FW217A-TL-2W

Ordering number : EN8994B FW217A N-Channel Power MOSFET http://onsemi.com 35V, 6A, 39mΩ, Dual SOIC8 Features • • • • On-state resistance RDS(on)1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 35 V ±20 V 6 A A Drain Current (PW≤10s) ID IDP Duty cycle≤1% 6.5 Drain Current (PW≤10μs) IDP Duty cycle≤1% 24 A Allowable Power Dissipation When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 1.8 W Total Dissipation PD PT 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7072-001 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel FW217A-TL-2W 4.9 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 Semiconductor Components Industries, LLC, 2013 July, 2013 0.715 0.22 5 3.9 6.0 8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Packing Type : TL Marking FW217 A LOT No. TL Electrical Connection 8 7 6 5 1 2 3 4 SOIC8 61312 TKIM/31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/7 FW217A Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A 3 RDS(on)1 ID=6A, VGS=10V 30 39 mΩ RDS(on)2 ID=3A, VGS=4.5V 50 70 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 35 V 1.7 1 μA ±10 μA 2.6 V S 470 pF 70 pF Crss 35 pF Turn-ON Delay Time td(on) 8 ns Rise Time tr 34 ns Turn-OFF Delay Time td(off) 31 ns Fall Time tf 30 ns Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs 2 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=6A 2 IS=6A, VGS=0V 0.84 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=6A RL=3Ω VIN D PW=10μs D.C.≤1% VOUT G FW217A P.G 50Ω S Ordering Information Device FW217A-TL-2W Package Shipping memo SOIC8 2,500pcs./reel Pb Free and Halogen Free No.8994-2/7 FW217A ID -- VDS 4.5 V 4.0 V 3.5V 9 8 2 VGS=2.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 3 1 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=3A 6A 60 40 20 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V =6.0A V, I D 40 =10.0 VGS 20 --40 --20 0 20 40 60 80 100 120 160 IT16781 IS -- VSD 10 7 5 140 VGS=0V 3 2 25° 2 C 1.0 7 5 °C -25 = Ta °C 75 1.0 7 5 3 2 --25°C 3 0.1 7 5 3 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 0.01 5 7 10 IT16784 Drain Current, ID -- A 5 0.6 td(on) 7 tr 3 0.8 1.0 1.2 IT16783 Ciss, Coss, Crss -- VDS f=1MHz 7 Ciss, Coss, Crss -- pF tf 5 0.4 Ciss 5 3 10 0.2 1000 td(off) 2 0 Diode Forward Voltage, VSD -- V VDD=20V 7 3 2 100 Coss 7 5 Crss 3 2 2 1.0 0.1 A =3.0 V, I D 5 . 4 = VGS 60 Ambient Temperature, Ta -- °C 5 0.1 0.01 3 80 0 --60 16 VDS=10V 7 5 IT16779 2 RDS(on) -- Ta IT16780 | yfs | -- ID 10 4 Gate-to-Source Voltage, VGS -- V 1 100 Ta=25°C 80 0 IT16778 RDS(on) -- VGS 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 Ta=7 5°C 25°C 0 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 5 2 1 Switching Time, SW Time -- ns 6 --25°C 3.0V 7 Ta=75° C 3 0 VDS=10V 25° C 4 ID -- VGS 10 Drain Current, ID -- A Drain Current, ID -- A 5 6.0V 16.0V 10.0V 6 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT16784 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 35 IT16785 No.8994-3/7 FW217A VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=10V ID=4.5A 7 6 5 4 3 2 1 0 2 4 8 6 Total Gate Charge, Qg -- nC 1.8 1.6 tal To ss di 1.2 1u t on ni ati 1.0 ip Allowable Power Dissipation, PD -- W 2.0 1.4 0.8 0.6 0.4 0.2 0 0 25 50 75 100 ID=6A 1.0 7 5 3 2 0.1 7 5 3 2 Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 2 3 5 7 0.1 125 150 Ambient Temperature, Ta -- °C 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.2 10 0μ 1m s s 10 10 ms 0m s DC 10 s op er ati on Operation in this area is limited by RDS(on). 10 7 5 3 2 IT16786 PD -- Ta 2.4 IDP=24A(PW≤10μs) 0.01 0.01 10 Allowable Power Dissipation(FET1), PD -- W 0 ASO PD (FET1) -- PD (FET2) 2.4 5 7 100 IT16787 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Allowable Power Dissipation(FET2), PD -- W IT16789 2.2 2.4 IT16790 Taping Specification FW217A-TL-2W  3DFNLQJ )RUPDW &DUULHU 7DSH 7\SH % 3DFNLQJ PHWKRG FRQWDLQHG SFV 5HHO ,QQHU ER[ 2XWHU ER[    ,QQHU %2; : 2XWHU %2; :  UHHOV FRQWDLQHG  LQQHU ER[HV FRQWDLQHG 'LPHQVLRQV PPH[WHUQDO 'LPHQVLRQV PPH[WHUQDO ™™ ™™ 2XWHU ER[ ODEHO 5HHO ODEHO,QQHU ER[ ODEHO XQLW PP ,W LV D ODEHO DW WKH WLPH RI IDFWRU\ VKLSPHQWV 7KH IRUP RI D ODEHO PD\ FKDQJH LQ SK\VLFDO GLVWULEXWLRQ SURFHVV   7\SH 1R 37