor becomes almost zero. Then, Vfb climbs up in a similar manner to the over load situation forcing the pre-set maximum current to be supplied to the SMPS until the OLP is activated. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the OLP is activated, resulting in the breakdown of the devices in the secondary side. In order to prevent this situation, an OVP circuit is used. Generally, Vcc is proportional to the output voltage and the FSDM1265RB uses Vcc instead of directly monitoring the output voltage. If VCC exceeds 19V, an OVP circuit is activated resulting in the termination of the switching operation. In order to avoid undesired activation of OVP during normal operation, Vcc should be designed to be below 19V. 3.3 Thermal Shutdown (TSD): The SenseFET and the control IC are built in one package making it easy for the control IC to detect the heat generated by the SenseFET. When the temperature exceeds approximately 150°C, the thermal shutdown is activated. 4. Soft Start: The FSDM1265RB has an internal soft-start circuit, which increases the PWM comparator and slowly inverts the input voltage together with the SenseFET current, after it starts up. The typical soft-start time is 10ms, The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased to smoothly establish the required output voltage. This also helps prevent transformer saturation and reduce the stress on the secondary diode during startup. 5. Burst operation: To minimize power dissipation in the standby mode, the FSDM1265RB enters burst mode operation. As the load decreases, the feedback voltage decreases. As shown 12 FSDM1265RB in Figure 8, the device automatically enters burst mode when the feedback voltage drops below VBURL(380mV). At this point switching stops and the output voltages start to drop at a rate dependent on the standby current load. This causes the feedback voltage to rise. Once it passes VBURH(490mV), switching resumes. The feedback voltage then falls and the process repeats. Burst mode operation alternately enables and disables switching of the power SenseFET, thereby reducing switching loss in the Standby mode. Vo Vose t VFB 0.49V 0.38V Ids Vds time T 1 Switching disabled T 2 T 3 Switching disabled T 4 Figure 8. Waveforms of BurstOperation 13 FSDM1265RB Typical Application Circuit Application Output Power LCD Monitor 62W Input Voltage Output Voltage (Max. Current) Universal input 5V (4.0A) (85-265Vac) 12V (3.5A) Features • • • • • • High efficiency (>81% at 85Vac input) Low zero-load power consumption (