HUFA76407DK8T-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Dual N-Channel Logic Level UltraFET® Power MOSFET 60 V, 3.5 A, 105 mΩ Features General Description  Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.  Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V  Peak Current vs Pulse Width Curve  UIS Rating Curve  Transient Thermal Impedance Curve vs Board Mounting Area  Switching Time vs RGS Curves  Qualified to AEC Q101  RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter (Note 1) VDRG Drain to Gate Voltage (RGS = 20kΩ) (Note 1) VGS Gate to Source Voltage Drain Current -Continuous (TA = 25 °C, VGS = 5V) V V 3.5 3.8 -Continuous (TA = 100 °C, VGS = 5V) (Note 3) 1 -Continuous (TA = 100 °C, VGS = 4.5V) (Figure 2) (Note 3) IDM Drain Current -Pulsed UIS Pulsed Avalanche Rating PD 60 (Note 2) (Figure 2) Units V ±16 (Note 2) -Continuous (TA = 25 °C, VGS = 10V) ID Ratings 60 A 1 Figure 4 Figures 6, 17, 18 Power Dissipation (Note 2) Derate Above 25 °C 2.5 W 20 mW/°C -55 to +150 °C TJ, TSTG Operating and Storage Junction Temperature Range TL Temperature for Soldering - Leads at 0.063in (1.6mm) from Case for 10s 300 °C Tpkg Temperature for Soldering - Package Body for 10s, See Techbrief TB334 260 °C Tape Width 12mm Quantity 2500 units Package Marking and Ordering Information Device Marking 76407DK8 Notes: Device HUFA76407DK8T-F085 Package SO-8 Reel Size 330mm 1. TJ = 25 °C to 125 °C. 2. 50°C/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1second. 3. 228°C/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds. 4. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. ©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: HUFA76407DK8T-F085/D HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET HUFA76407DK8T-F085 Symbol Parameter Test Conditions Min Typ Max Units 60 - - 55 - - - - 1 - - 250 - ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage (Figure 12) ID = 250 A VGS = 0 V TA = -40 °C(Figure 12) IDSS Zero Gate Voltage Drain Current VDS = 55 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±16 V - VGS = VDS, ID = 250 A (Figure 11) 1 - 3 ID = 3.8 A, VGS = 10 V (Figure 9,10) - 0.075 0.090 TA = 150 °C V A On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Static Drain to Source On Resistance ID = 1.0 A, VGS = 5 V (Figure 9) - 0.088 0.105 ID = 1.0 A, VGS = 4.5 V (Figure 9) - 0.092 0.110  Thermal Characteristics RJA Thermal Resistance Junction to Ambient 0.76in2 (490.3mm2) Pad (Note 2) - - 50 0.027in2 (17.4mm2) Pad (Figure 23) - - 191 0.006in2 (3.87mm2) Pad (Figure 23) - - 228 °C/W Switching Characteristics (VGS=4.5V) ton Turn-On Time - - 57 ns td(on) Turn-On Delay Time - 8 - ns tr Rise Time - 30 - ns td(off) Turn-Off Delay Time - 25 - ns tf Fall Time - 25 - ns toff Turn-Off Time - - 75 ns VDD = 30 V, ID = 1.0 A, VGS = 4.5 V, RGS = 27  (Figure 15, 21, 22) Switching Characteristics (VGS=10V) ton Turn-On Time - - 24 ns td(on) Turn-On Delay Time - 5 - ns tr Rise Time - 11 - ns td(off) Turn-Off Delay Time - 46 - ns tf Fall Time - 31 - ns toff Turn-Off Time - - 116 ns nC VDD = 30 V, ID = 3.8 A, VGS = 10 V, RGS = 30  (Figure 16, 21, 22) Gate Charge Characteristics Qg(TOT) Total Gate Charge VGS = 0 to 10 V Qg(5) Gate Charge at 5V VGS = 0 to 5 V Qg(TH) Threshold Gate Charge VGS = 0 to 1 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 1.0 A, Ig(REF) = 1.0 mA, (Figure 14, 19, 20) - 9.4 11.2 - 5.3 6.4 nC - 0.42 0.5 nC - 1.05 - nC - 2.4 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1MHz, (Figure 13) - 330 - pF - 100 - pF - 18 - pF ISD = 3.8 A - - 1.25 ISD = 1.0 A - - 1.00 - - 48 ns - - 89 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 1.0 A, di/dt = 100 A/s www.onsemi.com 2 V HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Figure 1. NORMALIZED POWER DISSIPATION vs. AMBIENT TEMPERATURE Figure 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs. AMBIENT TEMPERATURE Figure 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE Figure 4. PEAK CURRENT CAPABILITY www.onsemi.com 3 HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Figure 5. FORWARD BIAS SAFE OPERATING AREA Figure 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY Figure 7. TRANSFER CHARACTERISTICS Figure 8. SATURATION CHARACTERISTICS Figure 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT Figure 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE www.onsemi.com 4 HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Figure 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE Figure 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE Figure 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Figure 14. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT Figure 15. SWITCHING TIME vs GATE RESISTANCE Figure 16. SWITCHING TIME vs GATE RESISTANCE www.onsemi.com 5 HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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