HN1B01FDW1T1

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating ♦ Human Body Model: 3A ♦ Machine Model: C S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SC−74 CASE 318F STYLE 3 (6) (5) (4) Q1 Q2 (1) (2) (3) MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C) R9 MG G Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc M IC 200 mAdc G Rating Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. R9 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 380 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Package Shipping† HN1B01FDW1T1G SC−74 3,000/Tape & Reel (Pb−Free) SHN1B01FDW1T1G SC−74 3,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 4 Publication Order Number: HN1B01FDW1T1/D HN1B01FDW1T1G, SHN1B01FDW1T1G Q1: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Min Max −50 − −60 − −7.0 − − −0.1 − − − −0.1 −2.0 −1.0 −200 −400 − −0.3 Min Max 50 − 60 − 7.0 − − 0.1 − − − 0.1 2.0 1.0 200 400 − 0.25 Unit Vdc Vdc Vdc mAdc mAdc mAdc mAdc − VCE(sat) Vdc Q2: NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Vdc Vdc Vdc mAdc www.onsemi.com 2 mAdc mAdc mAdc − VCE(sat) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Unit Vdc HN1B01FDW1T1G, SHN1B01FDW1T1G TYPICAL ELECTRICAL CHARACTERISTICS: PNP Transistor 1000 −1.5 mA −2.0 mA −160 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) −200 −1.0 mA −120 −0.5 mA −80 IB = −0.2 mA −40 TA = 100°C 25°C TA = 25°C 0 VCE = −1.0 V 10 0 −1 −2 −3 −4 −5 −6 −1 VCE, COLLECTOR−EMITTER VOLTAGE (V) −25°C 100 VCE = −6.0 V −100 −1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C −10 IC/IB = 10 TA = 100°C 25°C −25°C −0.1 −0.01 −1 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC −10 −10,000 COMMON EMITTER VCE = 6 V −1 TA = 25°C IC/IB = 10 IB, BASE CURRENT (mA) BASE−EMITTER SATURATION VOLTAGE (V) −1000 −1 IC, COLLECTOR CURRENT (mA) −0.1 −1 −100 Figure 2. DC Current Gain 1000 10 −1 −10 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region 25°C −25°C 100 −1000 25°C TA = 100°C −25°C −100 −10 −1 −0.1 −10 −100 −1000 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V) Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage www.onsemi.com 3 −1 HN1B01FDW1T1G, SHN1B01FDW1T1G TYPICAL ELECTRICAL CHARACTERISTICS: NPN Transistor 1000 6.0 mA 5.0 mA 240 2.0 mA 3.0 mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 280 200 1.0 mA 160 120 0.5 mA 80 IB = 0.2 mA TA = 100°C 25°C −25°C 100 40 TA = 25°C 0 0 1 2 3 VCE = 1.0 V 10 4 5 6 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 VCE = 6.0 V VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 8. DC Current Gain 1000 1 1 IC/IB = 10 TA = 100°C 25°C 0.1 −25°C 0.01 10 100 1000 1 10 IC, COLLECTOR CURRENT (mA) 100 1000 IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC 10 10,000 COMMON EMITTER VCE = 6 V IB, BASE CURRENT (mA) BASE−EMITTER SATURATION VOLTAGE (V) 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Voltage 10 100 1 TA = 25°C IC/IB = 10 0.1 TA = 100°C 25°C 1000 −25°C 100 10 1 0.1 1 10 100 1000 0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE, BASE−EMITTER VOLTAGE (V) Figure 11. VBE(sat) versus IC Figure 12. Base−Emitter Voltage www.onsemi.com 4 0.9 1 HN1B01FDW1T1G, SHN1B01FDW1T1G TYPICAL ELECTRICAL CHARACTERISTICS 10 10 NPN 100 ms 10 ms 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) PNP 1 ms Thermal Limit 0.1 0.01 0.001 0.1 Single Pulse Test at TA = 25°C 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Thermal Limit 0.1 0.01 0.001 0.1 100 100 ms 10 ms 1 ms 1 Single Pulse Test at TA = 25°C 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. NPN Safe Operating Area Figure 13. PNP Safe Operating Area www.onsemi.com 5 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative